Panasonic MA2B150 Silicon epitaxial planar type Datasheet

Switching Diodes
MA2B150, MA2B161, MA2B162, MA2B162A
Silicon epitaxial planar type
For switching circuits
Unit : mm
φ 0.56 max.
■ Features
• Short reverse recovery time trr
• Small terminal capacitance, Ct
1
Symbol
VR
MA2B162
MA2B162A
Repetitive peak MA2B150
reverse voltage
MA2B161
MA2B162
MA2B162A
Average forward current
Repetitive peak forward current
Rating
35
50
Unit
V
IF(AV)
IFRM
75
120
35
50
75
120
100
225
mA
mA
Non-repetitive peak forward
surge current*
IFSM
500
mA
Junction temperature
Storage temperature
Tj
Tstg
200
−55 to +150
°C
°C
VRRM
1st Band
2nd Band
24 min.
Parameter
Reverse voltage MA2B150
(DC)
MA2B161
4.5 max.
■ Absolute Maximum Ratings Ta = 25°C
24 min.
COLORED BAND
INDICATES
CATHODE
V
2
φ 1.95 max.
1 : Cathode
2 : Anode
JEDEC : DO-35
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
MA2B150
IR
Conditions
Min
MA2B150
VF
VR
Ct
VR = 15 V
VR = 30 V
VR = 15 V
VR = 50 V
VR = 20 V
VR = 75 V
VR = 20 V
VR = 120 V
VR = 35 V, Ta = 150°C
VR = 50 V, Ta = 150°C
VR = 75 V, Ta = 150°C
VR = 75 V, Ta = 150°C
IF = 100 mA
IR = 5 µA
VR = 0 V, f = 1 MHz
Reverse recovery time* MA2B150
trr
IF = 10 mA, VR = 1 V, RL = 100 Ω
MA2B161
MA2B162
MA2B162A
MA2B150
MA2B161
MA2B162
MA2B162A
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
MA2B161/162/162A
Measure when Irr = 0.1 · IR
■ Cathode Indication
Type No.
Color
MA2B150 MA2B161
MA2B162 MA2B162A
1st Band
White
Green
Violet
Black
2nd Band



Black
Typ
0.012
0.012
50
50
0.95
Max
Unit
0.025
0.1
0.025
5
0.025
5
0.025
5
100
100
100
100
1.2
µA
2
V
V
pF
10
ns
35
0.9
2.2
4
Note) 1. Rated input/output frequency:
100 MHz
2. * : trr measuring circuit
1
MA2B150, MA2B161, MA2B162, MA2B162A
Switching Diodes
IF  V F
103
Input Pulse
tp
tr
Output Pulse
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
trr
IF
90%
VR
102
t
Forward current IF (mA)
Bias Application Unit N-50BU
trr measuring circuit
10
Ta = 150°C
1
75°C
25°C
− 20°C
10−1
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
IR  VR
IR  V R
102
102
MA2B161
MA2B162
MA2B162A
MA2B150
Ta = 150°C
10−1
25°C
10−2
0.8
100°C
1
10−1
25°C
10−2
20
30
40
0
20
VR = 35 V
Reverse current IR (µA)
Reverse current IR (µA)
1
10−1
10−2
80
40
80
120
0
−40
100
0
MA2B161
MA2B162
MA2B162A
160
200
VR = 120 V
80
120
160
200
f = 1 MHz
Ta = 25°C
75 V
50 V
20 V
1.6
160
Ambient temperature Ta (°C)
200
MA2B150
1.2
MA2B161, MA2B162, MA2B162A
0.8
0.4
0
40
120
Ct  VR
10−1
0
80
2.0
1
10−3
40
Ambient temperature Ta (°C)
10−2
Ambient temperature Ta (°C)
2
60
10
15 V
0
0.1 mA
IR  T a
102
MA2B150
10
1 mA
Reverse voltage VR (V)
IR  Ta
102
40
Terminal capacitance Ct (pF)
10
10 mA
0.4
0.01 mA
10−3
0
IF = 20 mA
0.6
0.2
Reverse voltage VR (V)
10−3
Forward voltage VF (V)
100°C
1
10−3
Ta = 150°C
10
Reverse current IR (µA)
Reverse current IR (µA)
10
VF  Ta
1.0
0
4
8
12
16
Reverse voltage VR (V)
20
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