MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. FEATURES Four package configurations (P, FP, GP and KP) ● Medium breakdown voltage (BVCEO ≥ 35V) ● Synchronizing current (IC(max) = 300mA) ● With zener diodes ● Low output saturation voltage ● Wide operating temperature range (Ta=–40 to +85°C) ● PIN CONFIGURATION IN1→ 1 INPUT 16 → O1 IN2→ 2 15 → O2 IN3→ 3 14 → O3 IN4→ 4 13 → O4 IN5→ 5 12 → O5 IN6→ 6 11 → O6 IN7→ 7 10 → O7 8 GND OUTPUT NC 9 16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP) NC : No connection CIRCUIT DIAGRAM OUTPUT Vz=7V APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND The seven circuits share the GND. FUNCTION The M63802P, M63802FP, M63802GP and M63802KP each have seven circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. ABSOLUTE MAXIMUM RATINGS Symbol The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω (Unless otherwise noted, Ta = –40 ~ +85°C) Parameter Conditions VCEO Collector-emitter voltage Output, H IC VI Collector current Current per circuit output, L Input voltage M63802P Pd Unit V mA –0.5 ~ +35 1.47 V M63802FP M63802GP 1.00 0.80 M63802KP Operating temperature 0.78 –40 ~ +85 Storage temperature –55 ~ +125 Power dissipation Ta = 25°C, when mounted on board Topr Tstg Ratings –0.5 ~ +35 300 W °C °C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VO Parameter Limits Test conditions Output voltage Duty Cycle no more than 45% M63802P Collector current (Current per 1 circuit IC M63802FP when 7 circuits are coming on simulta- M63802GP neously) M63802KP Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% VIN Input voltage min typ max 0 0 — — 35 250 0 0 0 0 — — — — 160 250 130 250 0 0 0 0 — — — — 120 250 120 30 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE(sat) VIN(on) h FE ICEO = 10µA IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA “On” input voltage IIN = 1mA, IC = 10mA min 35 — — 13 typ — — — 19 max — 0.2 0.8 23 VCE = 10V, IC = 10mA 50 — — DC amplification factor SWITCHING CHARACTERISTICS Symbol ton Parameter V V V — Limits Test conditions CL = 15pF (note 1) min — typ 140 max — — 240 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Unit (Unless otherwise noted, Ta = 25°C) Turn-on time Turn-off time toff Limits Test conditions Vo 50% Measured device 50% INPUT RL PG OUTPUT 50Ω CL OUTPUT 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 18V (2)Input-output conditions : RL = 220Ω, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Input Characteristics Thermal Dirtying Factor Characteristics 4 M63802P 1.5 Input current II (mA) Power dissipation Pd (W) 2.0 M63802FP 1.0 M63802GP 0.744 M63802KP 0.520 0.418 0.406 0.5 0 0 25 50 75 85 20 25 30 400 1~4 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 1~2 300 3 4 200 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty Cycle-Collector Characteristics (M63802FP) Duty Cycle-Collector Characteristics (M63802FP) 400 4 5 6 7 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta=25°C 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) Collector current Ic (mA) 15 Duty Cycle-Collector Characteristics (M63802P) 1~3 0 10 Duty Cycle-Collector Characteristics (M63802P) 300 0 5 Input voltage VI (V) 400 100 1 0 0 100 200 0 Ta = 25°C 2 Ambient temperature Ta (°C) 300 0 Ta = –40°C Ta = 85°C 400 100 3 300 100 1 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 0 0 20 40 60 80 3 4 5 6 7 100 Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY Duty Cycle-Collector Characteristics (M63802GP/KP) 400 300 1~ 2 200 3 4 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 Duty Cycle-Collector Characteristics (M63802GP/KP) IB = 0.5mA 50 0.4 0.6 Collector current Ic (mA) Collector current Ic (mA) 80 100 VI = 28V IB = 1.5mA 80 VI = 24V VI = 20V 60 VI = 16V VI = 12V 40 20 0 0.8 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics DC Amplification Factor Collector Current Characteristics 103 100 II = 2mA VCE = 10V Ta = –40°C DC amplification factor hFE Collector current Ic (mA) 60 Ta = 25°C VI = 32V IB = 1mA Ta = 25°C Ta = 85°C 60 40 20 0 40 100 IB = 2mA 100 0 20 Output Saturation Voltage Collector Current Characteristics 150 80 0 Output Saturation Voltage Collector Current Characteristics 0.2 3 4 56 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 Duty cycle (%) IB = 3mA 0 2 Duty cycle (%) Ta = 25°C 0 1 200 0 100 250 200 300 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) 7 Ta = 25°C 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Jan. 2000