Panasonic MA745 Schottky barrier diodes (sbd) Datasheet

Schottky Barrier Diodes (SBD)
MA3J745 (MA745)
Silicon epitaxial planar type
Unit: mm
For switching
0.3+0.1
–0
0.15+0.1
–0.05
5°
1.25±0.1
2.1±0.1
• Low forward voltage VF , optimum for low voltage rectification
• Low VF type of MA3X704A (MA704A)
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• S-Mini type 3-pin package
(0.425)
3
■ Features
1
2
(0.65) (0.65)
0.9±0.1
1.3±0.1
2.0±0.2
5°
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current (DC)
IF
30
mA
Peak forward current
IFM
150
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
(0.15)
Parameter
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Marking Symbol: M2M
Internal Connection
3
1
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
30
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.3
V
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
1.5
pF
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Terminal capacitance
Reverse recovery time
*
Detection efficiency
1.0
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00058AED
1
MA3J745
IF  V F
IR  V R
103
103
−20°C
10
1
10−1
0.8
75°C
102
25°C
10
Forward voltage VF (V)
Reverse current IR (µA)
Ta = 125°C
1.0
Ta = 125°C
75°C 25°C
102
Forward current IF (mA)
VF  Ta
104
IF = 30 mA
0.6
10 mA
0.4
0.2
1
1 mA
10−2
0
0.4
0.8
1.2
1.6
2.0
10−1
2.4
0
Forward voltage VF (V)
5
15
20
IR  T a
30
102
10
1
Terminal capacitance Ct (pF)
VR = 30 V
3V
1V
f = 1 MHz
Ta = 25°C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
10−1
−40
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00058AED
0
−40
0
40
80
120
Ambient temperature Ta (°C)
Ct  VR
3.2
103
25
Reverse voltage VR (V)
104
Reverse current IR (µA)
10
30
160
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2001 MAR
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