MA3ZD12W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 Features • Low forward voltage • Allowing high density mounting 2 1 Marking Code: YR Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 25 V VR 20 V Average Forward Current IF(AV) 700 mA Non-repetitive Peak Forward Surge Current (t = 8.3 ms) IFSM 2 Junction Temperature TJ 125 O Storage Temperature Range Ts - 55 to + 125 O Repetitive Peak Reverse Voltage Reverse Voltage A C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 700 mA VF - 0.45 V Reverse Current at VR = 20 V IR - 200 µA V(BR)R 25 - V CJ - 100 pF Reverse Breakdown Voltage at IR = 600 µA Junction Capacitance at VR = 0, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/05/2008 MA3ZD12W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/05/2008