Mitsubishi M5M5256DRV-70LL 262144-bit (32768-word by 8-bit) cmos static ram Datasheet

'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
FEATURE
Type
Access Power supply current
time
Active Stand-by
(max)
(max)
(max)
M5M5256DP, FP,VP,RV-45LL
45ns
M5M5256DP, FP,VP,RV-55LL
55ns
20µA
(Vcc=5.5V)
M5M5256DP, FP,VP,RV-70LL
70ns
55mA
(Vcc=5.5V)
M5M5256DP, FP,VP,RV-45XL
5µA
45ns
(Vcc=5.5V)
M5M5256DP, FP,VP,RV-55XL
55ns
0.05µA
M5M5256DP, FP,VP,RV-70XL
70ns
(Vcc=3.0V,
Typical)
•Single +5V power supply
•No clocks, no refresh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prevents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current··········0.05µA(typ.)
A14
A12
1
2
A7
3
A6
4
A5
5
A4
6
7
A3
A2
8
A1
9
A0
10
DQ1 11
DQ2 12
DQ3 13
GND 14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/W
A13
A8
A9
A11
/OE
A10
/S
DQ8
DQ7
DQ6
DQ5
DQ4
Outline 28P4 (DP)
28P2W-C (DFP)
22 /OE
23 A11
24 A9
25 A8
26 A13
27 /W
28Vcc
1 A14
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
M5M5256DVP
A10 21
/S 20
DQ8 19
DQ7 18
DQ6 17
DQ5 16
DQ415
GND 14
DQ3 13
DQ2 12
DQ1 11
A0 10
A1 9
A2 8
Outline 28P2C-A (DVP)
PACKAGE
M5M256DP
: 28 pin 600 mil DIP
M5M5256DFP
: 28 pin 450 mil SOP
M5M5256DVP,RV : 28pin 8 X 13.4 mm2
PIN CONFIGURATION (TOP VIEW)
M5M5256DP,FP
The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
Especially the M5M5256DVP,RV are packaged in a 28-pin thin
small outline package.Two types of devices are available,
M5M5256DVP(normal lead bend type package),
M5M5256DRV(reverse lead bend type package). Using both types of
devices, it becomes very easy to design a printed circuit board.
TSOP
APPLICATION
Small capacity memory units
7 A3
6 A4
5 A5
4 A6
3 A7
2 A12
1 A14
28 Vcc
27 /W
26 A13
25 A8
24 A9
23 A11
22 /OE
M5M5256DRV
A2 8
A1 9
A0 10
DQ1 11
DQ2 12
DQ3 13
GND 14
DQ4 15
DQ5 16
DQ6 17
DQ7 18
DQ8 19
/S 20
A10 21
Outline 28P2C-B (DRV)
MITSUBISHI
ELECTRIC
1
'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
FUNCTION
The operation mode of the M5M5256DP,FP,VP,RV is
determined by a combination of the device control inputs /S,
/W and /OE. Each mode is summarized in the function table.
A write cycle is executed whenever the low level /W
overlaps with the low level /S. The address must be set up
before the write cycle and must be stable during the entire
cycle. The data is latched into a cell on the trailing edge of
/W, /S, whichever occurs first, requiring the set-up and hold
time relative to these edge to be maintained. The output
enable /OE directly controls the output stage. Setting the
/OE at a high level,the output stage is in a high-impedance
state, and the data bus contention problem in the write cycle
is eliminated.
A read cycle is executed by setting /W at a high level and
/OE at a low level while /S are in an active state.
When setting /S at a high level, the chip is in a
non-selectable mode in which both reading and writing are
disabled. In this mode, the output stage is in a
high-impedance state, allowing OR-tie with other chips and
memory expansion by /S. The power supply current is
reduced as low as the stand-by current which is specified
as Icc3 or Icc4, and the memory data can be held at +2V
power supply, enabling battery back-up operation during
power failure or power-down operation in the non-selected
mode.
FUNCTION TABLE
/S
/W
/OE
Mode
DQ
Icc
H
X
X
Non selection
High-impedance
Stand-by
L
L
X
Write
DIN
Active
L
H
L
Read
DOUT
Active
L
H
H
High-impedance
Active
1
X 8BIT
A 12
22
A7
3
A6
4
A5
5
A4
6
A3
7
8
A1
9
A0
10
A 10
21
A 11
23
A9
24
WRITE CONTROL
INPUT /W
27
CHIP SELECT
INPUT
20
/S
OUTPUT ENABLE
/OE
INPUT
COLUMN
DECODER
A2
(512 ROWS X
512 COLUMNS)
CLOCK
GENERATOR
22
OUTPUT BUFFER
A 14
11
DQ1
12
DQ2
13
DQ3
15
DQ4
16
DQ5
17
DQ6
18
DQ7
19
DQ8
28
VCC
(5V)
14
GND
(0V)
DATA I/O
DATA INPUT
BUFFER
32768 WORD
ROW DECODER
26
ADDRESS INPUT
BUFFER
25
A 13
ADDRESS INPUT
BUFFER
ADDRESS
INPUT
A8
SENSE ANPLIFIER
BLOCK DIAGRAM
MITSUBISHI
ELECTRIC
2
'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply voltage
Vcc
VI
VO
Pd
Topr
Tstg
Conditions
Input voltage
Output voltage
Power dissipation
Operating temperature
Storage temperature
Ratings
-0.3*~7.0
-0.3*~Vcc+0.3
With respect to GND
Unit
V
V
V
mW
(Max 7.0)
0~Vcc
700
0~70
-65~150
Ta=25°C
°C
°C
* -3.0V in case of AC ( Pulse width ≤ 30ns )
DC ELECTRICAL CHARACTERISTICS
Symbol
(Ta=0~70°C, Vcc=5V±10%, unless otherwise noted)
Parameter
Limits
Test conditions
Min
Typ
Max
Unit
2.2
Vcc
+0.3
V
-0.3
0.8
V
VIH
High-level input voltage
VIL
Low-level input voltage
VOH1
High-level output voltage 1
IOH=-1mA
2.4
V
VOH2
High-level output voltage 2
IOH=-0.1mA
Vcc
-0.5
V
VOL
II
Low-level output voltage
IOL=2mA
0.4
V
Input current
VI=0~Vcc
±1
uA
IO
Output current in off-state
/S=VIH or or /OE=VIH,
VI/O=0~Vcc
±1
uA
Icc1
Active supply current
Icc2
35
50
(AC, MOS level )
45ns
/S≤0.2V,
Other inputs<0.2V or >Vcc-0.2V 55ns
Output-open Min. cycle
70ns
30
25
45
40
Active supply current
/S=VIL,
other inputs=VIH or VIL
Output-open Min. cycle
45ns
55ns
35
30
55
50
70ns
25
45
(AC, TTL level )
Icc3
Stand-by current
/S≥Vcc-0.2V,
other inputs=0~Vcc
Icc4
Stand-by current
/S=VIH,other inputs=0~Vcc
-LL
mA
mA
20
-XL
0.1
5
3
uA
mA
* -3.0V in case of AC ( Pulse width ≤ 30ns )
CAPACITANCE
Symbol
CI
CO
(Ta=0~70°C, Vcc=5V±10%, unless otherwise noted)
Parameter
Input capacitance
Output capacitance
Test conditions
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Min
Limits
Typ Max
6
8
Unit
pF
pF
Note 0: Direction for current flowing into an IC is positive (no mark).
1: Typical value is one at Ta = 25°C.
2: CI, CO are periodically sampled and are not 100% tested.
MITSUBISHI
ELECTRIC
3
'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS
(1) MEASUREMENT CONDITIONS
(Ta = 0~70°C, Vcc=5V±10%, unless otherwise noted )
Input pulse level···················VIH=2.4V,VIL=0.6V
Input rise and fall time··········5ns
Reference level····················VOH=VOL=1.5V
Output loads·························Fig.1,CL=30pF (-45LL,-45XL )
CL=50pF (-55LL,-55XL )
CL=100pF (-70LL,-70XL )
CL=5pF (for ten,tdis)
Transition is measured ±500mV from steady
state voltage. (for ten,tdis)
Vcc
1.8kΩ
DQ
990Ω
CL
(Including
scope and JIG)
Fig.1 Output load
(2) READ CYCLE
Symbol
Parameter
tCR
ta(A)
ta(S)
ta(OE)
tdis(S)
tdis(OE)
ten(S)
ten(OE)
tV(A)
Read cycle time
Address access time
Chip select access time
Output enable access time
Output disable time after /S high
Output disable time after /OE high
Output enable time after /S low
Output enable time after /OE low
Data valid time after address
-45LL, XL
Min Max
45
45
45
25
15
15
5
5
10
Limits
-55LL, XL
Min Max
55
55
55
30
20
20
5
5
10
-70LL, XL
Min Max
70
70
70
35
25
25
5
5
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
(3) WRITE CYCLE
-45LL, XL
Min Max
tCW
45
Write cycle time
tw(W)
Write pulse width
35
tsu(A)
Address setup time
0
tsu(A-WH) Address setup time with respect to /W high 40
tsu(S)
Chip select setup time
40
tsu(D)
Data setup time
20
th(D)
Data hold time
0
trec(W)
Write recovery time
0
tdis(W)
Output disable time from /W low
15
tdis(OE) Output disable time from /OE high
15
ten(W)
Output enable time from /W high
5
ten(OE)
Output enable time from /OE low
5
Symbol
Parameter
MITSUBISHI
ELECTRIC
Limits
-55LL, XL
Min Max
55
40
0
50
50
25
0
0
20
20
5
5
-70LL, XL
Min Max
70
50
0
65
65
30
0
0
25
25
5
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
(4) TIMING DIAGRAMS
Read cycle
tCR
A0~14
ta(A)
tv (A)
ta (S)
/S
(Note 3)
ta (OE)
tdis (S)
(Note 3)
tdis (OE)
(Note 3)
ten (OE)
/OE
(Note 3)
ten (S)
DATA VALID
DQ1~8
/W = "H" level
Write cycle (/W control mode)
tCW
A0~14
tsu (S)
/S
(Note 3)
(Note 3)
tsu (A-WH)
/OE
tsu (A)
tw (W)
trec (W)
/W
tdis (W)
tdis (OE)
ten (W)
ten(OE)
DATA IN
STABLE
DQ1~8
(Note 3)
(Note 3)
tsu (D)
MITSUBISHI
ELECTRIC
th (D)
5
'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Write cycle ( /S control mode)
tCW
A0~14
tsu (A)
tsu (S)
trec (W)
/S
(Note 5)
/W
(Note 4)
(Note 3)
DQ1~8
tsu (D)
th (D)
(Note 3)
DATA IN
STABLE
Note 3 : Hatching indicates the state is "don't care".
4 : Writing is executed in overlap of /S and /W low.
5 : If /W goes low simultaneously with or prior to /S, the outputs remain in the high impedance state.
6 : Don't apply inverted phase signal externally when DQ pin is output mode.
7 : ten, tdis are periodically sampled and are not 100% tested.
MITSUBISHI
ELECTRIC
6
'97.4.7
MITSUBISHI LSIs
M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL,
-45XL,-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Vcc (PD)
(Ta = 0~70°C, Vcc=5V±10%, unless otherwise noted)
Parameter
Test conditions
Min
2
2.2
Power down supply voltage
2.2V≤VCC(PD)
VI (/S)
Chip select input /S
Icc (PD)
Power down supply current
2V≤VCC(PD)≤2.2V
Limits
Typ Max
V
V
VCC(PD)
Vcc = 3V,/S≥Vcc-0.2V,
Other inputs=0~Vcc
Unit
V
10
-LL
(Note 7)
-XL
0.05
2
uA
(Note 8)
Note7: ICC (PD) = 1uA in case of Ta = 25°C
Note8: ICC (PD) = 0.2uA in case of Ta = 25°C
(2) TIMING REQUIREMENTS (Ta = 0~70°C, Vcc=5V±10%, unless otherwise noted )
Symbol
tsu (PD)
trec (PD)
Parameter
Test conditions
Power down set up time
Power down recovery time
Min
Limits
Typ Max
Unit
ns
ns
0
tCR
(3) POWER DOWN CHARACTERISTICS
/S control mode
Vcc
tsu (PD)
4.5V
4.5V
2.2V
2.2V
/S
trec (PD)
/S≥Vcc-0.2V
MITSUBISHI
ELECTRIC
7
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