MITSUBISHI RF POWER MODULE M68731HM SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 18.8±1 23.9±1 H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=145-174MHz, ZG=ZL=50Ω f=145-174MHz, ZG=ZL=50Ω f=145-174MHz, ZG=ZL=50Ω Ratings 9.2 6 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Parameter Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Test conditions VDD=7.2V, VGG=3.5V, Pin=50mW Limits Min 145 6.5 45 Max 174 -20 4 Unit MHz W % dBc - - Stability ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1 No parasitic oscillation - - Load VSWR tolerance VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 No degradation or destroy - Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97