MA-COM MA4P505-255 Packaged pin diodes - ods-255 case style Datasheet

MA4P202,303,504,505,506 & 604
Packaged PIN Diodes - ODS-255 Case Style
M/A-COM Products
Rev. V3
Features
•
•
•
•
•
High Power PIN Diodes
Fast Speed PIN Diodes
Voltage Ratings to 1000 Volts
Long Carrier Lifetime Designs
High Reliability for Space/Military Applications
Description and Applications
MA-COM's product line of packaged PIN diodes
represents a comprehensive combination of PIN
diode electrical characteristics and package outlines.
This union of semiconductor and packaging technology gives considerable design flexibility to the PIN
diode circuit designer. The fast switching speed PIN
diodes utilize thin I-region silicon dioxide passivated
chips that incorporate careful control of semiconductor processing. These diodes achieve consistent
performance in control circuit applications. The
packaged CERMACHIP PIN diodes employ MACOM's unique hard glass passivated, hermetically
sealed PIN diode chip. The packaged CERMACHIP
PIN diodes are designed for use in high power and
high RF voltage applications. The PIN diode chips
are bonded into hermetically sealed ceramic or glass
packages that are designed for high volume, close
tolerance utilization. Packages are available which
are suitable for mounting in a variety of microwave
and RF circuit media. The packaged silicon PIN diode series has high inherent reliability and is capable of meeting stringent environmental tests. These
diodes may be ordered with testing to selected reliability levels.
Absolute Maximum Ratings1
@ TA = +25 °C (unless otherwise specified)
Parameter
Absolution Max.
Voltage
Voltage Rating
Operating Temperature
- 65°C to +175°C
Storage Temperature
-65°C to +200°C
Max Power Dissipation
Pdiss =
T (max Operating)-25C
Thermal Resistance
1. Operation of this device above any one of these parameters
may cause permanent damage.
Dimension
INCHES
MM
A
0.077
0.083
1.96
2.11
B
0.054
0.063
1.37
1.6
Electrical Specifications TA= +25 C
Part Number
Minimum Reverse
Voltage
VR @-10μA (VDC)
Maximum
Junction
Capacitance (pF)
Cj @ VR 1 MHz (pF)
Maximum
Series
Resistance
(Ω)
MA4P202-255
100
0.05 @10V
MA4P303-255
200
0.15 @ 10V
Nominal Characteristics
Carrier Lifetime TL
I Region
Thickness (μm)
2.5 @ 10mA
200nsec
19
1.5 @ 10mA
300nsec
20
MA4P504-255
500
0.20 @ 100V
0.60 @ 100mA
1usec
50
MA4P505-255
500
0.35 @ 100V
0.45 @ 100mA
2 usec
50
MA4P506-255
500
0.70 @ 100V
0.30 @ 100mA
3usec
50
MA4P604-255
1000
0.30 @ 100V
1.00 @ 100mA
3usec
90
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
• North America Tel: 800.366.2266 / Fax: 978.366.2266
considering for development. Performance is based on target specifications, simulated results, and/
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
Visit www.macom.com for additional data sheets and product information.
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit- MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
ment to produce in volume is not guaranteed.
product(s) or information contained herein without notice.
Similar pages