MOTOROLA MAC212-8FP Isolated triacs thyristors 12 amperes rms 200 thru 800 volt Datasheet

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SEMICONDUCTOR TECHNICAL DATA
MAC212FP
Series
MAC212AFP
Series
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or
Four Modes (MAC212AFP Series)
MT2
MT1
CASE 221C-02
STYLE 3
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP, MAC212A4FP
MAC212-6FP, MAC212A6FP
MAC212-8FP, MAC212A8FP
MAC212-10FP, MAC212A10FP
VDRM
On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)
preceded and followed by rated current
Circuit Fusing (t = 8.3 ms)
Peak Gate Power (TC = +85°C, Pulse Width = 10 µs)
Average Gate Power (TC = +85°C, t = 8.3 ms)
Peak Gate Current (TC = +85°C, Pulse Width = 10 µs)
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
p 20%)
Value
Unit
Volts
200
400
600
800
IT(RMS)
12
Amps
ITSM
100
Amps
I2t
40
A2s
PGM
20
Watts
PG(AV)
0.35
Watt
IGM
2
Amps
V(ISO)
1500
Volts
TJ
–40 to +125
°C
Tstg
–40 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
2.1
°C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Peak Blocking Current (Either Direction)
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = +125°C
Peak On-State Voltage (Either Direction)
(ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
VTM
p 2%)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
Typ
Max
Unit
—
—
—
—
10
2
µA
mA
—
1.3
1.75
Volts
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A ” SUFFIX ONLY
VGT
mA
—
—
—
—
12
12
20
35
50
50
50
75
Volts
—
—
—
—
0.9
0.9
1.1
1.4
2
2
2
2.5
0.2
0.2
—
—
—
—
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
IH
—
6
50
mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
tgt
—
1.5
—
µs
dv/dt(c)
—
5
—
V/µs
dv/dt
—
100
—
V/µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85°C)
TYPICAL CHARACTERISTICS
P D(AV), AVERAGE POWER DISSIPATION (WATT)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C)
Min
IDRM
125
115
α = 30°
105
60°
90°
α
95
α
85
180°
dc
α = CONDUCTION ANGLE
75
0
2.0
4.0
6.0
8.0
10
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 1. Current Derating
2
12
14
28
24
α
α
20
dc
α = 180°
90°
60°
30°
α = CONDUCTION ANGLE
16
12
8.0
4.0
0
0
2.0
4.0
6.0
8.0
10
12
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 2. Power Dissipation
Motorola Thyristor Device Data
100
I TSM , PEAK SURGE CURRENT (AMP)
i T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
100
50
20
10
5
TJ = 25°C
TJ = 125°C
2
80
60
CYCLE
40
TC = 70°C
f = 60 Hz
20
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
0
1
1
2
0.5
3
5
7
10
NUMBER OF CYCLES
Figure 4. Maximum Nonrepetitive Surge Current
0.1
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
0.2
4.4
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Maximum On-State Characteristics
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
2.8
2
IH , HOLDING CURRENT (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
Figure 5. Typical Gate Trigger Voltage
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
2.4
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
Figure 7. Typical Holding Current
Motorola Thyristor Device Data
60
80
3
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
ZθJC(t) = r(t) • RθJC
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
20
50
t, TIME (ms)
100
200
500
1k
2k
5k
10 k
Figure 8. Thermal Response
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
–B–
F
C
S
P
N
E
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
A
Q
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
SEATING
PLANE
1 2 3
–Y–
K
Z
J
L
G
R
D
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
–––
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
–––
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
CASE 221C-02
Motorola Thyristor Device Data
5
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6
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Motorola Thyristor Device Data
*MAC212FP/D*
MAC212FP/D
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