Panasonic MA751 Silicon epitaxial planar type (cathode common) Datasheet

Schottky Barrier Diodes (SBD)
MA3G751, MA3G751A (MA751, MA751A)
Silicon epitaxial planar type (cathode common)
Unit: mm
For switching mode power supply
5.0±0.2
(0.7)
15.0±0.3
(3.2)
11.0±0.2
■ Features
Parameter
Symbol
Repetitive peak MA3G751
Rating
VRRM
15.0±0.2
21.0±0.5
16.2±0.5
■ Absolute Maximum Ratings Ta = 25°C
φ 3.2±0.1
(3.5)
Solder Dip
• IF(AV) = 20 A rectification is possible
• Cathode-common dual type
• Low forward voltage VF
• TOP-3F-A1 package
2.0±0.2
5.45±0.3
10.9±0.5
V
1
reverse-voltage
MA3G751A
2
1 : Anode
2 : Cathode
(common)
3 : Anode
EIAJ : SC-92
TOP-3F-A1 Package
3
45
Average forward current
IF(AV)
20
A
Non-repetitive peak forwardsurge-current *
IFSM
150
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
Note) *: Half sine wave; 10 ms/cycle
0.6±0.2
1.1±0.1
Unit
40
2.0±0.1
Marking Symbol
• MA3G751 : MA751
• MA3G751A: MA751A
Internal Connection
1
2
Min
Typ
3
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC) MA3G751
IR
MA3G751A
Forward voltage (DC)
High voltage rectification
VF
Rth(j-c)
Conditions
Max
Unit
mA
VR = 40 V
5
VR = 45 V
5
IF = 10 A
0.55
V
Smoothed current (between junction and case)
1.5
°C/W
Note) Rated input/output frequency: 100 MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00051AED
1
MA3G751, MA3G751A
IF  V F
IR  V R
1
25°C
0.1
Average forward power PD(AV) (W)
105
Ta = 125°C
10
Reverse current IR (µA)
Forward current IF (A)
PD(AV)  IF(AV)
30
106
100
Ta = 150°C
125°C
104
100°C
10
3
102
25°C
10
25
t0
t1
t0 / t1 = 1/6
20
1/3
15
1/2
DC
10
5
100°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
1
0
0
10
20
30
40
Reverse voltage VR (V)
IF(AV)  TC
Average forward current IF(AV) (A)
32
28
t0
t1
24
t0 / t1 = 1/2
20
1/3
16
1/6
12
DC
8
4
0
20
40
60
80
100
120
140
Case temperature TC (°C)
2
50
SKH00051AED
60
0
4
8
12
16
20
24
Average forward current IF(AV) (A)
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2001 MAR
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