LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only FEATURES * This specification shall be applied to photocoupler. Model No. LTV-358T as an option. * Current transfer ratio ( CTR : MIN. 80% at IF = 5mA, VCE = 5V ) * Isolation voltage between input and output LTV-358T-V ( Viso = 3,750Vrms ) * High collector-emitter voltage ( VCEO = 120V ) * Employs double transfer mold technology * Subminiature type ( The volume is smaller than that of conventional DIP type by as far as 30% ) * Mini-flat package : 2.0mm profile : LTV-358T-V * UL approved ( No. E113898 ) * CUL approved ( No. E113898 , 01SC19287 ) * CSA approved ( No. 1243207 ) * FIMKO approved ( No. FI-16420 ) * NEMKO approved ( No. P01100403 ) * DEMKO approved ( No. 310475-01 ) * SEMKO approved ( No. 0109173 / 01-08 ) * VDE approved ( No. 094722 ) * RoHS compliance APPLICATIONS * Hybrid substrates that require high density mounting. * Programmable controllers Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 1 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only OUTLINE DIMENSIONS LTV-358T-V : 2.54±0.25 Pin No. and Internal connection diagram Date Code *1 3 4.40±0.2 4 VDE 0884 IDENTIFICATION FACTORY CODE. *2 BIN NO. *3 2 3. Emitter 4. Collector 5.30±0.3 0.10±0.1 2.00±0.2 0.2±0.05 3.85±0.3 1 1. Anode 2. Cathode 0.40±0.1 7.00+0.2 -0.7 *1. 2-digit date code. *2. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). *3. Rank shall be or shall not be marked. Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 2 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Part No. : LTV-358T-V BNS-OD-C131/A4 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) Page : 3 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current IF 50 mA Reverse Voltage VR 6 V Power Dissipation P 70 mW Collector - Emitter Voltage VCEO 120 V Emitter - Collector Voltage VECO 6 V Collector Current IC 50 mA Collector Power Dissipation PC 150 mW Ptot 170 mW Viso 3,750 Vrms Operating Temperature Topr -55 ~ +100 °C Storage Temperature Tstg -55 ~ +150 °C Tsol 260 °C INPUT OUTPUT Total Power Dissipation *1 Isolation Voltage *2 Soldering Temperature *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 4 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER CONDITIONS Forward Voltage VF — 1.2 1.4 V IF=20mA Reverse Current IR — — 10 µA VR=4V Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz Collector Dark Current ICEO — — 100 nA VCE=40V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 120 — — V IC=0.1mA IF=0 Emitter-Collector Breakdown Voltage BVECO 6 — — V IE=10µA IF=0 IC 4 — 20 mA CTR 80 — 400 % IC 0.2 — — mA *1 Current Transfer Ratio CTR 20 — — % Collector-Emitter Saturation Voltage VCE(sat) — — 0.2 V IF=20mA IC=1mA Isolation Resistance Riso — Ω DC500V 40 ~ 60% R.H. Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz Response Time (Rise) tr — 4 18 µs Response Time (Fall) tf — 3 18 µs INPUT OUTPUT Collector Current *1 Current Transfer Ratio Collector Current TRANSFER CHARACTERISTICS *1 CTR = SYMBOL MIN. TYP. MAX. UNIT 5×1010 1×1011 IF=5mA VCE=5V IF=1mA VCE=5V VCE=2V, IC=2mA RL=100Ω IC × 100% IF Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 5 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only RANK TABLE OF CURRENT TRANSFER RATIO CTR MODEL NO. RANK MARK CTR ( % ) CTR ( % ) A 80 ~ 160 >20 B 130 ~ 260 >45 C 200 ~ 400 >70 A or B or C or No Rank 80 ~ 400 >20 LTV-358T-V CONDITIONS Part No. : LTV-358T-V BNS-OD-C131/A4 IF = 5 mA VCE = 5 V Ta = 25 °C IF = 1 mA VCE = 5 V Ta = 25 °C Page : 6 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only ISOLATION SPECIFICATION ACCORDING TO VDE 0884 Parameter Symbol Conditions Rating Unit 30/100/21 - 2 - - 565 VPEAK tp=60s, qc<5pC 848 VPEAK tp=1s, qc<5pC 1059 VPEAK tINI = 10s 6000 VPEAK Class of environmental test - DIN IEC68 Pollution - DIN VDE0110 Maximum Operating Isolation Voltage Partial Discharge Diagram 1 Test Voltage (Between Input and Diagram 2 Output) Maximum Over-voltage VIORM Vpr VINITIAL Remark Refer to the Diagram 1, 2 Safety Maximum Ratings o 1) Case Temperature Tsi IF = 0, Pc = 0 150 2) Input Current Isi Pc=0 200 mA 3) Electric Power (Output or Total Power Issipation) Psi - 300 mW Isolation Resistance (Test Voltage Between Input and Output : DC500V) RISO Ta=Tsi MIN.109 Ta=Topr(MAX.) MIN.1011 Ta=25 oC MIN.1012 C Refer to the Figure 1, 3 Ω Precautions in performing isolation test * Partial discharge test methods shall be the ones according to the specifications of VDE 0884:1992-06 * Please don't carry out isolation test (Viso) over VINITIAL ,This product deteriorates isolation characteristics by partial discharge due to applying high voltage (ex. VINITIAL ). And there is possibility that this product occurs partial discharge in operating isolation voltage (VIORM) Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 7 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only PARTIAL DISCHARGE TEST METHOD Method (A) for type testing and random testing. V VINTIAL Vpr VIORM tp tb t3 t1 tini t2 t4 t1, t2 = 1 to 10s t3, t4 = 1s tp (Partial Discharge Measuring Time)= 60s tb = 62s tini = 10s t Method (B) for routine testing. V Vpr VIORM t3 tp tb t4 t3, t4 = 0.1s tp (Partial Discharge Measuring Time)= 1s tb = 1.2s t The partial discharge level shall not exceed 5 pC during the partial discharge measuring time interval tp under the test conditions shown above. Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 8 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forword Current vs. Ambient Temperatute Fig.2 Collector Power Dissiption vs. Ambient Temperature Collector Power dissipation Pc (mW) 60 Forward current I F (mA) 50 40 30 20 10 0 -55 0 25 50 75 100 125 200 150 100 50 0 -55 o 7mA 100 125 o 4 3 2 1 Ta= 75 C 50 C o 200 o 25 C 0C -25 C o 100 o 50 20 10 5 2 1 0 5 10 15 0 0.5 1.0 1.5 2.0 2.5 3.0 Forward voltage VF (V) Forward current I F (mA) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 200 50 VCE= 5V Ta= 25 C 180 I F= 30mA 160 140 120 100 80 60 40 o Ta= 25 C 25mA o Collector current Ic (mA) Current transfer ratio CTR (%) 75 500 O Ta= 25 C 0 40 20mA 30 15mA Pc(MAX.) 20 10mA 10 5mA 20 0 0 1 2 5 10 20 Forward current I F (mA) Part No. : LTV-358T-V BNS-OD-C131/A4 50 Fig.4 Forward Current vs. Forward Voltage Forward current I F (mA) 1mA 3mA 5mA Ic= 0.5mA Collecotr-emitter saturation voltage VCE(sat) (V) 5 25 Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 6 0 o Ambient temperature Ta ( C) 50 0 1 2 3 4 5 6 7 8 9 Collector-emitter voltage VCE (V) Page : 9 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature I F= 5mA VCE= 5V 100 50 0.10 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 150 I F= 20mA I C= 1mA 0.08 0.06 0.04 0.02 0 0 20 40 60 80 20 100 40 o Collector dark current ICEO (nA) 100 Fig.10 Response Time vs. Load Resistance 500 VCE= 20V Response time ( s) 1000 100 10 200 100 VCE= 2V I C= 2mA Ta= 25 C o 50 tr 20 10 td tf 5 ts 2 1 0.5 0.2 0.05 1 20 40 60 80 100 o 0.1 0.2 0.5 1 2 5 Test Circuit for Response Time Fig.11 Frequency Response Vcc VCE= 2V I C= 2mA Ta= 25 C o 0 Input RD RL Input Output Output 10% 90% ts td 100 10 RL= 10k 10 Load resistance RL (k ) Ambient temperature Ta ( C) Voltage gain Av (dB) 80 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10000 60 o Ambient temperature Ta ( C) tr tf 1k Test Circuit for Frequency Response Vcc 20 0.5 1 RD 2 5 10 20 50 100 RL Output 500 Frequency f (kHz) Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 10 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only Temperature Profile of Soldering Reflow (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 11 of 12 LITE- O N TECH NO LO G Y CO RP O RATIO N Property of LITE-ON Only Temperature Profile of Soldering Reflow (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1) RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm Part No. : LTV-358T-V BNS-OD-C131/A4 Page : 12 of 12