Mitsubishi MA1113-1 For pcs - 20w power amplifier Datasheet

MA1113-1
MA1113-1
For PCS - 20W Power Amplifier
DESCRIPTION
2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω)
OUTLINE DRAWING
The MA1113-1 is a 20W power amplifier
designed for PCS, which comprises 4 stages
GaAs FET and 2 stages Si bipolar transistors,
also RF power monitoring circuit.
No.
Symbol
Condition
148 mm
3 mm
142 mm
1
Frequency
2
Output Power
3
Output RF modulation
spectrum ; from
the carrier 100 KHz
200 KHz
250 KHz
400 KHz
600 KHz
to < 1200 KHz
1200
KHz
to < 1800 KHz
1800
KHz
to < 6000 KHz
> 6000 KHz
=
MA1113-1
77
mm
71
mm
FEATURES
■Specified +25/+10 Volt Chracteristics
• RF Output Power : +43 dBm (typ.)
• Harmonics : –65 dBc typ.
■Small Size : 77 × 148 × 40 mm3
■50 Ohm Input/Output Impedances
3
mm
4 HOLES
φ 3.5 mm
Vg(–6V:PIN#12)
Vdet(PIN#13)
(out)
GND(PIN#11)
40
mm
APPLICATION
Items
RF IN
■PCS (1930 ~ 1990 MHz)
Base station
(Pin control)
Symbol
Condition
Standard
Unit
TC
–40 ~ +70
°C
Tstg
–40 ~ +80
°C
1
Case temperature
2
Storage temperature
3
Collector Voltage
VC
+26.0
V
4
Drain Voltage
Vd
Vg = –6V
+11.5
V
5
Gate Voltage
Vg
Vd = +10V
–10.0
V
6
RF Input Power
Pin
–9.0
dBm
– 96 –
1930
–––
1990
MHz
+43
–––
–––
dBm
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
+0.5
–30
–33
–60
–70
dB
dB
dB
dB
dB
–––
–––
–73
dB
–––
–––
–75
dB
–––
–––
–80
dB
–––
–––
–––
–––
–36
–30
dBm
dBm
5
Harmonics
2fo
3fo
4fo
Pout = +43 dBm
–––
–––
–––
–60
–65
–70
–––
–––
–––
dBc
dBc
dBc
6
Quiescent current
Icq
Pin = 0mW
–––
–––
1.5
A
Vc(+25V:PIN#25)
1. Maximum Ratings
Items
Max
Pout = +43 dBm
Amplifier Specifications (MA1113-1)
No.
Type
Spurious ; in-band
out-band
RF OUT
Vd(+10V:PIN#24)
Pout
–––
Unit
Min
4
25 PINs D-SUB
10 mm
f
Standard
– 97 –
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