Lyontek LY62L10248 1024k x 8 bit low power cmos sram Datasheet

®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Description
Initial Issue
Revised ORDERING INFORMATION in page 11
Deleted E grade
Deleted WRITE CYCLE Notes :
1. WE#, CE# must be high or CE2 must be low during all address transitions
in page 7
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Dec.18.2009
Aug.30.2010
Apr.12.2011
Jun.29.2016
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 55/70ns
„ Low power consumption:
Operating current : 30/20mA (TYP.)
Standby current : 5μA (TYP.) LL-version
1.5μA (TYP.) SL-version
„ Single 2.7V ~ 3.6V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data retention voltage : 1.2V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
The LY62L10248 is a 8,388,608-bit low power CMOS
static random access memory organized as
1,048,576 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L10248 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY62L10248 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY62L10248
LY62L10248(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
Speed
2.7 ~ 3.6V
2.7 ~ 3.6V
55/70ns
55/70ns
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0-A19
DECODER
DQ0-DQ7
I/O DATA
CIRCUIT
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Power Dissipation
Standby(ISB1,TYP.)
Operating(Icc,TYP.)
5µA(LL)/1.5µA(SL)
30/20mA
5µA(LL)/1.5µA(SL)
30/20mA
1024Kx8
MEMORY ARRAY
SYMBOL
DESCRIPTION
A0 - A19
Address Inputs
DQ0 – DQ7
Data Inputs/Outputs
CE#, CE2
Chip Enable Inputs
WE#
Write Enable Input
OE#
Output Enable Input
VCC
Power Supply
VSS
Ground
NC
No Connection
COLUMN I/O
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
PIN CONFIGURATION
A
NC
OE#
A0
A1
A2
CE2
B
NC
NC
A3
A4
CE#
NC
C
DQ0
NC
A5
A6
NC
DQ4
D
Vss DQ1 A17
A7
E
Vcc DQ2
NC
A16 DQ6 Vss
F
DQ3
NC
A14
A15
G
NC
NC
A12
A13 WE#
NC
H
A18
A8
A9
A10
A11
A19
1
2
3
4
TFBGA
5
6
DQ5 Vcc
NC
DQ7
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
SYMBOL
VT1
VT2
Operating Temperature
TA
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to VCC+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
CE2
OE#
WE#
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
H = VIH, L = VIL, X = Don't care.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
SUPPLY CURRENT
ISB,ISB1
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
VCC
*1
Input High Voltage
VIH
*2
Input Low Voltage
VIL
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
VCC ≧ VOUT ≧ VSS
ILO
Current
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL
IOL = 2mA
Cycle time = Min.
- 55
CE# = VIL and CE2 = VIH
ICC
II/O = 0mA
- 70
Other pins at VIL or VIH
Average Operating
Power supply Current
Cycle time = 1µs
CE#≦0.2V and CE2≧VCC-0.2V
ICC1
II/O = 0mA
Other pins at 0.2V or VCC-0.2V
CE# = VIH or CE2 = VIL
ISB
Other pins at VIL or VIH
LL
LLI
CE# ≧VCC-0.2V
Standby Power
*5
Supply Current
25℃
SL
or CE2≦0.2V
ISB1
*5
SLI
Other pins at 0.2V
40℃
or VCC-0.2V
SL
SLI
MIN.
2.7
2.2
- 0.2
-1
TYP.
3.0
-
*4
MAX.
3.6
VCC+0.3
0.6
1
UNIT
V
V
V
µA
-1
-
1
µA
2.2
-
2.7
-
0.4
V
V
-
30
40
mA
-
20
30
mA
-
4
8
mA
-
0.15
1
mA
-
5
5
1.5
1.5
1.5
1.5
30
50
5
5
15
20
µA
µA
µA
µA
µA
µA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at VCC = VCC(TYP.) and TA = 25℃
5. This parameter is measured at VCC = 3.0V
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
UNIT
pF
pF
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
LY62L10248-55
MIN.
MAX.
55
55
55
30
10
5
20
20
10
-
LY62L10248-70
MIN.
MAX.
70
70
70
35
10
5
25
25
10
-
UNIT
LY62L10248-55
MIN.
MAX.
55
50
50
0
45
0
25
0
5
20
LY62L10248-70
MIN.
MAX.
70
60
60
0
55
0
30
0
5
25
UNIT
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
CE2
OE#
tOE
tOH
tOHZ
tCHZ
tOLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low., CE2 = high.
3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
WRITE CYCLE 1 (WE# Controlled) (1,2,4,5)
tWC
Address
tAW
CE#
tCW
CE2
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
Din
(4)
tDH
Data Valid
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,4,5)
tWC
Address
tAW
CE#
tAS
tWR
tCW
CE2
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.A write occurs during the overlap of a low CE#, high CE2, low WE#.
2.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed
on the bus.
3.During this period, I/O pins are in the output state, and input signals must not be applied.
4.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high
impedance state.
5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
VCC for Data Retention
VDR
1.2
CE# ≧ VCC - 0.2V or CE2≦0.2V
LL
LLI
VCC = 1.2V
SL 25℃
Data Retention Current
IDR
CE# ≧VCC-0.2V or CE2≦0.2V
SLI 40℃
Other pins at 0.2V or VCC-0.2V
SL
SLI
See Data Retention
Chip Disable to Data
0
tCDR
Waveforms (below)
Retention Time
Recovery Time
tR
tRC*
tRC* = Read Cycle Time
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 1.2V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR ≧ 1.2V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE2
tR
CE2 ≦ 0.2V
VIL
VIL
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
TYP.
2
2
1
1
1
1
MAX.
3.6
25
40
3
3
15
20
UNIT
V
µA
µA
µA
µA
µA
µA
-
-
ns
-
-
ns
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
PACKAGE OUTLINE DIMENSION
44-pin 400mil TSOP-II Package Outline Dimension
SYMBOLS
A
A1
A2
b
c
D
E
E1
e
L
ZD
y
Θ
DIMENSIONS IN MILLMETERS
MIN.
NOM.
MAX.
1.20
0.05
0.10
0.15
0.95
1.00
1.05
0.30
0.45
0.12
0.21
18.212
18.415
18.618
11.506
11.760
12.014
9.957
10.160
10.363
0.800
0.40
0.50
0.60
0.805
0.076
o
o
o
3
6
0
DIMENSIONS IN MILS
MIN.
NOM.
MAX.
47.2
2.0
3.9
5.9
37.4
39.4
41.3
11.8
17.7
4.7
8.3
717
725
733
453
463
473
392
400
408
31.5
15.7
19.7
23.6
31.7
3
o
o
o
0
3
6
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY62L10248
Rev. 1.3
1024K X 8 BIT LOW POWER CMOS SRAM
48-ball 6mm × 8mm TFBGA Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
ORDERING INFORMATION
Package Type
Access Time
Power Type
Temperature
(Speed)(ns)
44Pin(400mil) TSOP-II 55
Range(℃)
Special Ultra Low 0℃~70℃
Power
-40℃~85℃
Ultra Low Power
0℃~70℃
-40℃~85℃
70
Special Ultra Low 0℃~70℃
Power
-40℃~85℃
Ultra Low Power
0℃~70℃
-40℃~85℃
Packing
Type
Tray
LY62L10248ML-55SL
Tape Reel
LY62L10248ML-55SLT
Tray
LY62L10248ML-55SLI
Tape Reel
LY62L10248ML-55SLIT
Tray
LY62L10248ML-55LL
Tape Reel
LY62L10248ML-55LLT
Tray
LY62L10248ML-55LLI
Tape Reel
LY62L10248ML-55LLIT
Tray
LY62L10248ML-70SL
Tape Reel
LY62L10248ML-70SLT
Tray
LY62L10248ML-70SLI
Tape Reel
LY62L10248ML-70SLIT
Tray
LY62L10248ML-70LL
Tape Reel
LY62L10248ML-70LLT
Tray
LY62L10248ML-70LLI
Tape Reel
LY62L10248ML-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
Lyontek Item No.
®
LY62L10248
1024K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.3
ORDERING INFORMATION
Package Type
Access Time
Power Type
Temperature
Packing
Range(℃)
Type
(Speed)(ns)
48-ball (6mmx8mm)
TFBGA
55
Tray
LY62L10248GL-55SL
Tape Reel
LY62L10248GL-55SLT
-40℃~85℃
Tray
LY62L10248GL-55SLI
Tape Reel
LY62L10248GL-55SLIT
0℃~70℃
Tray
LY62L10248GL-55LL
Tape Reel
LY62L10248GL-55LLT
Special Ultra Low 0℃~70℃
Power
Ultra Low Power
-40℃~85℃
70
Special Ultra Low 0℃~70℃
Power
Ultra Low Power
Lyontek Item No.
Tray
LY62L10248GL-55LLI
Tape Reel
LY62L10248GL-55LLIT
Tray
LY62L10248GL-70SL
Tape Reel
LY62L10248GL-70SLT
-40℃~85℃
Tray
LY62L10248GL-70SLI
Tape Reel
LY62L10248GL-70SLIT
0℃~70℃
Tray
LY62L10248GL-70LL
Tape Reel
LY62L10248GL-70LLT
-40℃~85℃
Tray
LY62L10248GL-70LLI
Tape Reel
LY62L10248GL-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
®
LY62L10248
Rev. 1.3
1024K X 8 BIT LOW POWER CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
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