MITSUBISHI RF POWER MODULE M68732SH SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 18.8±1 23.9±1 H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=490-512MHz, ZG=ZL=50Ω f=490-512MHz, ZG=ZL=50Ω f=490-512MHz, ZG=ZL=50Ω Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Parameter Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Test conditions VDD=7.2V, VGG=3.5V, Pin=50mW Limits Min 490 7 40 Max 512 -25 4 Unit MHz W % dBc - - Stability ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1 No parasitic oscillation - - Load VSWR tolerance VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 No degradation or destroy - Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE M68732SH SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 70 9 VGG=3.5V, VDD=7.2V f=490/520MHz 8 PO 8 60 7 7 55 6 50 5 45 ηT 4 9 65 40 4 40 3 30 2 25 1 490 500 510 520 20 530 ηT (fL) ηT (fH) 0 -10 9 6 80 60 10 50 8 4 40 6 3 30 ηT (fL) 10 1.5 2 2.5 3 10 15 0 20 70 PO (fL) PO (fH) 3.5 GATE VOLTAGE VDD (V) 0 4 60 50 ηT (fL) 4 40 30 ηT (fH) 20 1 1 5 80 VGG=3.5V Pin=17dBm f=490/520MHz 12 5 0 0.5 0 14 70 ηT (fH) -5 OUTPUT POWER, TOTAL EFFICIENCY VS. SUPPLY VOLTAGE 90 VGG=3.5V Pin=17dBm f=490/520MHz PO (fL) PO (fH) 2 20 INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 7 30 10 FREQUENCY f (MHz) 8 60 PO (fH) 50 2 0 480 70 5 35 ρin 80 PO (fL) 6 3 1 90 VGG=3.5V, VDD=7.2V f=490/520MHz 2 20 0 3 4 5 6 7 8 10 9 SUPPLY VOLTAGE VDD (V) Nov. ´97