MC74VHC1GT00 Single 2-Input NAND Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A / SC70−5 / SOT−353 DF SUFFIX CASE 419A M The MC74VHC1GT00 is a single gate 2−input NAND fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The device input is compatible with TTL−type input thresholds and the output has a full 5 V CMOS level output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic−level translator from 3 V CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V CMOS Logic while operating at the high voltage power supply. The MC74VHC1GT00 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1GT00 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. VH M G G 1 5 5 VH M G G 1 TSOP−5 / SOT23−5 / SC59−5 DT SUFFIX CASE 483 1 Features • • • • • • • • • • High Speed: tPD = 3.1 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load VH = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Power Down Protection Provided on Inputs and Outputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 64 NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant IN B 1 IN A 2 GND 3 IN A 3 GND 4 OUT Y 5 VCC Inputs 4 OUT Y & © Semiconductor Components Industries, LLC, 2014 IN B FUNCTION TABLE OUT Y Output A B Y L L H H L H L H H H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Figure 2. Logic Symbol June, 2014 − Rev. 13 1 2 5 VCC Figure 1. Pinout IN A IN B PIN ASSIGNMENT 1 Publication Order Number: MC74VHC1GT00/D MC74VHC1GT00 MAXIMUM RATINGS Symbol Characteristics VCC DC Supply Voltage VIN DC Input Voltage VOUT DC Output Voltage IIK Input Diode Current VCC = 0 High or Low State IOK Output Diode Current IOUT DC Output Current, per Pin ICC DC Supply Current, VCC and GND TSTG Value Unit −0.5 to +7.0 V −0.5 to +7.0 V −0.5 to 7.0 −0.5 to VCC + 0.5 V −20 mA +20 mA +25 mA VOUT < GND; VOUT > VCC Storage Temperature Range _C _C SC70−5/SC−88A/SOT−353 (Note 1) SOT23−5/TSOP−5/SC59−5 350 230 _C/W SC70−5/SC−88A/SOT−353 SOT23−5/TSOP−5/SC59−5 150 200 mW Junction Temperature Under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85_C FR Flammability Rating VESD Level 1 Oxygen Index: 28 to 34 Latchup Performance UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) u2000 u200 N/A V Above VCC and Below GND at 125_C (Note 5) $500 mA ESD Withstand Voltage ILATCHUP _C 260 Lead Temperature, 1 mm from Case for 10 Seconds TJ Moisture Sensitivity mA )150 TL MSL +50 *65 to )150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics VCC DC Supply Voltage VIN DC Input Voltage VOUT DC Output Voltage TA VCC = 0 High or Low State Operating Temperature Range tr , tf VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Input Rise and Fall Time Min Max Unit 3.0 5.5 V 0.0 5.5 V 0.0 0.0 5.5 VCC V −55 +125 °C 0 0 100 20 ns/V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80 ° C 117.8 TJ = 90 ° C 1,032,200 TJ =100° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ =110 ° C Time, Years TJ =120° C Time, Hours TJ = 130 ° C Junction Temperature °C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74VHC1GT00 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min 1.4 2.0 2.0 VIH Minimum High−Level Input Voltage 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 3.0 4.5 5.5 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VOL Maximum Low−Level Output Voltage VIN = VIH or VIL TA ≤ 85°C TA = 25°C VCC (V) Typ Max Min 1.4 2.0 2.0 0.53 0.8 0.8 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA Max 3.0 4.5 −55 ≤ TA ≤ 125°C Min Max 1.4 2.0 2.0 0.53 0.8 0.8 V 0.53 0.8 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ICCT Quiescent Supply Current Input: VIN = 3.4 V 5.5 1.35 1.50 1.65 mA IOFF Power Off Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns TA ≤ 85°C TA = 25°C Symbol tPLH, tPHL CIN Parameter Maximum Propagation Delay, Input A or B to Y Min Typ Max Max Unit VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.1 5.5 10.0 13.5 11.0 15.0 13.0 17.5 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.1 3.6 6.9 7.9 8.0 9.0 9.5 10.5 5.5 10 10 10 Test Conditions Maximum Input Capacitance Min Max −55 ≤ TA ≤ 125°C Min pF Typical @ 25°C, VCC = 5.0 V CPD 11 Power Dissipation Capacitance (Note 6) pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1GT00 3.0 V A or B 50% GND tPHL tPLH VOH Y 50% VCC VOL Figure 4. Switching Waveforms VCC OUTPUT INPUT CL* *Includes all probe and jig capacitance. A 1−MHz square input wave is recommended for propagation delay tests. Figure 5. Test Circuit ORDERING INFORMATION Package Shipping† SC70−5/SC−88A/SOT−353 (Pb−Free) 3000/Tape & Reel SOT23−5/TSOP−5/SC59−5 (Pb−Free) 3000/Tape & Reel Device M74VHC1GT00DFT1G M74VHC1GT00DFT2G NLVVHC1GT00DFT2G* M74VHC1GT00DTT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 4 MC74VHC1GT00 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 http://onsemi.com 5 SCALE 20:1 mm Ǔ ǒinches INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1GT00 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE K NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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