MOTOROLA Order this document by MAC223FP/D SEMICONDUCTOR TECHNICAL DATA MAC223FP Series MAC223AFP Series Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicongate-controlled devices are needed. ISOLATED TRIACs THYRISTORS 25 AMPERES RMS 200 thru 800 VOLTS • Off-State Voltages to 800 Volts • All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or Four Modes (MAC223AFP Series) MT2 MT1 G CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25° unless otherwise noted.) Rating Symbol Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4FP, MAC223A4FP MAC223-6FP, MAC223A6FP MAC223-8FP, MAC223A8FP MAC223-10FP, MAC223A10FP VDRM On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) Peak Gate Power (t p 2 µs) Average Gate Power (TC = +80°C, t p 2 µs) Peak Gate Voltage (t p 2 µs) p 8.3 ms) Peak Gate Current (t RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range Mounting Torque p 20%) Value Unit Volts 200 400 600 800 IT(RMS) 25 Amps ITSM 250 Amps I2t 260 A2s PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps VGM ±10 Volts V(ISO) 1500 Volts TJ –40 to +125 °C Tstg –40 to +150 °C — 8 in. lb. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking Current(1) (VD = Rated VDRM, Gate Open) Peak On-State Voltage (ITM = 35 A Peak, Pulse Width TJ = 25°C TJ = 125°C p 2 ms, Duty Cycle p 2%) Symbol Min Typ Max Unit IDRM — — — — 10 2 µA mA VTM — 1.4 1.85 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY (VD = Rated VDRM, TJ = 125°C, RL = 10 k) MT(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT mA — — 20 30 50 75 Volts — — 0.2 1.1 1.3 0.4 2 2.5 — 0.2 0.4 — Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) IH — 10 50 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt — 1.5 — µs dv/dt — 40 — V/µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) 125 115 105 2 95 85 75 0 5 10 15 20 25 PD(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. 40 30 20 10 0 0 5 10 15 20 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 25 Motorola Thyristor Device Data VD = 12 V RL = 100 Ω 1 0.5 0.3 0.2 0.1 –60 NORMALIZED HOLD CURRENT NORMALIZED GATE VOLTAGE 3 2 –40 –20 0 20 40 60 80 100 120 VD = 12 V RL = 100 Ω 1 0.5 0.3 0.2 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Gate Trigger Current Figure 4. Gate Trigger Voltage ITM = 200 mA GATE OPEN 1 0.5 0.3 0.2 –40 2 TJ, JUNCTION TEMPERATURE (°C) 2 0.1 –60 3 0.1 –60 140 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Hold Current Motorola Thyristor Device Data 120 140 i TM , INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED GATE CURRENT TYPICAL CHARACTERISTICS 120 140 200 100 50 TJ = 25°C 10 5 1 0.5 0.1 0 1 2 3 4 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 6. Typical On-State Characteristics 3 PACKAGE DIMENSIONS –T– –B– F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. SEATING PLANE C S P N E A Q H STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE 1 2 3 –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C-02 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC223FP/D* MAC223FP/D