Mitsubishi M54513P 8-unit 50ma transistor array Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
DESCRIPTION
M54513P and M54513FP are eight-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
Á High breakdown voltage (BV CEO ≥ 40V)
Á Synchronizing current (Ic(max) = 50mA)
Á Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION








INPUT 








IN1→ 1
18 →O1 
IN2→ 2
17 →O2 

IN3→ 3
16 →O3 
IN4→ 4
15 →O4 
IN5→ 5
14 →O5 
IN6→ 6
13 →O6 
IN7→ 7
12 →O7 
IN8→ 8
11 →O8 
GND
10
FUNCTION
The M54513P and M54513FP each have eight circuits consisting of NPN transistors. These ICs have resistance of 2
kΩ at inputs and of 13.6kΩ between the base and emitter.
The GND is used in common in each circuit.
The transistors allow synchronous flow of 50mA collector
current. A maximum of 40V voltage can be applied between
the collector and emitter.
The M54513FP is enclosed in a molded small flat package,
enabling space-saving design.


 OUTPUT




9
Package type 18P4G(P)
NC
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals









INPUT 








1
20
NC
NC : No connection
NC
IN1→ 2
19 →O1 
IN2→ 3
18 →O2 
IN3→ 4
17 →O3 
IN4→ 5
16 →O4 
IN5→ 6
15 →O5 
IN6→ 7
14 →O6 
IN7→ 8
13 →O7 
IN8→ 9
12 →O8 
GND
11




 OUTPUT




10
Package type 20P2N-A(FP)
NC
NC : No connection
CIRCUIT DIAGRAM
OUTPUT
2K
INPUT
13.6K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
V CEO
Parameter
Collector-emitter voltage
Conditions
IC
VI
Collector current
Input voltage
Current per circuit output, L
Pd
Topr
Power dissipation
Operating temperature
Ta = 25°C, when mounted on board
Tstg
Storage temperature
min
Limits
typ
max
0
—
40
V
—
—
30
mA
V
—
VO
IC
Output voltage
Collector current
VIH
“H” input voltage
0
2
VIL
“L” input voltage
0
Symbol
V (BR) CEO
–0.5 ~ +10
V
1.79(P)/1.10(FP)
–20 ~ +75
W
°C
°C
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
ELECTRICAL CHARACTERISTICS
Unit
V
mA
–55 ~ +125
RECOMMENDED OPERATING CONDITIONS
Symbol
Ratings
–0.5 ~ +40
50
Output, H
8
0.2
Unit
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Limits
Test conditions
min
40
Collector-emitter breakdown voltage ICEO = 100µA
typ+
—
max
—
VI = 2V, IC = 10mA
—
25
100
—
—
70
0.85
170
1.7
80
200
—
VCE (sat)
Collector-emitter saturation voltage
II
Input current
VI = 2.5V, I C = 30mA
VI = 2.5V
hFE
DC amplification factor
VCE = 4V, IC = 30mA, Ta = 25°C
Unit
V
mV
mA
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)
Symbol
ton
toff
Parameter
Turn-on time
Turn-off time
Test conditions
min
CL = 15pF (note 1)
Unit
max
—
65
—
ns
—
1200
—
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Limits
typ
VO
Measured device
50%
50%
INPUT
RL
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VP = 2.5VP-P
(2) Output conditions : RL = 300Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
50
2.0
VI = 2V
Collector current Ic (mA)
Power dissipation Pd (W)
M54513P
1.5
M54513FP
1.0
0.5
0
0
25
50
75
20
10
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE (sat) (V)
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
50
VCE = 4V
VCE = 4V
5
Collector current Ic (mA)
DC amplification factor hFE
30
Ambient temperature Ta (°C)
103
7
Ta = 25°C
Ta = 75°C
0
100
Ta = –20°C
40
Ta = 75°C
3
2
Ta = 25°C
102
7
Ta = –20°C
5
3
Ta = –20°C
Ta = 75°C
40
Ta = 25°C
30
20
10
2
101 0
10
2
3
5 7 101
2
5 7 102
3
Collector current Ic (mA)
0
0
0.5
1.0
1.5
2.0
Input voltage VI (V)
Input Characteristics
5
Input current II (mA)
4
Ta = –20°C
3
Ta = 25°C
2
Ta = 75°C
1
0
0
2
4
6
8
10
Input voltage VI (V)
Aug. 1999
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