Mitsubishi M5M51016BRT-10VLL-I 1048576-bit(65536-word by 16-bit)cmos static ram Datasheet

99Jul
Jul,1997
,1997
MITSUBISHI LSIs
M5M51016BTP,RT-10VL-I,
-10VLL-I
1048576-BIT(65536-WORD
1048576-BIT(65536-WORD BY
BY 16-BIT)CMOS
16-BIT)CMOS STATIC
STATIC RAM
RAM
DESCRIPTION
Power supply current
M5M51016BTP,RT-10VL
M5M51016BTP,RT-10VLL
Access time
(max)
Active
(max)
stand-by
(max)
100ns
120µA
(VCC = 3.6V)
100ns
24µA
(VCC = 3.6V)
0.3µA
(VCC = 3.0V,
typ)
12mA
(1MHz)
Single +3.3V power supply
Low stand-by current 0.3µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by CS, BC1 & BC2
Data hold on +2V power supply
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)
APPLICATION
Small capacity memory units
ADDRESS
INPUTS
NC
A12
1
44
NC
2
43
A7
A6
A5
A4
3
42
4
41
5
40
BC1
BC2
A14
A15
6
39
A3
A2
A1
A0
7
38
8
37
9
36
CHIP SELECT
INPUT CS
FEATURES
Type name
PIN CONFIGURATION (TOP VIEW)
(0V)GND
OUTPUT ENABLE
INPUT OE
NC
DQ1
DQ2
DQ3
DATA DQ4
INPUTS/
OUTPUTS DQ5
DQ6
DQ7
DQ8
10
11
12
13
14
M5M51016BTP
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM
organized as 65536 word by 16-bit which are fabricated using
high-performance triple polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery result in a high
density and low power static RAM.
They are low stand-by current and low operation current and ideal
for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small
outline package which is a high reliability and high density surface
mount device (SMD). Two types of devices are available.
M5M51016BTP(normal lead bend type package), M5M51016BRT
(reverse lead bend type package). Using both types of devices, it
becomes very easy to design a printed circuit board.
35
34
33
32
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
BYTE
CONTROL
INPUTS
ADDRESS
INPUTS
A13
WRITE
CONTROL
W
INPUTS
A8
A9
ADDRESS
INPUTS
A11
A10
GND(0V)
NC
DQ16
DQ15
DQ14
DQ13 DATA
INPUTS/
DQ12 OUTPUTS
DQ11
DQ10
DQ9
VCC(5V)
Outline 44P3W - H (400mil TSOP Normal Bend)
44
1
43
2
42
3
41
4
40
5
39
6
38
7
37
8
DATA
INPUTS/
OUTPUTS
36
35
34
33
32
M5M51016BRT
NC
BC1
BC2
A14
ADDRESS
INPUTS A15
A13
WRITE
CONTROL W
INPUTS
A8
ADDRESS A9
INPUTS A11
A10
(0V)GND
NC
DQ16
DQ15
DQ14
BYTE
CONTROL
INPUTS
9
10
11
12
13
31
14
30
15
29
16
DQ13
DQ12
DQ11
DQ10
DQ9
28
17
27
18
26
19
25
20
24
21
(5V)VCC
23
22
NC
A12
A7
A6
A5
ADDRESS
A4
INPUTS
A3
A2
A1
A0
SELECT
CS CHIP
INPUT
GND(0V)
OUTPUT ENABLE
OE INPUT
NC
DQ1
DQ2
DQ3
DQ4 DATA
INPUTS/
DQ5 OUTPUTS
DQ6
DQ7
DQ8
Outline 44P3W - J (400mil TSOP Reverse Bend)
NC : NO CONNECTION
MITSUBISHI
ELECTRIC
1
9 Jul ,1997
MITSUBISHI LSIs
M5M51016BTP,RT-10VL-I,
-10VLL-I
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
FUNCTION
The operation mode of the M5M51016B series are determined by
a combination of the device control inputs BC1, BC 2, CS, W and
OE. Each mode is summarized in the function table.
A write cycle is executed whenever the low level W overlaps with
the low level BC1 and/or BC2 and the high level CS. The address
must be set up before the write cycle and must be stable during
the entire cycle.
The data is latched into a cell on the trailing edge of W, BC1, BC2
or CS, whichever occurs first, requiring the set-up and hold time
relative to these edge to be maintained. The output enable input
OE directly controls the output stage. Setting the OE at a high
level, the output stage is in a high-impedance state, and the
databus contention problem in the write cycle is eliminated.
A read cycle is executed by setting W at a high level and OE at a
low level while BC1 and/or BC2 and CS are in an active state.
(BC1 and/or BC2=L,CS=H)
When setting BC1 at a high level and the other pins are in an
active state, upper-Byte are in a selectable mode in which both
reading and writing are enabled, and lower-Byte are in a
non-selectable mode.And when setting BC2 at a high level and the
other pins are in an active state, lower-Byte are in a selectable
mode and upper -Byte are in a non-selectable mode.
When setting BC1 and BC2 at a high level or CS at a low level,
the chips are in a non-selectable mode in which both reading and
writing are disabled.
In this mode, the output stage is in a high-impedance state,
allowing OR-tie with other chips and memory expansion by BC1,
BC2 and CS. The power supply current is reduced as low as the
stand-by current which is specified as I CC3 or ICC4, and the memory
data can be held at +2V power supply, enabling battery back-up
operation during powerfailure or power-down operation in the
non-selected mode.
DQ1~8 DQ9~16
ICC
CS BC1 BC2 W OE
Mode
L
X X X X Non selection High-Z High-Z Stand-by
X
H H X X Non selection High-Z High-Z Stand-by
Din
Active
H
H L
L
X Upper-Byte Write High-Z
H
H L
H L Upper-Byte Read High-Z
Dout
Active
H
H L
H H
High-Z High-Z Active
H
L
H L
X Lower-Byte Write Din
High-Z Active
H
L
H H L Lower-Byte Read Dout
High-Z Active
L
H H H
High-Z High-Z Active
H
Din
Din
H
L
L
L
X Word Write
Active
H
L
L
H L Word Read Dout
Dout
Active
L
L
H H
High-Z High-Z Active
H
(High-Z=High-impedance)
A13 39
A2 8
COLUMN
DECODER
A4 6
ADDRESS
INPUT
BUFFER
A9 36
A0 10
A5 5
CS 11
BYTE
CONTROL
INPUTS
BC1 43
19 DQ5
20 DQ6
21 DQ7
24 DQ9
25 DQ10
DATA
INPUTS/
OUTPUTS
26 DQ11
27 DQ12
28 DQ13
29 DQ14
30 DQ15
INPUT
DATA
CONTROL
CLOCK
GENERATOR
INPUT
DATA
CONTROL
CHIP SELECT
INPUT
BLOCK
DECODER
A11 35
17 DQ3
18 DQ4
31 DQ16
ADDRESS
INPUT
BUFFER
A10 34
15 DQ1
16 DQ2
22 DQ8
A8 37
ADDRESS
INPUTS
OUTPUT BUFFER
( 1024 ROWS
x 256 COLUMNS
x 4 BLOCKS )
OUTPUT BUFFER
A14 41
A1540
65536 WORDS x16 BITS
SENSE AMP.
A12 2
ROW DECODER
A6 4
A7 3
ADDRESS INPUT
BUFFER
A1 9
A3 7
SENSE AMP.
BLOCK DIAGRAM
BC2 42
WRITE CONTROL W
38
INPUT
OUTPUT ENABLE OE 13
INPUT
23 Vcc
33 GND(0V)
12 GND (0V)
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9 Jul ,1997
MITSUBISHI LSIs
M5M51016BTP,RT-10VL-I,
-10VLL-I
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
VI
VO
Pd
Topr
Tstg
Parameter
Ratings
– 0.3 ~ 4.6
– 0.3* ~ Vcc + 0.3
Conditions
Supply voltage
Input voltage
Output voltage
With respect to GND
0 ~ Vcc
1
– 40 ~ 85
– 65 ~ 150
o
Ta=25 C
Power dissipation
Operating temperature
Storage temperature
Unit
V
V
V
W
C
o
C
o
* –3.0V in case of AC ( Pulse width < 50ns )
DC ELECTRICAL CHARACTERISTICS (Ta= -40 ~85 C, Vcc=3.3V _+ 0.3V, unless otherwise noted)
o
Symbol
Parameter
Test conditions
VIH
VIL
VOH1
VOH2
VOL
II
High-level input voltage
Low-level input voltage
High-level output voltage 1
High-level output voltage 2
Low-level output voltage
Input current
IOH = – 1mA
IOH = – 0.1mA
IOL = 2mA
VI =0 ~ Vcc
IO
Output current in off-state
BC1 and BC2 = VIH or CS = VIL or
OE = VIH, VI/O = 0 ~ Vcc
ICC1W
Word operation (16bit)
Active supply current
(AC,TTL level)
BC1 and BC2 = VIL, CS = VIH
other inputs = VIH or VIL
Output-open(duty 100%)
ICC2B
Byte operation (8bit)
Active supply current
(AC,TTL level)
(BC1 = VIH and BC2 = VIL)
or (BC1 = VIL and BC2 = VIH),
CS = VIH
other inputs = VIH or VIL
Output-open(duty 100%)
ICC3
Stand-by current
ICC2W
ICC1B
ICC4
1) CS < 0.2V, other inputs = 0~Vcc
2) BC1,BC2 > Vcc - 0.2V,
CS > Vcc - 0.2V
other inputs = 0~Vcc
BC1 and BC2 = VIH or CS = VIL,
other inputs = 0~Vcc
Stand-by current
Min
Limits
Typ
Max
Vcc+0.3V
2.0
– 0.3*
2.4
Unit
0.4
_+1
V
V
V
V
V
µA
_+1
µA
Min
cycle
50
mA
1MHz
12
mA
Min
cycle
30
mA
1MHz
10
mA
120
µA
24
µA
1
mA
Max
6
9
8
Unit
0.6
Vcc–0.5V
-VL
-VLL
* –3.0V in case of AC ( Pulse width < 30ns )
CAPACITANCE (Ta= -40 ~ 85 C , Vcc=3.3V _+ 0.3V, unless otherwise noted)
o
Symbol
CI
CIBC
CO
Parameter
Input capacitance ( except BC1,BC2)
Input capacitance ( BC1,BC2 )
Output capacitance
Test conditions
VI=GND, VI=25mVrms, f=1MHz
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Min
Limits
Typ
pF
pF
pF
Note 1: Direction for current flowing into an IC is positive (no mark).
o
2: Typical value is Vcc = 3.3V, Ta = 25 C
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ELECTRIC
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9 Jul ,1997
MITSUBISHI LSIs
M5M51016BTP,RT-10VL-I,
-10VLL-I
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS (Ta = -40 ~ 85 C , VCC = 3.3V _+ 0.3V, unless otherwise noted )
o
(1) MEASUREMENT CONDITIONS
Input pulse level ...................... VIH = 2.2V, VIL = 0.4V
Input rise and fall time .............. 5ns
Reference level ........................ VOH = 1.5V, VOL = 1.5V
Output loads ............................ Fig.1,CL = 30pF
CL = 5pF ( for ten, tdis )
Transition is measured _+ 500mV from steady
state voltage. ( for ten, tdis )
1TTL
DQ
CL ( Including scope
and JIG )
Fig.1 Output load
(2) READ CYCLE
Limits
Symbol
tCR
ta(A)
ta(BC1)
ta(BC2)
ta(CS)
ta(OE)
tdis(BC1)
tdis(BC2)
tdis(CS)
tdis(OE)
ten(BC1)
ten(BC2)
ten(CS)
ten(OE)
tv(A)
M5M51016B
-10VL,-10VLL
Min
Typ
Max
100
100
100
100
100
50
35
35
35
35
10
10
10
5
10
Parameter
Read cycle time
Address access time
Byte control 1 access time
Byte control 2 access time
Chip select access time
Output enable access time
Output disable time after BC1 high
Output disable time after BC2 high
Output disable time after CS low
Output disable time after OE high
Output enable time after BC1 low
Output enable time after BC2 low
Output enable time after CS high
Output enable time after OE low
Data valid time after address
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(3) WRITE CYCLE
Symbol
tCW
tw(W)
tsu(A)
tsu(A-WH)
tsu(BC1)
tsu(BC2 )
tsu(CS)
tsu(D)
th(D)
trec(W)
tdis(W)
tdis(OE)
ten(W)
ten(OE)
Limits
M5M51016B
-10VL,-10VLL
Max
Min
Typ
100
75
0
85
85
85
85
40
0
0
35
35
5
5
Parameter
Write cycle time
Write pulse width
Address set up time
Address set up time with respect to W
Byte control 1 setup time
Byte control 2 setup time
Chip select set up time
Data set up time
Data hold time
Write recovery time
Output disable time from W low
Output disable time from OE high
Output enable time from W high
Output enable time from OE low
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ELECTRIC
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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M5M51016BTP,RT-10VL-I,
-10VLL-I
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
(4) TIMING DIAGRAMS
Read cycle
tCR
A0~15
ta(A)
tv (A)
ta (BC1) or
ta (BC2)
BC1 and/or BC2
(Note 3)
tdis (BC1) or
tdis (BC2)
CS
(Note 3)
ta (CS)
(Note 3)
tdis (CS)
ta (OE)
(Note 3)
ten (OE)
OE
(Note 3)
tdis (OE)
ten (BC1)
ten (BC2)
(Note 3)
ten (CS)
DQ1~16
DATA VALID
W = "H" level
Write cycle (W control mode)
tCW
A0~15
tsu (BC1) or tsu (BC2)
BC1 and/or BC2
(Note 3)
(Note 3)
CS
tsu (CS)
(Note 3)
(Note 3)
tsu (A-WH)
OE
tsu (A)
tw (W)
trec (W)
W
tdis (W)
ten(OE)
ten (W)
tdis (OE)
DQ1~16
DATA IN
STABLE
tsu (D)
th (D)
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M5M51016BTP,RT-10VL-I,
-10VLL-I
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
Write cycle ( BC control mode)
tCW
A0~15
tsu (A)
tsu (BC1) or
tsu (BC2)
trec (W)
BC1 and/or BC2
CS
(Note 3)
(Note 3)
(Note 5)
W
(Note 4)
(Note 3)
(Note 3)
tsu (D)
th (D)
DATA IN
STABLE
DQ1~16
Write cycle (CS control mode)
tCW
A0~15
BC1 and/or BC2
(Note 3)
(Note 3)
tsu (A)
tsu (CS)
trec (W)
CS
(Note 5)
W
(Note 4)
(Note 3)
(Note 3)
tsu (D)
DQ1~16
th (D)
DATA IN
STABLE
Note 3: Hatching indicates the state is "don't care".
4: Writing is executed while CS high overlaps BC1 and/or BC2 low and W low.
5: When the falling edge of W is simultaneously or prior to the falling edge of BC1 and/or BC2 or rising edge of CS, the outputs are
maintained in the high impedance state.
6: Don't apply inverted phase signal externally when DQ pin is output mode.
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M5M51016BTP,RT-10VL-I,
-10VLL-I
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS (Ta = -40 ~ 85o C , unless otherwise noted)
Symbol
Parameter
Test conditions
VCC (PD)
Power down supply voltage
Min
2
VI (BC)
Byte control input BC1 & BC2
2.0
VI (CS)
Chip select input CS
3.0V < VCC(PD)
VCC(PD) < 3.0V
Power down supply current
VCC = 3V
-VL
1) CS < 0.2V
other inputs = 0 ~ 3V
2) BC1 & BC2 > Vcc 0.2V,
-VLL
CS > VCC 0.2V,other inputs=0~3V
ICC (PD)
Limits
Typ
Max
Unit
V
V
0.6
0.2
V
100
µA
20
0.3
(Note 7)
Limits
Typ
Max
o
Note7. ICC (PD) = 1µA in case of Ta = 25 C
(2) TIMING REQUIREMENTS (Ta = -40 ~ 85o C , unless otherwise noted )
Symbol
tsu (PD)
trec (PD)
Parameter
Test conditions
Power down set up time
Power down recovery time
Min
0
5
Unit
ns
ms
(3) POWER DOWN CHARACTERISTICS
BC control mode
VCC
t su (PD)
3.0V
3.0V
t rec (PD)
2.0V
2.0V
BC1 & BC2
BC1 & BC2
> VCC
0.2V
CS control mode
VCC
CS
t su (PD)
3.0V
3.0V
0.2V
t rec (PD)
0.2V
CS < 0.2V
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