Numonyx M36W0R6050B1 64 mbit (4 mb ã 16, multiple bank, burst) flash memory and 32 mbit (2 mb ã 16) psram, multi-chip package Datasheet

M36W0R6050T1
M36W0R6050B1
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory
and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
Features
■
Multi-Chip Package
– 1 die of 64 Mbit (4 Mb × 16) Flash memory
– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
■
Supply voltage
– VDDF = VDDP = VDDQF = 1.7 V to 1.95 V
■
Low power consumption
■
Electronic signature
– Manufacturer Code: 20h
– Device code (top flash configuration),
M36W0R6050T1: 8810h
– Device code (bottom flash configuration),
M36W0R6050B1: 8811h
■
Package
– ECOPACK®
FBGA
Stacked TFBGA88
(ZA)
■
Block locking
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■
Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
■
Common Flash Interface (CFI)
■
100 000 program/erase cycles per block
Flash memory
■
■
■
■
Programming time
– 8 µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66 MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70 ns
PSRAM
■
Access time: 70 ns
■
Asynchronous Page Read
– Page size: 8 words
– First access within page: 70 ns
– Subsequent read within page: 20 ns
■
Three Power-down modes
– Deep Power-Down
– Partial Array Refresh of 4 Mbits
– Partial Array Refresh of 8 Mbits
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
November 2007
Rev 2
1/22
www.numonyx.com
1
Contents
M36W0R6050T1, M36W0R6050B1
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1
Address inputs (A0-A21) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2
Data inputs/outputs (DQ0-DQ15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3
Flash Chip Enable (EF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4
Flash Output Enable (GF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.5
Flash Write Enable (WF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.6
Flash Write Protect (WPF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.7
Flash Reset (RPF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.8
Flash Latch Enable (LF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.9
Flash Clock (KF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.10
Flash Wait (WAITF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.11
PSRAM Chip Enable (E1P) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.12
PSRAM Chip Enable (E2P) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.13
PSRAM Output Enable (GP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.14
PSRAM Write Enable (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.15
PSRAM Upper Byte Enable (UBP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.16
PSRAM Lower Byte Enable (LBP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.17
VDDF supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.18
VDDP supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.19
VDDQF supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.20
VPPF program supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.21
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5
DC and ac parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/22
M36W0R6050T1, M36W0R6050B1
Contents
7
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3/22
List of tables
M36W0R6050T1, M36W0R6050B1
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
4/22
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Main operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Operating and ac measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Stacked TFBGA88 8 × 10 mm - 8 × 10 ball array, 0.8 mm pitch, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
M36W0R6050T1, M36W0R6050B1
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
TFBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Functional block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Stacked TFBGA88 8 × 10 mm - 8 × 10 active ball array, 0.8 mm pitch, package outline. . 18
5/22
Description
1
M36W0R6050T1, M36W0R6050B1
Description
The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip
Package:
●
a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and
●
a 32-Mbit Pseudo SRAM, the M69KB048BD.
The purpose of this document is to describe how the two memory components operate with
respect to each other. It must be read in conjunction with the M58WR064HT/B and
M69KB048BD datasheets, where all specifications required to operate the Flash memory
and PSRAM components are fully detailed. These datasheets are available from the
Numonyx web site: www.numonyx.com.
Recommended operating conditions do not allow more than one memory to be active at the
same time.
The memory is offered in a Stacked TFBGA88 (8 ×10 mm, 8 × 10 ball array, 0.8 mm pitch)
package. It is supplied with all the bits erased (set to ‘1’).
Figure 1.
Logic diagram
VDDQF
VPPF
VDDF
VDDP
22
16
A0-A21
DQ0-DQ15
EF
GF
WAITF
WF
RPF
WPF
LF
KF
M36W0R6050T1
M36W0R6050B1
E1P
GP
WP
E2P
UBP
LBP
VSS
Ai12035
6/22
M36W0R6050T1, M36W0R6050B1
Table 1.
A0-A21
Description
Signal names
(1)
Address Inputs
DQ0-DQ15
Common Data Inputs/Outputs
VDDF
Flash Memory Power Supply
VDDQF
Flash memory Power Supply for I/O Buffers
VPPF
Common Flash Optional Supply Voltage for Fast Program & Erase
VSS
Ground
VDDP
PSRAM Power Supply
NC
Not Connected Internally
DU
Do Not Use as Internally Connected
Flash memory control functions
LF
Latch Enable input
EF
Chip Enable input
GF
Output Enable input
WF
Write Enable input
RPF
Reset input
WPF
Write Protect input
KF
Burst Clock
WAITF
Wait Data in Burst Mode
PSRAM control functions
E1P
Chip Enable input
GP
Output Enable input
WP
Write Enable input
E2P
Power-down input
UBP
Upper Byte Enable input
LBP
Lower Byte Enable input
1. A21 is an address input for the Flash memory component only.
7/22
Description
Figure 2.
M36W0R6050T1, M36W0R6050B1
TFBGA connections (top view through package)
1
2
3
4
5
A
DU
DU
B
A4
A18
A19
VSS
VDDF
C
A5
LBP
NC
VSS
D
A3
A17
NC
E
A2
A7
F
A1
G
6
7
8
DU
DU
NC
A21
A11
NC
KF
NC
A12
VPPF
WP
EP
A9
A13
NC
WPF
LF
A20
A10
A15
A6
UBP
RPF
WF
A8
A14
A16
A0
DQ8
DQ2
DQ10
DQ5
DQ13
WAITF
NC
H
GP
DQ0
DQ1
DQ3
DQ12
DQ14
DQ7
NC
J
NC
GF
DQ9
DQ11
DQ4
DQ6
DQ15
VDDQF
K
EF
NC
NC
NC
VDDP
NC
VDDQF
E2P
L
VSS
VSS
VDDQF
VDDF
VSS
VSS
VSS
VSS
M
DU
DU
DU
DU
AI12037
8/22
M36W0R6050T1, M36W0R6050B1
2
Signal descriptions
Signal descriptions
See Figure 1: Logic diagram and Table 1: Signal names, for a brief overview of the signals
connected to this device.
2.1
Address inputs (A0-A21)
Addresses A0-A21 are common inputs for the Flash memory and PSRAM components,
whereas A21 is an address input for the Flash memory component only. The Address Inputs
select the cells in the memory array to access during Bus Read operations. During Bus
Write operations they control the commands sent to the Command Interface of the Flash
memory Program/Erase Controller, and they select the cells to access in the PSRAM.
2.2
Data inputs/outputs (DQ0-DQ15)
For the Flash memory, the Data I/O outputs the data stored at the selected address during a
Bus Read operation or inputs a command or the data to be programmed during a Write Bus
operation.
For the PSRAM, the Upper Byte Data Inputs/Outputs carry the data to or from the upper
part of the selected address during a Write or Read operation, when Upper Byte Enable
(UBP) is driven Low.
Likewise, the Lower Byte Data Inputs/Outputs carry the data to or from the lower part of the
selected address during a Write or Read operation, when Lower Byte Enable (LBP) is driven
Low.
2.3
Flash Chip Enable (EF)
The Chip Enable inputs activate the memory control logics, input buffers, decoders and
sense amplifiers. When Chip Enable is Low, VIL, and Reset is High, VIH, the device is in
active mode. When Chip Enable is at VIH the Flash memory is deselected, the outputs are
high impedance and the power consumption is reduced to the standby level.
2.4
Flash Output Enable (GF)
The Output Enable pins control data outputs during Flash memory Bus Read operations.
2.5
Flash Write Enable (WF)
The Write Enable controls the Bus Write operation of the Flash memories’ Command
Interface. The data and address inputs are latched on the rising edge of Chip Enable or
Write Enable whichever occurs first.
9/22
Signal descriptions
2.6
M36W0R6050T1, M36W0R6050B1
Flash Write Protect (WPF)
Write Protect is an input that gives an additional hardware protection for each block. When
Write Protect is Low, VIL, Lock-Down is enabled and the protection status of the LockedDown blocks cannot be changed. When Write Protect is at High, VIH, Lock-Down is disabled
and the Locked-Down blocks can be locked or unlocked. (Refer to Lock Status Table in
M58WR064HT/B datasheet).
2.7
Flash Reset (RPF)
The Reset input provides a hardware reset of the memory. When Reset is at VIL, the
memory is in Reset mode: the outputs are high impedance and the current consumption is
reduced to the Reset Supply Current IDD2. Refer to the M58WR064HT/B datasheet, for the
value of IDD2. After Reset all blocks are in the Locked state and the Configuration Register is
reset. When Reset is at VIH, the device is in normal operation. Exiting Reset mode the
device enters Asynchronous Read mode, but a negative transition of Chip Enable or Latch
Enable is required to ensure valid data outputs.
The Reset pin can be interfaced with 3V logic without any additional circuitry. It can be tied
to VRPH (refer to the M58WR064HT/B datasheet).
2.8
Flash Latch Enable (LF)
Latch Enable latches the address bits on its rising edge. The address latch is transparent
when Latch Enable is Low, VIL, and it is inhibited when Latch Enable is High, VIH. Latch
Enable can be kept Low (also at board level) when the Latch Enable function is not required
or supported.
2.9
Flash Clock (KF)
The Clock input synchronizes the Flash memory to the microcontroller during synchronous
read operations; the address is latched on a Clock edge (rising or falling, according to the
configuration settings) when Latch Enable is at VIL. Clock is don't care during Asynchronous
Read and in write operations.
2.10
Flash Wait (WAITF)
WAIT is a Flash output signal used during Synchronous Read to indicate whether the data
on the output bus are valid. This output is high impedance when Flash Chip Enable is at VIH
or Flash Reset is at VIL. It can be configured to be active during the wait cycle or one clock
cycle in advance. The WAITF signal is not gated by Output Enable.
2.11
PSRAM Chip Enable (E1P)
When asserted (Low), the Chip Enable, E1P, activates the memory state machine, address
buffers and decoders, allowing Read and Write operations to be performed. When deasserted (High), all other pins are ignored, and the device is automatically put in Standby
mode.
10/22
M36W0R6050T1, M36W0R6050B1
2.12
Signal descriptions
PSRAM Chip Enable (E2P)
When de-asserted (Low), the Chip Enable input E2P, puts the device in Power-Down mode.
This is the lowest power mode according to the Configuration Register settings (see
M69KB048BD datasheet).
2.13
PSRAM Output Enable (GP)
The Output Enable, GP, provides a high speed tri-state control, allowing fast read/write
cycles to be achieved with the common I/O data bus.
2.14
PSRAM Write Enable (WP)
The Write Enable, WP, controls the Bus Write operation of the memory’s Command
Interface.
2.15
PSRAM Upper Byte Enable (UBP)
The Upper Byte Enable, UBP, gates the data on the Upper Byte Data Inputs/Outputs (DQ8DQ15) to or from the upper part of the selected address during a Write or Read operation.
2.16
PSRAM Lower Byte Enable (LBP)
The Lower Byte Enable, LBP, gates the data on the Lower Byte Data Inputs/Outputs (DQ0DQ7) to or from the lower part of the selected address during a Write or Read operation.
2.17
VDDF supply voltage
VDDF provides the power supply to the internal core of the Flash memory component. It is
the main power supplies for all Flash memory operations (Read, Program and Erase).
2.18
VDDP supply voltage
The VDDP Supply Voltage supplies the power for all operations (Read or Write) and for
driving the refresh logic, even when the device is not being accessed.
2.19
VDDQF supply voltage
VDDQF provides the power supply for the Flash memory I/O pins. This allows all Outputs to
be powered independently of the Flash memory core power supply, VDDF.
11/22
Signal descriptions
2.20
M36W0R6050T1, M36W0R6050B1
VPPF program supply voltage
VPPF is both a Flash Memory control input and a Flash Memory power supply pin. The two
functions are selected by the voltage range applied to the pin.
If VPPF is kept in a low voltage range (0V to VDDQF) VPPF is seen as a control input. In this
case a voltage lower than VPPLKF gives an absolute protection against Program or Erase,
while VPPF > VPP1F enables these functions (see the M58WR064HT/B datasheet for the
relevant values). VPPF is only sampled at the beginning of a Program or Erase; a change in
its value after the operation has started does not have any effect and Program or Erase
operations continue.
If VPPF is in the range of VPPHF it acts as a power supply pin. In this condition VPPF must be
stable until the Program/Erase algorithm is completed.
2.21
VSS ground
VSS is the common ground reference for all voltage measurements in the Flash memory
(core and I/O Buffers) and PSRAM components.
Note:
12/22
Each Flash memory device in a system should have its supply voltages (VDDF, VDDQF) and
the program supply voltage VPPF decoupled with a 0.1µF ceramic capacitor close to the pin
(high frequency, inherently low inductance capacitors should be as close as possible to the
package). See Figure 5: AC measurement load circuit. The PCB track widths should be
sufficient to carry the required VPPF program and erase currents.
M36W0R6050T1, M36W0R6050B1
3
Functional description
Functional description
The Flash memory and PSRAM components have separate power supplies but share the
same grounds. They are distinguished by three Chip Enable inputs: EF for the Flash
memory and E1P and E2P for the PSRAM.
Recommended operating conditions do not allow more than one device to be active at a
time. The most common example is simultaneous read operations on the Flash memory and
the PSRAM which would result in a data bus contention. Therefore it is recommended to put
the other devices in the high impedance state when reading the selected device.
Figure 3.
Functional block diagram
VDDF
VPPF VDDQF
A21
EF
64 Mbit
Flash
Memory
GF
WF
WAITF
LF
KF
RPF
A0-A20
WPF
DQ0-DQ15
VDDP
E1P
GP
WP
32 Mbit
PSRAM
E2P
UBP
LBP
VSS
AI12.36
13/22
Functional description
Table 2.
M36W0R6050T1, M36W0R6050B1
Main operating modes
Operation
RPF WAITF(4)
EF
GP
WP
LF
Flash Read
VIL
VIL
VIH
VIL(2)
VIH
Flash Write
VIL
VIH
VIL
VIL(2)
VIH
Flash Address
Latch
VIL
X
VIH
VIL
VIH
Flash Data
Out or Hi-Z
Flash Output
Disable
VIL
VIH
VIH
X
VIH
Flash Hi-Z
Flash Standby
VIH
X
X
X
VIH
Hi-Z
X
X
X
X
VIL
Hi-Z
Flash Reset
E1P
E2P
GP
WP
UBP LBP
DQ15-DQ0
Flash Data
Out
Flash Data In
PSRAM must be disabled
(3)
Any PSRAM mode is allowed
Flash Hi-Z
Flash Hi-Z
VIL
VIH
VIL
VIH
VIL
VIL
PSRAM data
out
PSRAM Write
VIL
VIH
VIH
VIL
VIL
VIL
PSRAM data
in
Output Disable
VIL
VIH
VIH
VIH
X
X
PSRAM Hi-Z
VIH
VIH
X
X
X
X
PSRAM Hi-Z
X
VIL
X
X
X
X
PSRAM Hi-Z
PSRAM Read
Flash Memory must be disabled
PSRAM Standby
PSRAM Deep
Power-Down
Any Flash mode is allowed.
1. X = Don't care.
2. LF can be tied to VIH if the valid address has been previously latched.
3. Depends on GF.
4. WAIT signal polarity is configured using the Set Configuration Register command. Refer to M58WR064HT/B datasheet for
details.
14/22
M36W0R6050T1, M36W0R6050B1
4
Maximum rating
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 3.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
Min
Max
Ambient Operating Temperature
–30
85
°C
TBIAS
Temperature Under Bias
–40
125
°C
TSTG
Storage Temperature
–55
125
°C
Input or Output Voltage
–0.5
VDDQF+0.6
V
Flash Memory Core Supply Voltage
–0.2
2.45
V
VDDQF
Input/Output Supply Voltage
–0.2
2.45
V
VDDP
PSRAM Supply Voltage
–0.5
3.6
V
VPPF
Flash Memory Program Voltage
–0.2
14
V
Output Short Circuit Current
100
mA
Time for VPPF at VPPFH
100
hours
TA
VIO
VDDF
IO
tVPPFH
15/22
DC and ac parameters
5
M36W0R6050T1, M36W0R6050B1
DC and ac parameters
This section summarizes the operating measurement conditions, and the dc and ac
characteristics of the device. The parameters in the dc and ac characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 4: Operating and ac measurement conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 4.
Operating and ac measurement conditions
Flash memory
PSRAM
Parameter
Unit
Min
Max
Min
Max
VDDF Supply Voltage
1.7
1.95
–
–
V
VDDP Supply Voltage
–
–
1.7
1.95
V
VDDQF Supply Voltage
1.7
1.95
–
–
V
11.4
12.6
–
–
V
–0.4
VDDQF +0.4
–
–
V
–30
85
–30
85
°C
VPPF Supply Voltage (Factory environment)
VPPF Supply Voltage (Application
environment)
Ambient Operating Temperature
Load Capacitance (CL)
30
Input Rise and Fall Times
5
Input Pulse Voltages
Input and Output Timing Ref. Voltages
Figure 4.
50
ns
0 to VDDQF
0 to VDDP
V
VDDQF/2
VDDP/2
V
AC measurement I/O waveform
VDDQF
VDDQF/2
0V
AI12057
16/22
pF
M36W0R6050T1, M36W0R6050B1
Figure 5.
DC and ac parameters
AC measurement load circuit
VDDQF
VDDF
VDDQF
16.7kΩ
DEVICE
UNDER
TEST
CL
0.1µF
16.7kΩ
0.1µF
CL includes JIG capacitance
AI12058
Table 5.
Symbol
CIN
COUT
Device capacitance
Parameter
Input Capacitance
Output Capacitance
Test condition
Min
Max
Unit
VIN = 0V
12
pF
VOUT = 0V
15
pF
1. Sampled only, not 100% tested.
Please refer to the M58WR064HT/B and M69KB048BD datasheets for further dc and ac
characteristics values and illustrations.
17/22
Package mechanical
6
M36W0R6050T1, M36W0R6050B1
Package mechanical
In order to meet environmental requirements, Numonyx offers the M36W0R6050T1 and
M36W0R6050B1 devices in ECOPACK® packages. These packages have a Lead-free
second-level interconnect. The category of Second-Level Interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner box label.
Figure 6.
Stacked TFBGA88 8 × 10 mm - 8 × 10 active ball array, 0.8 mm pitch,
package outline
D
D1
e
SE
E
E2
E1
b
BALL "A1"
ddd
FE
FE1
FD
SD
A2
A
A1
BGA-Z42
1. Drawing is not to scale.
18/22
M36W0R6050T1, M36W0R6050B1
Table 6.
Package mechanical
Stacked TFBGA88 8 × 10 mm - 8 × 10 ball array, 0.8 mm pitch, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.200
A1
Max
0.0472
0.200
0.0079
A2
0.850
0.0335
b
0.350
0.300
0.400
0.0138
0.0118
0.0157
D
8.000
7.900
8.100
0.3150
0.3110
0.3189
D1
5.600
0.2205
ddd
0.100
9.900
E
10.000
E1
7.200
0.2835
E2
8.800
0.3465
e
0.800
FD
1.200
0.0472
FE
1.400
0.0551
FE1
0.600
0.0236
SD
0.400
0.0157
SE
0.400
0.0157
–
10.100
0.0039
–
0.3937
0.0315
0.3898
0.3976
–
–
19/22
Part numbering
7
M36W0R6050T1, M36W0R6050B1
Part numbering
Table 7.
Ordering information scheme
Example:
M36 W 0 R 6 0 5 0 T 1 ZAQ E
Device Type
M36 = Multiple Memory Product (Multiple Flash + RAM)
Flash 1 Architecture
W = Multiple Bank, Burst mode
Flash 2 Architecture
0 = none present
Operating Voltage
R = VDDF = VDDQF = VDDP = 1.7 V to 1.95 V
Flash 1 Density
6 = 64 Mbit
Flash 2 Density
0 = none present
RAM 1 Density
5 = 32 Mbit
RAM 0 Density
0 = none present
Parameter Blocks Location
T = Top Boot Block Flash
B = Bottom Boot Block Flash
Product Version
1 = 90 nm Flash technology, 70 ns; 0.13 µm RAM, 70 ns speed
Package
ZAQ = Stacked TFBGA88 8 × 10 mm - 8 × 10 active ball array, 0.8 mm pitch
Option
E = ECOPACK® Package, Standard Packing
F = ECOPACK® Package, Tape & Reel Packing
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of
available options (Speed, Package, etc.) or for further information on any aspect of this
device, please contact the Numonyx Sales Office nearest to you.
20/22
M36W0R6050T1, M36W0R6050B1
8
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
06-Dec-2005
0.1
12-Jan-2007
1
Document status promoted to Full Datasheet. Small text
changes.
12-Nov-2007
2
Applied Numonyx branding.
Initial release.
21/22
M36W0R6050T1, M36W0R6050B1
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22/22
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