Panasonic MA3X153A Silicon epitaxial planar type Datasheet

Switching Diodes
MA3X153, MA3X153A
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8 − 0.3
1.45
0.95
0.65 ± 0.15
1
3
+ 0.1
• Small terminal capacitance, Ct
• Two diodes are connected in series in the package
1.5
0.95
+ 0.2
2.9 − 0.05
■ Features
1.9 ± 0.2
0.65 ± 0.15
+ 0.25
− 0.05
2
40
V
MA3X153A
Peak reverse
voltage
MA3X153A
MA3X153
Forward current
(DC)
Single
Peak forward
current
Single
+ 0.1
0.16 − 0.06
VR
MA3X153
Reverse voltage
(DC)
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Unit
0.8
Rating
+ 0.2
Symbol
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
80
VRM
40
V
80
IF
100
Series
mA
65
IFM
200
Series
0.4 − 0.05
For switching circuits
mA
130
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1 : Anode 1
2 : Cathode 2
3 : Anode 2
JEDEC : TO-236
Cathode 1
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol
• MA3X153 : MC
• MA3X153A : MP
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
MA3X153
IR
MA3X153A
Forward voltage (DC)
Reverse voltage (DC)
MA3X153
Conditions
Max
Unit
VR = 40 V
0.1
µA
VR = 75 V
0.1
VF
IF = 100 mA
VR
IR = 100 µA
Ct
VR = 0 V, f = 1 MHz
MA3X153A
Terminal capacitance
Reverse recovery time
Min
Typ
1.2
40
V
V
80
5
pF
*1
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
150
ns
trr1*2
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
9
ns
trr
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 2 and 3
*2 : Between pins 1 and 3
1
MA3X153, MA3X153A
Switching Diodes
IF  V F
103
Ta = 25°C
D2 (3-2)
2
10
1
10−1
D1 (1-3)
D2 (3-2)
1
102 Ta = 125°C
2
Reverse current IR (µA)
102
Forward current IF (mA)
Forward current IF (mA)
D1 (1-3)
3
1
103
Ta = 25°C
3
D1 (1-3)
102
IR  V R
IF  V F
103
10
1
10−1
D2 (3-2)
3
10
D1 (1-3)
D2 (3-2)
1
2
1
10−1
D1 (1-3)
10−2
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta = 25°C
0
0.2
0.4
0.6
0.8
1.0
10−2
1.2
0
Forward voltage VF (V)
Forward voltage VF (V)
IR  VR
10
D2 (3-2)
20
30
40
50
Reverse voltage VR (V)
VF  Ta
VF  Ta
1.0
1.0
D1 (1-3)
Ta = 125°C
0.8
3
D1 (1-3)
10−1
D2 (3-2)
1
10−2
2
D1 (1-3)
Ta = 25°C
0.8
IF = 10 mA
0.6
3 mA
1 mA
0.4
3
0.2
D2 (3-2)
0.1 mA
D1 (1-3)
1
Forward voltage VF (V)
D2 (3-2)
1
Forward voltage VF (V)
Reverse current IR (µA)
10
IF = 10 mA
3 mA
1 mA
0.6
0.1 mA
3
0.4
D2 (3-2)
1
2
0.2
2
10−3
20
40
60
80
0
−40
100
Reverse voltage VR (V)
0
40
80
Ambient temperature Ta
IR  Ta
D1 (1-3)
1
102
VR = 80 V
80 V
40 V
10−1
D2 (3-2)
Reverse current IR (µA)
Reverse current IR (nA)
2
D1 (1-3)
3
D1 (1-3)
D2 (3-2)
1
10
2
D2 (3-2)
1
10−1
10−2
40
80
120
160
Ct  VR
f = 1 MHz
Ta = 25°C
40 V
D2 (3-2)
1
0
Ambient temperature Ta (°C)
VR = 40 V
3
D1 (1-3)
0
−40
160
(°C)
IR  T a
103
102
10
120
5
Terminal capacitance Ct (pF)
0
3
3
2
D1 (1-3)
D2 (3-2)
1
1
2
D2 (3-2)
0.5
D1 (1-3)
0.3
0.2
10−3
−40
10−2
0
40
80
120
Ambient temperature Ta (°C)
2
−40
0
40
80
120
Ambient temperature Ta (°C)
0.1
0
10
20
30
40
Reverse voltage VR (V)
50
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