Panasonic MA3X721 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3X721
Silicon epitaxial planar type
Unit : mm
+ 0.2
For super-high speed switching circuit
For small current rectification
2.8 − 0.3
1.45
+ 0.1
3
V
Non-repetitive peak forward
surge current*
IFSM
1
A
+ 0.1
0.16 − 0.06
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Unit
30
0.8
+ 0.2
Rating
VR
1.1 − 0.1
Symbol
Reverse voltage (DC)
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
IFM
300
mA
IF(AV)
200
mA
Marking Symbol: M1M
Junction temperature
Tj
150
°C
Internal Connection
Storage temperature
Tstg
−55 to +150
°C
Average forward current
0.4 − 0.05
0.95
1
2
■ Absolute Maximum Ratings Ta = 25°C
Peak forward current
1.9 ± 0.2
+ 0.2
• Sealed in the mini type mold package, allowing insertion
• Allowing to rectify under (IF(AV) = 200 mA) condition
• High reliability
0.65 ± 0.15
1.5 − 0.05
0.95
2.9 − 0.05
■ Features
Parameter
+ 0.25
0.65 ± 0.15
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
50
µA
0.55
V
Reverse current (DC)
IR
VR = 30 V
Forward voltage (DC)
VF
IF = 200 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
30
pF
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
3.0
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3X721
Schottky Barrier Diodes (SBD)
IF  V F
IR  VR
VF  Ta
103
105
0.5
100°C 25°C
1
10−1
10−2
IF = 200 mA
0.3
100 mA
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0
−40
0.6
Forward voltage VF (V)
0
120
160
20
16
12
8
10 V
5V
103
102
10
4
0
0
5
10
15
20
25
Reverse voltage VR (V)
2
30
1
−40
10
25°C
0
40
80
120
160
Ambient temperature Ta (°C)
0
5
10
15
20
25
Reverse voltage VR (V)
VR = 30 V
104
24
100°C
102
10−1
200
IR  T a
Reverse current IR (µA)
Terminal capacitance Ct (pF)
80
105
f = 1 MHz
Ta = 25°C
28
40
Ambient temperature Ta (°C)
Ct  VR
32
103
1
1 mA
0
Reverse current IR (µA)
10
Ta = 150°C
104
0.4
− 20°C
Ta = 150°C
Forward voltage VF (V)
Forward current IF (mA)
102
200
30
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