Panasonic MA3X198 Silicon epitaxial planar type Datasheet

Switching Diodes
MA3X198
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8 − 0.3
0.65 ± 0.15
1.45
0.95
1
3
+ 0.1
• Two elements contained in one package, allowing high-density
mounting
• Soft recovery characteristic (trr = 100 ns)
1.5
0.95
+ 0.2
2.9 − 0.05
■ Features
1.9 ± 0.2
0.65 ± 0.15
+ 0.25
− 0.05
0.4 − 0.05
For general purpose
2
Average forward
current
Single
Repetitive peak
forward current
Single
Non-repetitive peak
forward surge current*
Single
Unit
40
V
VRRM
40
V
IF(AV)
100
mA
IFRM
225
Series
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
JEDEC : TO-236
Anode 2
EIAJ : SC-59A
Mini Type Package (3-pin)
75
Series
mA
Marking Symbol: M2F
170
IFSM
500
Series
+ 0.1
+ 0.2
Rating
VR
0 to 0.1
Repetitive peak reverse voltage
Symbol
0.8
Parameter
Reverse voltage (DC)
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
0.16 − 0.06
• Can be connected in series
mA
Internal Connection
325
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1
3
Note) * : t = 1 s
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
IR
Forward voltage (DC)
Terminal capacitance
Reverse recovery
time*
Conditions
Min
Typ
VR = 40 V
VF1
IF = 100 µA
VF2
IR = 100 mA
Ct
VR = 6 V, f = 1 MHz
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
0.65
Max
Unit
10
nA
0.72
V
1.2
V
2
pF
100
ns
1
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA3X198
Switching Diodes
IF  V F
VF  Ta
IR  V R
103
102
1.6
1.4
10
Ta = 150°C
1
100°C
25°C
− 20°C
10−1
Ta = 150°C
10
Forward voltage VF (V)
Reverse current IR (nA)
Forward current IF (mA)
102
100°C
1
25°C
10−1
1.2
1.0
IF = 100 mA
0.8
10 mA
3 mA
0.6
0.4
0.2
10−2
0
0.2
0.4
0.6
0.8
1.0
10−2
1.2
0
Forward voltage VF (V)
10
20
30
40
50
IR  Ta
1V
1
10−1
2.0
1.6
1.2
0.8
0.4
0
40
80
120
160
200
120
0
10
20
30
40
160
200
IF(surge)  tW
Forward surge current IF(surge) (A)
6V
Ambient temperature Ta (°C)
2
Terminal capacitance Ct (pF)
Reverse current IR (nA)
VR = 30 V
80
103
f = 1 MHz
Ta = 25°C
0
40
Ct  VR
2.4
10
0
Ambient temperature Ta (°C)
Reverse voltage VR (V)
102
10−2
−40
0
−40
60
50
Reverse voltage VR (V)
60
Ta = 25°C
IF(surge)
tW
Non repetitive
102
10
1
10−1
0.03
0.1
0.3
1
3
Pulse width tW (ms)
10
30
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