Panasonic MA10700 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3J700
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
2.1 ± 0.1
1.25 ± 0.1
0.425
0.425
2.0 ± 0.2
1.3 ± 0.1
0.65 0.65
• S-mini type 3-pin package
• Allowing to rectify under (IF(AV) = 500 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
Reverse voltage (DC)
Unit
VR
40
V
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF(AV)
500
mA
Non-repetitive peak forward
surge current*
IFSM
2
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +150
°C
+ 0.1
0.15 − 0.05
Rating
3
0.9 ± 0.1
Symbol
1
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.3 − 0
+ 0.1
■ Features
1 : Anode
2 : NC
3 : Cathode
Flat S-Mini Type Package (3-pin)
Marking Symbol: M2W
Internal Connection
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 35 V
100
µA
Forward voltage (DC)
VF
IF = 500 mA
0.55
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
60
pF
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 0.1 · IR, RL = 100 Ω
5
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3J700
Schottky Barrier Diodes (SBD)
IF  V F
103
25°C
− 20°C
10
1
10−1
Ta = 100°C
0.6
0.5
IF = 500 mA
0.4
0.3
100 mA
0.2
0
0.1
0.2
0.3
0.4
0.5
0
−40
0.6
Forward voltage VF (V)
40
80
120
160
200
10
1 000
70
300
60
50
40
30
20
0
120
Ambient temperature Ta
2
10
160
(°C)
200
0
10
20
30
20
30
40
50
60
IF(surge)  tW
80
10
80
0
Reverse voltage VR (V)
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
Reverse current IR (µA)
102
40
10
Ct  VR
VR = 15 V
0
25°C
Ambient temperature Ta (°C)
103
1
−40
102
1
0
IR  T a
104
103
10 mA
0.1
10−2
Reverse current IR (µA)
Forward voltage VF (V)
Forward current IF (mA)
104
0.7
Ta = 100°C
102
IR  VR
VF  Ta
0.8
40
50
Reverse voltage VR
(V)
60
Ta = 25°C
IF(surge)
tW
Non repetitive
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
Pulse width tW (ms)
10
30
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