PANASONIC MA2P701

Schottky Barrier Diodes (SBD)
MA2P701, MA2P701A
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.0 ± 0.5
3.0 ± 0.2
MA2P701
Repetitive peak
reverse voltage
MA2P701
1.5 ± 0.2
Rating
Unit
VR
20
V
0.4 ± 0.2
1 : Anode
2 : Cathode
Mini Type Power Package (2pin)
40
VRRM
20
MA2P701A
V
40
Peak forward current
IFM
2
A
Average forward current*1
IF(AV)
1
A
Non-repetitive peak forward
surge current*2
IFSM
6
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0 to 0.14
Symbol
MA2P701A
0.3 ± 0.1
0.7 ± 0.1
5.0 ± 0.5
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage
(DC)
1
2
because of its low thermal resistance (Rth(j-a))
Parameter
1.5 ± 0.1
4.0 ± 0.2
• Low forward rise voltage VF, optimum for low-voltage rectification
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• Allowing large-current rectification in spite of its small-size
0.5 ± 0.1
■ Features
Marking Symbol
• MA2P701 : 701
• MA2P701A : 701A
Note) *1 : With a printed-circuit board (copper foil area cathode side)
2 mm × 10 mm or more (copper foil area anode side)
1 mm × 10 mm or more. Board thickness t = 1.6 mm
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
MA2P701
IR
MA2P701A
Conditions
Min
Typ
VR = 20 V
Max
Unit
1
mA
VR = 40 V
2
Forward voltage (DC)
VF
IF = 1.0 A
0.55
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
210
pF
Reverse recovery time*2
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
14
ns
0.15
°C/mW
High voltage rectification*1
Rth(j-a)
V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 150 MHz
10 mm
10 mm
3. *1 : With a printed-circuit board (copper foil area cathode side)
K
A
2 mm × 10 mm or more (copper foil area anode side)
2 mm
1 mm
1 mm × 10 mm or more. Board thickness t = 1.6 mm
*2 : trr measuring instrument
1
MA2P701, MA2P701A
Schottky Barrier Diodes (SBD)
Common characteristics charts
Bias Application Unit N-50BU
IF  V F
VF  Ta
104
0.8
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tp
tr
Output Pulse
t
10%
90%
VR
trr
IF
t
Forward current IF (mA)
Pulse Generator
(PG-10N)
Rs = 50 Ω
75°C
102
25°C
10
0.6
0.5
0.4
IF = 1 A
0.3
0.2
1
50 mA
0.1
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
0.7
− 20°C
Ta = 125°C
103
Forward voltage VF (V)
A
10−1
0
0.2
0.4
0.6
0.8
Forward voltage VF
0
−40
1.0
(V)
0
40
80
120
160
Ambient temperature Ta ( C)
trr measuring instrument
Characteristics charts of MA2P701
IR  VR
Ct  VR
10
f = 1 MHz
Ta = 25°C
75°C
10−1
10−2
25°C
10−3
0
5
10
15
20
25
10 V
200
100
0
30
VR = 20 V
Reverse current IR (mA)
Reverse current IR (mA)
1
Terminal capacitance Ct (pF)
Ta = 125°C
10−4
IR  Ta
300
10
0
Reverse voltage VR (V)
5
10
15
20
25
30
1
10−1
10−2
10−3
−40
Reverse voltage VR (V)
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of MA2P701A
IR  VR
Ct  VR
Ta = 125°C
Terminal capacitance Ct (pF)
Reverse current IR (mA)
75°C
10−1
25°C
10−3
10−4
0
10
20
30
40
50
Reverse voltage VR (V)
2
10
VR = 40 V
f = 1 MHz
Ta = 25°C
1
10−2
IR  T a
300
60
20 V
Reverse current IR (mA)
10
200
100
0
0
5
10
15
20
25
Reverse voltage VR (V)
30
1
10−1
10−2
10−3
−40
0
40
80
120
160
Ambient temperature Ta (°C)
200