LITEON LTE4206 Gaalas t-1 standard 3 infrared emitting diode Datasheet

GaAlAs T-1 Standard 3
Infrared Emitting Diode
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C
Features
Package Dimensions
Selected to specific on-line intensity and radiant intensity ranges.
Low cost plastic end looking package.
Mechanically and spectrally matched to the LTR-4206
series of phototransistor.
The LTE-4206 series are made with Gallium Aluminum
Arsenide window layer on Gallium Arsenide infrared
emitting diodes.
Description
The LTE-4206 series are high intensity Gallium Aluminum
Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-4206 series provides
a broad range of intensity selection. Suffix C-smoke
color lens.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Parameter
Maximum Rating
Unit
90
mW
Power Dissipation
Peak forward Current (300pps, 10
s pulse)
1
A
Continuous Forward Current
60
mA
Reverse Voltage
5
V
Operating Temperature Range
-40
to +85
Storage Temperature Range
-55
to +100
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
260
for 5 Seconds
Electrical Optical Characteristics at Ta=25
Parameter
Symbol
Typ.
Max.
Unit
Test
Condition
*Aperture Radiant Incidence
Ee
0.3
0.7
mW/cm 2
IF=20mA
Radiant Intensity
Ie
2.25
5.26
mW/sr
IF=20mA
Peak Emission Wavelength
Peak
940
nm
IF=20mA
50
nm
IF=20mA
V
IF=20mA
Spectral Line Half-Width
Forward Voltage
VF
Reverse Current
IR
View Angle (See Fig.6)
10-10
Min.
2
1/2
1.2
1.6
100
20
A
VR=5V
deg
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm 2 in perpendicular to and
centered on the mechanical axis of the lens and 26.8mm from lens.
INFRARED
PRODUCTS
Typical Electrical/Optical Characteristic Curves
(25 Ambient Temperature Unless Otherwise Noted)
10-11
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