Samsung M366S1654ETS-C7A Sdram unbuffered module Datasheet

128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
SDRAM Unbuffered Module
168pin Unbuffered Module based on 256Mb E-die
62/72-bit Non ECC/ECC
Revision 1.4
May 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
Revision History
Revision 1.0 (June, 2003)
- First release
Revision 1.1 (September, 2003)
- Corrected Typo
Revision 1.2 (February, 2004)
- Corrected typo.
Revision 1.3 (March. 2004)
- Modified DC Characteristics Notes.
Revision 1.4 (May, 2004)
- Added Note 5. sentense of tRDL parameter
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
168Pin Unbuffered DIMM based on 256Mb E-die (x8, x16)
Ordering Information
Part Number
Density
Organization
Component Composition
Component
Package
Height
M366S1654ETS-C7A
128MB
16M x 64
16Mx16(K4S561632E) * 4EA
1,000mil
M366S3253ETS-C7A
256MB
32M x 64
32Mx8(K4S560832E) * 8EA
1,375mil
M366S3253ETU-C7A
256MB
32M x 64
32Mx8(K4S560832E) * 8EA
1,125mil
M374S3253ETS-C7A
256MB
32M x 72
32Mx8(K4S560832E) * 9EA
1,375mil
M374S3253ETU-C7A
256MB
32M x 72
32Mx8(K4S560832E) * 9EA
M366S6453ETS-C7A
512MB
64M x 64
32Mx8(K4S560832E)*16EA
1,375mil
M366S6453ETU-C7A
512MB
64M x 64
32Mx8(K4S560832E)*16EA
1,125mil
54-TSOP(II)
1,125mil
M374S6453ETS-C7A
512MB
64M x 72
32Mx8(K4S560832E)*18EA
1,375mil
M374S6453ETU-C7A
512MB
64M x 72
32Mx8(K4S560832E)*18EA
1,125mil
Operating Frequencies
7A
@CL3
@CL2
Maximum Clock Frequency
133MHz(7.5ns)
100MHz(10ns)
CL-tRCD-tRP(clock)
3-3-3
2-2-2
Feature
•
•
•
•
•
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V ± 0.3V power supply
MRS cycle with address key programs Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PIN CONFIGURATIONS (Front side/back side)
Pin
Front
Pin
Front
Pin
Front
Pin
Back
Pin
Back
Pin
Back
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
VSS
DQ0
DQ1
DQ2
DQ3
VDD
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
VDD
DQ14
DQ15
CB0
CB1
VSS
NC
NC
VDD
WE
DQM0
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
DQM1
**CS0
DU
VSS
A0
A2
A4
A6
A8
A10/AP
BA1
VDD
VDD
**CLK0
VSS
DU
**CS2
DQM2
DQM3
DU
VDD
NC
NC
CB2
CB3
VSS
DQ16
DQ17
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
DQ18
DQ19
VDD
DQ20
NC
*VREF
**CKE1
VSS
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
DQ26
DQ27
VDD
DQ28
DQ29
DQ30
DQ31
VSS
**CLK2
NC
NC
SDA
SCL
VDD
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
VSS
DQ32
DQ33
DQ34
DQ35
VDD
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
VDD
DQ46
DQ47
CB4
CB5
VSS
NC
NC
VDD
CAS
DQM4
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
DQM5
**CS1
RAS
VSS
A1
A3
A5
A7
A9
BA0
A11
VDD
**CLK1
A12
VSS
**CKE0
**CS3
DQM6
DQM7
*A13
VDD
NC
NC
CB6
CB7
VSS
DQ48
DQ49
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
DQ50
DQ51
VDD
DQ52
NC
*VREF
REGE
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VDD
DQ60
DQ61
DQ62
DQ63
VSS
**CLK3
NC
SA0
SA1
SA2
VDD
Note : 1. * These pins are not used in this module.
2. Pins 82,83,165,166,167 should be NC in the system which does not support SPD.
3. Pins 21,22,52,53,105,106,136,137are used only ECC(x72) Module.
4. ** About these pins, Refer to the Block Diagram of each.
Pin Description
Pin Name
Function
Pin Name
Function
A0 ~ A12
Address input (Multiplexed)
DQM0 ~ 7
DQM
BA0 ~ BA1
Select bank
VDD
Power supply (3.3V)
DQ0 ~ DQ63
Data input/output
VSS
Ground
CB0 ~ CB7
Check bit (Data-in/data-out)
VREF
Power supply for reference
CLK0 ~ 3
Clock input
REGE
Register enable
CKE0, CKE1
Clock enable input
SDA
Serial data I/O
CS0 ~ CS3
Chip select input
SCL
Serial clock
RAS
Row address strobe
SA0 ~ 2
Address in EEPROM
CAS
Colume address strobe
DU
Don′t use
WE
Write enable
NC
No connection
* SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PIN CONFIGURATION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tss prior to valid command.
A0 ~ A12
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA12
Column address : (x8 : CA0 ~ CA9), (x16 : CA0 ~ CA8)
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 7
Data input/output mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
REGE
Register enable
The device operates in the transparent mode when REGE is low. When REGE is high,
the device operates in the registered mode. In registered mode, the Address and control inputs are latched if CLK is held at a high or low logic level. the inputs are stored in
the latch/flip-flop on the rising edge of CLK. REGE is tied to VDD through 10K ohm
Resistor on PCB. So if REGE of module is floating, this module will be operated as registered mode.
DQ0 ~ 63
Data input/output
Data inputs/outputs are multiplexed on the same pins.
CB0 ~ 7
Check bit
Check bits for ECC.
VDD/VSS
Power supply/ground
Power and ground for the input buffers and the core logic.
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
128MB, 16Mx64 Module (M366S1654ETS) (Populated as 1 bank of x16 SDRAM Module)
FUNCTIONAL BLOCK DIAGRAM
•
CS0
DQM0
DQM4
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM1
CS
LDQM
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U0
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQM5
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U2
UDQM
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
•
CS2
DQM2
DQM6
LDQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM3
CS
LDQM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
U1
UDQM
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQM7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U3
UDQM
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Serial PD
A0 ~ A12, BA0 & 1
SDRAM U0 ~ U3
RAS
SDRAM U0 ~ U3
CAS
SDRAM U0 ~ U3
WE
SDRAM U0 ~ U3
CKE0
SDRAM U0 ~ U3
SCL
47KΩ
SDA
A1
A2
SA0 SA1 SA2
10Ω
CLK0/2
•
•
U0/U2
U1/U3
15pF
10Ω
DQn
WP
A0
Every DQpin of SDRAM
10Ω
VDD
Vss
•
•
CLK1/3
•
•
Two 0.1uF Capacitors
per each SDRAM
To all SDRAMs
10pF
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
256MB,32Mx64 Non ECC Module(M366S3253ETS(U))(Populated as 1 bank of x8 SDRAM Module)
FUNCTIONAL BLOCK DIAGRAM
•
CS0
DQM0
DQM4
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U0
DQM1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U4
DQM5
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U1
DQM CS
DQ0
DQ1
DQ2
U5
DQ3
DQ4
DQ5
DQ6
DQ7
•
CS2
DQM2
DQM6
DQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CS
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
U2
DQM3
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U6
DQM7
DQM
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
U3
A0 ~ A12, BA0 & 1
SDRAM U0 ~ U7
RAS
SDRAM U0 ~ U7
CAS
SDRAM U0 ~ U7
WE
SDRAM U0 ~ U7
CKE0
SDRAM U0 ~ U7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U7
Serial PD
SCL
47KΩ
WP
A0
SDA
A1
A2
SA0 SA1 SA2
•
10Ω
CLK0/2
U4/U6
•
•
VDD
Vss
Every DQpin of SDRAM
•
•
3.3pF*1
•
•
U1/U3
U5/U7
10Ω
DQn
U0/U2
One 0.1uF and one 0.22 uF Cap.
To all SDRAMs
per each SDRAM
10Ω
CLK2/3
10pF
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
256MB, 32Mx72 ECC Module (M374S3253ETS(U)) (Populated as 1 bank of x8 SDRAM Module)
FUNCTIONAL BLOCK DIAGRAM
•
CS0
DQM0
DQM4
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U0
DQM1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U5
DQM5
DQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CS
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U1
CS
DQM6
U2
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM
•
CS2
DQM2
DQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U6
CS
U7
DQM7
CS
DQM
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
U3
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U8
CS
Serial PD
U4
SCL
SDA
WP
A0
47KΩ
A1
A2
SA0 SA1 SA2
•
U0/U3
A0 ~ A12, BA0 & 1
SDRAM U0 ~ U8
RAS
SDRAM U0 ~ U8
CAS
SDRAM U0 ~ U8
•
U6/U8
WE
SDRAM U0 ~ U8
•
U2
CKE0
SDRAM U0 ~ U8
10Ω
CLK0/2
VDD
Vss
•
•
*1 : For 4 loads, CLK2 only.
Every DQpin of SDRAM
10Ω
•
•
U1/U4
3.3pF*1
10Ω
DQn
U5/U7
•
CLK1/3
One 0.1uF and one 0.22 uF Cap.
To all SDRAMs
per each SDRAM
10pF
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
512MB, 64Mx64 Non ECC Module (M366S6453ETS(U)) (Populated as 2 bank of x8 SDRAM Module)
FUNCTIONAL BLOCK DIAGRAM
CS1
CS0
DQM0
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
•
•
DQM4
CS
U0
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U8
•
DQM1
DQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS3
CS2
DQM2
•
DQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM5
CS
U1
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U9
DQM6
U2
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
U10
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM7
CS
U3
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A0 ~ A12, BA0 & 1
SDRAM U0 ~ U15
RAS
SDRAM U0 ~ U15
CAS
SDRAM U0 ~ U15
WE
SDRAM U0 ~ U15
CKE0
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U4
VDD
Vss
•
•
SDRAM U0 ~ U7
DQM CS
DQ1
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U5
U13
•
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
U11
CS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U7
10KΩ
A1
CS
U15
A2
SA0 SA1 SA2
SDRAM U8 ~ U15
10Ω
•
CLK0/1/2/3
U0/U1/U2/U3
U4/U5/U6/U7
•
•
•
To all SDRAMs
U14
SDA
WP
A0
•
Two 0.1uF Capacitors
per each SDRAM
CS
Serial PD
SCL
47KΩ
•
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U6
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VDD
CKE1
DQM
•
DQM
CS
Every DQpin of SDRAM
•
U12
•
10Ω
DQn
CS
DQM CS
DQM
•
DQM3
CS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
•
•
CS
•
DQM
CS
U8/U9/U10/U11
U12/U13/U14/U15
3.3pF
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
512MB, 64Mx72 ECC Module (M374S6453ETS(U)) (Populated as 2 bank of x8 SDRAM Module)
FUNCTIONAL BLOCK DIAGRAM
CS1
CS0
DQM0
DQM4
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U0
•
DQM1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS3
CS2
DQM2
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U1
CS
U2
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U9
•
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM3
•
DQM
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A0 ~ A12, BA0 & 1
CS
U3
CS
U4
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U10
CS
DQM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
SDRAM U0 ~ U17
CAS
SDRAM U0 ~ U17
DQM7
CS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
CKE0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U5
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U6
Vss
•
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U7
•
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U16
DQM
CS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U8
CS
U17
Serial PD
SCL
VDD
WP
A0
47KΩ
•
SDA
A1
A2
SA0 SA1 SA2
10KΩ
•
SDRAM U9 ~ U17
10Ω
CLK0/1/2/3
•
•
CS
•
U1/U3/U0/U4
U6/U7/U5/U8
•
Every DQpin of SDRAM
Two 0.1uF Capacitors
per each SDRAM
U15
•
U10/U12/U9/U13
10Ω
VDD
CS
U13
SDRAM U0 ~ U8
DQn
U14
DQM
CS
CS
CS
SDRAM U0 ~ U17 CKE1
WE
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
U12
DQM
CS
•
DQM
U11
SDRAM U0 ~ U17
RAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CS
•
•
DQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQM
•
DQM
DQM5
DQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
•
•
•
•
U15/U16/U14/U17
•
U2/U11
3.3pF*1
To all SDRAMs
*1 : For 4 loads, CLK2 & CLK3 only.
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.0 * # of component
W
Short circuit current
IOS
50
mA
Storage temperature
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Symbol
Min
Typ
Max
Unit
Supply voltage
Parameter
VDD
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input low voltage
VIL
-0.3
0
0.8
V
2
Output high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output low voltage
VOL
-
-
0.4
V
IOL = 2mA
ILI
-10
-
10
uA
3
Input leakage current
Note
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
Input capacitance (A0 ~ A11)
M366S1654ETS
M366S3253ETS(U)
M366S6453ETS(U)
Unit
Min
Max
Min
Max
Min
Max
CIN1
15
25
25
45
45
85
pF
Input capacitance (RAS, CAS, WE)
CIN2
15
25
25
45
45
85
pF
Input capacitance (CKE)
CIN3
15
25
25
45
25
45
pF
Input capacitance (CLK)
CIN4
10
13
15
21
15
21
pF
Input capacitance (CS)
CIN5
10
15
15
25
15
25
pF
Input capacitance (DQM0 ~ DQM7)
CIN6
8
10
8
12
10
15
pF
Data input/output capacitance (DQ0 ~ DQ63)
COUT
9
12
9
12
13
18
pF
Pin
Symbol
M374S3253ETS(U)
M374S6453ETS(U)
Min
Max
Min
Max
Input capacitance (A0 ~ A11)
CIN1
28
50
50
95
pF
Input capacitance (RAS, CAS, WE)
CIN2
28
50
50
95
pF
Input capacitance (CKE)
CIN3
28
50
28
50
pF
Input capacitance (CLK)
CIN4
18
25
18
25
pF
Unit
Input capacitance (CS)
CIN5
18
30
18
30
pF
Input capacitance (DQM0 ~ DQM7)
CIN6
8
10
13
20
pF
Data input/output capacitance (DQ0 ~ DQ63)
COUT
9
12
13
18
pF
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
DC CHARACTERISTICS
M366S1654ETS (16M x 64,128MB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
Active standby current in
power-down mode
ICC3P
ICC3PS
Active standby current in
non power-down mode
(One bank active)
ICC3N
ICC3NS
Operating current
(Burst mode)
ICC4
Refresh current
Self refresh current
ICC5
ICC6
Test Condition
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
Version
7A
Unit
Note
360
mA
1
8
8
mA
80
mA
40
25
25
mA
100
mA
100
mA
520
mA
1
720
12
mA
mA
2
Version
7A
Unit
Note
640
mA
1
16
16
mA
M366S3253ETS(U) (32M x 64, 256MB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
Active standby current in
power-down mode
ICC3P
ICC3PS
Active standby current in
non power-down mode
(One bank active)
ICC3N
ICC3NS
Operating current
(Burst mode)
ICC4
Refresh current
Self refresh current
ICC5
ICC6
Test Condition
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
160
mA
80
50
50
mA
200
mA
200
mA
800
mA
1
1,440
24
mA
mA
2
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
DC CHARACTERISTICS
M374S3253ETS(U) (32M x 72, 256MB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
Active standby current in
power-down mode
ICC3P
ICC3PS
Active standby current in
non power-down mode
(One bank active)
ICC3N
ICC3NS
Operating current
(Burst mode)
ICC4
Refresh current
Self refresh current
ICC5
ICC6
Test Condition
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
Version
7A
Unit
Note
720
mA
1
18
18
mA
180
mA
90
54
54
mA
225
mA
225
mA
900
mA
1
1,620
27
mA
mA
2
Version
7A
Unit
Note
840
mA
1
32
32
mA
M366S6453ETS(U) (64M x 64, 512MB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
Active standby current in
power-down mode
ICC3P
ICC3PS
Active standby current in
non power-down mode
(One bank active)
ICC3N
ICC3NS
Operating current
(Burst mode)
ICC4
Refresh current
Self refresh current
ICC5
ICC6
Test Condition
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
320
mA
160
96
96
mA
400
mA
400
mA
1,000
mA
1
1,620
48
mA
mA
2
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
DC CHARACTERISTICS
M374S6453ETS(U) (64M x 72, 512MB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
Active standby current in
power-down mode
ICC3P
ICC3PS
Active standby current in
non power-down mode
(One bank active)
ICC3N
ICC3NS
Operating current
(Burst mode)
ICC4
Refresh current
Self refresh current
ICC5
ICC6
Test Condition
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
Version
7A
Unit
Note
945
mA
1
36
36
mA
360
mA
180
108
108
mA
450
mA
450
mA
1,125
mA
1
1,845
54
mA
mA
2
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
Unit
2.4/0.4
V
1.4
V
tr/tf = 1/1
ns
1.4
V
See Fig. 2
3.3V
Vtt = 1.4V
1200Ω
50Ω
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
870Ω
Output
Z0 = 50Ω
50pF
50pF
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
Unit
Note
7A
Row active to row active delay
tRRD(min)
15
ns
1
RAS to CAS delay
tRCD(min)
20
ns
1
tRP(min)
20
ns
1
1
Row precharge time
tRAS(min)
45
ns
tRAS(max)
100
us
Row cycle time
tRC(min)
65
ns
1
Last data in to row precharge
tRDL(min)
2
CLK
2,5
Last data in to Active delay
tDAL(min)
2 CLK + tRP
-
5
Row active time
Last data in to new col. address delay
tCDL(min)
1
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
3
ea
4
Number of valid output data
CAS latency=3
2
CAS latency=2
1
Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
7A
Symbol
Min
CLK cycle
time
CAS latency=3
CLK to valid
output delay
CAS latency=3
Output data
hold time
tCC
CAS latency=2
7.5
Note
1000
ns
1
ns
1,2
ns
2
10
5.4
tSAC
CAS latency=2
CAS latency=3
Unit
Max
6
tOH
CAS latency=2
3
3
CLK high pulse width
tCH
2.5
ns
3
CLK low pulse width
tCL
2.5
ns
3
Input setup time
tSS
1.5
ns
3
Input hold time
tSH
0.8
ns
3
CLK to output in Low-Z
tSLZ
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
tSHZ
5.4
ns
6
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
SIMPLIFIED TRUTH TABLE
Command
Register
Mode register set
Auto refresh
Refresh
(V=Valid, X=Don′t care, H=Logic high, L=Logic low)
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
H
X
L
L
L
L
X
OP code
L
L
L
H
X
X
H
Entry
Self
refresh
H
Bank active & row addr.
H
X
Read &
column address
H
X
Auto precharge disable
Precharge
L
H
H
H
H
X
X
X
L
L
H
H
X
V
L
H
L
H
X
V
X
X
L
H
L
L
H
X
X
L
L
H
H
L
H
L
L
X
Entry
H
L
Exit
L
H
Entry
H
L
Precharge power down mode
Exit
L
V
Column
address
L
X
X
All banks
Clock suspend or
active power down
L
DQM
H
No operation command
H
H
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
H
X
X
X
L
H
H
H
3
3
Column
address
H
H
Bank selection
3
Row address
H
H
Note
1,2
X
Auto precharge enable
Burst stop
A0 ~ A9,
A11, A12
3
Auto precharge enable
Auto precharge disable
A10/AP
L
L
Write &
column address
Exit
H
BA0,1
X
V
L
X
H
4
4,5
4
4,5
6
X
X
X
X
X
X
X
V
X
X
X
7
Notes : 1. OP Code : Operand code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 clock cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 16Mx64 (M366S1654ETS)
Units : Inches (Millimeters)
5.250
(133.350)
5.014
(127.350)
R 0.079
(R 2.000)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
0.350
(8.890)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
1.000
(25.40)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.200 Min
(5.08 Min)
0.100 Max
(2.54 Max)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ±0.006
(0.200 ±0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 16Mx16 SDRAM, TSOPII
SDRAM Part No. : K4S561632E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 32Mx64 (M366S3253ETS)
Units : Inches (Millimeters)
5.250
(133.350)
R 0.079
(R 2.000)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
0.350
(8.890)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
1.375
(34.925)
0.089
(2.26)
5.014
(127.350)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.100 Max
(2.54 Max)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ±0.006
(0.200 ±0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS :32Mx64 (M366S3253ETU)
Units : Inches (Millimeters)
5.250
(133.350)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
0.350
(8.890)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
0.096
(2.44)
R 0.050+0.04
(R 1.27+0.1/-0.0)
R 0.079
(R 2.000)
0.125
(3.18)
1.125
(28.575)
0.374
(9.505)
0.089
(2.26)
5.014
(127.350)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.100 Max
(2.54 Max)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ±0.006
(0.200 ±0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 32Mx72 (M374S3253ETS)
Units : Inches (Millimeters)
5.250
(133.350)
R 0.079
(R 2.000)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
0.350
(8.890)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
1.375
(34.925)
0.089
(2.26)
5.014
(127.350)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.100 Max
(2.54 Max)
0.250
(6.350)
0.123 ± .005
(3.125 ± .125)
0.079 ± .004
(2.000 ± .100)
Detail A
0.123 ± .005
(3.125 ± .125)
0.079 ± .004
(2.000 ± .100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ±0.006
(0.200 ±0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 32Mx72 (M374S3253ETU)
Units : Inches (Millimeters)
5.250
(133.350)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
0.350
(8.890)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
0.096
(2.44)
R 0.050+0.04
(R 1.27+0.1/-0.0)
R 0.079
(R 2.000)
0.125
(3.18)
1.125
(28.575)
0.374
(9.505)
0.089
(2.26)
5.014
(127.350)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.100 Max
(2.54 Max)
0.250
(6.350)
0.123 ± .005
(3.125 ± .125)
0.079 ± .004
(2.000 ± .100)
Detail A
0.123 ± .005
(3.125 ± .125)
0.079 ± .004
(2.000 ± .100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ±0.006
(0.200 ±0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 64Mx64 (M366S6453ETS)
Units : Inches (Millimeters)
5.250
(133.350)
5.014
(127.350)
R 0.079
(R 2.000)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
0.350
(8.890)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
1.375
(34.925)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.150 Max
(3.81 Max)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ± 0.006
(0.200 ± 0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 64Mx64 (M366S6453ETU)
Units : Inches (Millimeters)
5.250
(133.350)
5.014
(127.350)
R 0.079
(R 2.000)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
0.350
(8.890)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
1.125
(28.575)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.150 Max
(3.81 Max)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ± 0.006
(0.200 ± 0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 64Mx72 (M374S6453ETS)
Units : Inches (Millimeters)
5.250
(133.350)
5.014
(127.350)
R 0.079
(R 2.000)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
0.350
(8.890)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
1.375
(34.925)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.150 Max
(3.81 Max)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ±0.006
(0.200 ±0.150)
0.050
(1.270)
Detail C
Tolerances : ± 0.005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
128MB, 256MB, 512MB Unbuffered DIMM
SDRAM
PACKAGE DIMENSIONS : 64Mx72 (M374S6453ETU)
Units : Inches (Millimeters)
5.250
(133.350)
5.014
(127.350)
R 0.079
(R 2.000)
0.157 ± 0.004
(4.000 ± 0.100)
0.700
(17.780)
0.118
(3.000)
0.350
(8.890)
B
A
.118DIA +0.004/-0.000
(3.000DIA +0.100/-0.000)
0.250
(6.350)
0.250
(6.350)
.450
(11.430)
C
0.0984 ±0.008
(2.500 ±0.2)
1.125
(28.575)
0.118
(3.000)
1.450
(36.830)
2.150
(54.61)
4.550
(115.57)
0.165 Min
(4.19 Min)
0.150 Max
(3.81 Max)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
(2.500 ±0.2)
0.250
(6.350)
0.0984 ±0.008
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.008 ±0.006
(0.200 ±0.150)
0.050
(1.270)
Detail C
Tolerances : ± 0.005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOPII
SDRAM Part No. : K4S560832E
Rev. 1.4 May 2004
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