MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45 2 3 42 2-R1.5 1 4 5 5 18 5 8.5 (36.5) PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 35 1.5 6.4 1.5 32.2 H50 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω Ratings 9 5.5 6 6 -30 to +100 -40 to +100 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol Parameter Test conditions Limits Min 896 3.8 Max 941 f PO 2fO ρin Frequency range Output power 2nd. harmonic Input VSWR ηT Total efficiency PO=3.8W(VGG=Adjust), VDD=7.2V, Pin=1mW, ZG=ZL=50Ω Stability ZG=ZL=50Ω, VDD=5-9.3V, Load VSWR <4:1 No parasitic oscillation Load VSWR tolerance VDD=9V, Pin=1mW, PO=3.8W (VGG Adjust), ZL=20:1 No degradation or destroy VDD=7.2V, VGG=5V, Pin=1mW, ZG=ZL=50Ω -30 4 30 Unit MHz W dBc % Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 5.0 50 PO 4.5 45 4.0 40 3.5 35 ηT 3.0 30 2.5 25 2.0 20 1.5 VDD=7.2V 1.0 VGG=5V 0.5 Pin=1mW ZG=ZL=50 Ω 0.0 840 860 880 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10 100.00 f=896MHz PO VDD=7.2V VGG=5V ZG=ZL=50Ω 10.0 1 15 ρin 10 5 900 920 0 960 940 0.1 -25 1.0 -20 FREQUENCY f (MHz) 10 100.00 f=941MHz VDD=7.2V VGG=5V ZG=ZL=50Ω PO ηT 10.0 1 1.0 -20 -15 -10 -5 -15 -10 -5 0 5 INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 0.1 -25 ηT 0 5 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 5.0 50 f=896MHz P O 4.5 45 VDD=7.2V 4.0 Pin=1mW 40 ZG=ZL=50 Ω η T 3.5 35 3.0 30 2.5 25 2.0 20 1.5 15 1.0 10 0.5 5 0.0 2.5 3.0 3.5 4.0 4.5 0 5.0 INPUT POWER Pin (dBm) GATE SUPPLY VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 5.0 50 4.5 PO 4.0 45 14 70 f=896MHz VGG=5V Pin=1mW ZG=ZL=50Ω 12 40 3.5 ηT 3.0 35 30 10 60 PO 50 8 40 ηT 2.5 25 2.0 20 6 30 15 4 20 2 10 1.5 f=941MHz VDD=7.2V Pin=1mW ZG=ZL=50 Ω 1.0 0.5 0.0 2.5 3.0 3.5 4.0 4.5 GATE SUPPLY VOLTAGE VGG (V) 10 5 0 5.0 0 0 2 4 6 8 10 12 0 14 DRAIN SUPPLY VOLTAGE VDD (V) Nov. ´97 MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 f=941MHz 12 VGG=5V 60 Pin=1mW PO 10 ZG=ZL=50Ω 50 8 40 ηT 6 30 4 20 2 10 0 0 2 4 6 8 10 12 0 14 DRAIN SUPPLY VOLTAGE VDD (V) Nov. ´97