Lyontek LY62102616 1024k x 16 bit low power cmos sram Datasheet

®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 1.0
Description
Initial Issue
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised VDR
Revised ORDERING INFORMATION in page 11
Correct typo error on the column “UB#”, “LB#” of truth table
for row “Byte Read” “Byte Write” and “Output Disable” at
page 4: “X” revised to be “L”
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Aug.20.2008
May.20.2009
Sep.11.2009
Aug.30.2010
July.08.2013
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 55/70ns
„ Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 10μA (TYP.) LL-version
„ Single 4.5V ~ 5.5V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control :
(i) BYTE# fixed to VCC
LB# controlled DQ0 ~ DQ7
UB# controlled DQ8 ~ DQ15
(ii) BYTE# fixed to VSS
DQ15 used as address pin, while
DQ8~DQ14 pins not used
„ Data retention voltage : 1.5V (MIN.)
„ Green package available
„ Package : 48-pin 12mm x 20mm TSOP-I
The LY62102616 is a 16,777,216-bit low power
CMOS static random access memory organized as
1,048,576 words by 16 bits or 2,097,152 words by 8
bits. It is fabricated using very high performance,
high reliability CMOS technology. Its standby current
is stable within the range of operating temperature.
The LY62102616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62102616 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY62102616
LY62102616(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
Speed
4.5 ~ 5.5V
4.5 ~ 5.5V
55/70ns
55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
10µA(LL)
45/30mA
10µA(LL)
45/30mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0~A19
/A-1~A19
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
CE2
WE#
OE#
LB#
UB#
BYTE#
DECODER
I/O DATA
CIRCUIT
1024Kx16/2048Kx8
MEMORY ARRAY
SYMBOL
DESCRIPTION
A0 - A19
Address Inputs(word mode)
A-1 - A19
Address Inputs(byte mode)
DQ0 – DQ15 Data Inputs/Outputs
COLUMN I/O
CE#, CE2
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
BYTE#
Byte Enable
VCC
Power Supply
VSS
Ground
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
PIN CONFIGURATION
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
CE2
NC
UB#
LB#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
LY62102616
XXXXXXXX
XXXX
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
TSOP-I
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
VT1
VT2
TA
TSTG
PD
IOUT
RATING
-0.5 to 6.5
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
TRUTH TABLE
MODE
Standby
Output
Disable
Read
Write
Byte#
Read
Byte #
Write
Note:
CE#
CE2
BYTE# OE#
H
X
X
L
L
L
L
L
L
L
L
L
X
L
X
H
H
H
H
H
H
H
H
H
X
X
H
H
H
L
H
H
H
H
H
H
L
H
L
H
I/O OPERATION
DQ0-DQ7 DQ8-DQ14 DQ15
High – Z High – Z
High – Z
High – Z
High – Z High – Z
High – Z
High – Z High – Z
High – Z
High – Z High – Z
High – Z
High – Z High – Z
High – Z
High – Z
A-1
DOUT
High – Z High – Z
DOUT
DOUT
High – Z
DOUT
DOUT
DOUT
DIN
High – Z High – Z
DIN
DIN
High – Z
DIN
DIN
DIN
SUPPLY
CURRENT
WE#
LB#
UB#
X
X
X
H
H
H
L
L
L
X
X
X
X
X
X
H
H
H
H
H
H
L
L
L
X
X
H
L
X
L
L
H
L
L
H
L
X
X
H
X
L
L
H
L
L
H
L
L
L
L
H
L
L
Dout
High – Z
A-1
ICC,ICC1
L
X
L
L
L
Din
High – Z
A-1
ICC,ICC1
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
VCC
*1
Input High Voltage
VIH
*2
Input Low Voltage
VIL
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
VCC ≧ VOUT ≧ VSS
ILO
Current
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL
IOL = 2mA
Cycle time = Min.
- 55
CE# = VIL and CE2 = VIH
ICC
II/O = 0mA
- 70
Other
pins at VIL or VIH
Average Operating
Power supply Current
Cycle time = 1µs
CE#≦0.2V and CE2≧VCC-0.2V
ICC1
II/O = 0mA
Other pins at 0.2V or VCC-0.2V
CE# = VIH or CE2 = VIL
ISB
Other pins at VIL or VIH
Standby Power
CE# ≧VCC-0.2V
-LL
Supply Current
ISB1
or CE2≦0.2V
Other pins at 0.2V or VCC-0.2V -LLI
MIN.
4.5
2.4
- 0.2
-1
TYP.
5.0
-
*4
MAX.
5.5
VCC+0.3
0.6
1
UNIT
V
V
V
µA
-1
-
1
µA
2.4
-
-
0.4
V
V
-
45
60
mA
-
30
45
mA
-
8
16
mA
-
0.3
2
mA
-
10
60
µA
-
10
100
µA
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
MAX
6
8
-
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
tBA
tBHZ*
tBLZ*
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
tBW
LY62102616-55
MIN.
MAX.
55
55
55
30
10
5
20
20
10
55
25
10
-
LY62102616-70
MIN.
MAX.
70
70
70
35
10
5
25
25
10
70
30
10
-
UNIT
LY62102616-55
MIN.
MAX.
55
50
50
0
45
0
25
0
5
20
45
-
LY62102616-70
MIN.
MAX.
70
60
60
0
55
0
30
0
5
25
60
-
UNIT
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
CE2
LB#,UB#
tBA
OE#
tOE
tOH
tOHZ
tBHZ
tCHZ
tOLZ
tBLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, CE2 = high, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, CE2 = high, LB# or UB# = low transition; otherwise tAA is the limiting
parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
CE2
tBW
LB#,UB#
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
(4)
tDH
Data Valid
Din
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
tWC
Address
tAW
tWR
CE#
tAS
tCW
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.WE#,CE#, LB#, UB# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain
in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
VCC for Data Retention
VDR
CE#≧VCC - 0.2V or CE2≦0.2V
VCC = 1.5V
-LL
Data Retention Current
IDR
CE# ≧VCC-0.2V or CE2≦0.2V
other pins at 0.2V or VCC-0.2V -LLI
Chip Disable to Data
See Data Retention
tCDR
Retention Time
Waveforms (below)
Recovery Time
tR
tRC* = Read Cycle Time
MIN.
1.5
TYP.
-
MAX.
5.5
UNIT
V
-
8
50
µA
-
8
80
µA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE2
tR
CE2 ≦ 0.2V
VIL
VIL
Low Vcc Data Retention Waveform (3) (LB#, UB# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
LB#,UB#
VIH
tR
LB#,UB# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY62102616
Rev. 1.0
1024K X 16 BIT LOW POWER CMOS SRAM
PACKAGE OUTLINE DIMENSION
48-pin 12mm x 20mm TSOP-I Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY62102616
1024K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
ORDERING INFORMATION
Package Type
Access Time
Power Type
(Speed)(ns)
48-pin 12mm x 20mm
TSOP-I
55
Special Ultra
Low Power
Temperature
Range(℃)
0℃~70℃
-40℃~85℃
70
Special Ultra
Low Power
0℃~70℃
-40℃~85℃
Packing
Type
Tray
LY62102616LL-55LL
Tape Reel
LY62102616LL-55LLT
Tray
LY62102616LL-55LLI
Tape Reel
LY62102616LL-55LLIT
Tray
LY62102616LL-70LL
Tape Reel
LY62102616LL-70LLT
Tray
LY62102616LL-70LLI
Tape Reel
LY62102616LL-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
Lyontek Item No.
®
LY62102616
Rev. 1.0
1024K X 16 BIT LOW POWER CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
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