Switching Diodes MA3S132D 0.28 ± 0.05 Silicon epitaxial planar type • Short reverse recovery time trr • Small terminal capacitance, Ct • Super-small SS-mini type package contained two elements, allowing high-density mounting Reverse voltage (DC) 0.28 ± 0.05 1 3 Rating Unit VR 80 V 0.60 − 0.03 + 0.05 0.12 − 0.02 + 0.05 0.28 ± 0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Symbol Unit : mm 1.60 ± 0.1 0.80 ± 0.05 + 0.05 ■ Features Parameter 0.80 1.60 − 0.03 0.80 0.80 0.51 0.51 For switching circuits 0.44 0.44 + 0.05 0.88 − 0.03 Peak reverse voltage Single Forward current (DC) VRM 80 V IF 100 mA Double Peak forward Single current Double Non-repetitive peak forward surge current* Double 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 SS-Mini Type Package (3-pin) 150 IFM 225 mA Marking Symbol: MO 340 Single IFSM 500 mA Internal Connection 750 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 3 Note) * : t = 1 s 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 15 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 10 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA3S132D Switching Diodes IF V F VF Ta IR V R 103 104 1.6 Ta = 150°C 1.4 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 Forward voltage VF (V) 103 Reverse current IR (nA) Forward current IF (mA) 102 100°C 102 25°C 10 1.2 1.0 0.8 IF = 100 mA 0.6 10 mA 3 mA 0.4 1 0.2 10−2 0 0.2 0.4 0.6 0.8 1.0 10−1 1.2 0 Forward voltage VF (V) 20 40 60 80 IR Ta 102 10 1 6 5 4 3 2 1 40 80 120 160 Ambient temperature Ta (°C) 2 200 0 0 20 40 60 80 1 000 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 6V 0 40 120 160 200 IF(surge) tW f = 1 MHz Ta = 25°C 7 35 V 103 −40 0 Ambient temperature Ta (°C) Ct VR 8 VR = 75 V 10−1 0 −40 120 Reverse voltage VR (V) 104 Reverse current IR (nA) 100 80 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30