MOTOROLA MAC6075B Triacs 4 amperes rms 200 thru 600 volt Datasheet

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by MAC6071/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
• Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct
Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic
Functions
• Gate Triggering 4 Mode — MAC6071A,B, MAC6073A,B, MAC6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MT1
MT2
G
MT2
G
MT2 MT1
CASE 77-08
(TO-225AA)
STYLE 5
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110°C)
Symbol
Value
VDRM
Volts
200
400
600
MAC6071A,B
MAC6073A,B
MAC6075A,B
On-State Current RMS (TC = 85°C)
Unit
IT(RMS)
4
Amps
30
Amps
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
3.7
A2s
Peak Gate Power
PGM
10
Watts
PG(AV)
0.5
Watt
VGM
5
Volts
TJ
–40 to +110
°C
Tstg
–40 to +150
°C
—
8
in. lb.
Peak Surge Current (One Full cycle, 60 Hz, TJ = –40 to +110°C)
Average Gate Power
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (6-32 Screw)(2)
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
 Motorola, Inc. 1996
1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
3.5
°C/W
Thermal Resistance, Junction to Ambient
RθJA
75
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak Blocking Current
(VD = Rated VDRM, gate open)
Symbol
VTM
Peak Gate Trigger Voltage (Continuous dc)
(TJ = –40°C) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
(TJ = 110°C)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
(TJ = 25°C)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
VGT
Holding Current (Either Direction)
(TJ = –40°C) (Main Terminal Voltage = 12 Vdc, Gate Open)
(Initiating Current = 150 mA)
(TJ = 25°C)
IH
Latching Current
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IL
TJ = 25°C
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MAC6071A, MAC6073A, MAC6075A
MT2(+), G(+)
TJ = 25°C
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
2
Typ
Max
Unit
—
—
—
—
10
2.0
µA
mA
—
1.3
2.0
Volts
IDRM
(TJ = 25°C)
(TJ = 110°C)
On-State Voltage (Either Direction)
(ITM = 6 A Peak)
(VD = 6 V)
(IG = 8 mA)
(IG = 8 mA)
(IG = 8 mA)
(IG = 15 mA)
Min
TJ = –40°C
Volts
0.5
0.5
0.8
0.8
1.9
1.9
0.2
0.2
0.4
0.4
0.9
0.9
0.4
0.4
0.7
0.7
1.4
1.4
mA
0.4
0.2
2.0
1.0
10
5.0
—
—
—
—
2.0
5.0
1.0
2.0
10
20
10
10
mA
IGT
mA
0.4
0.4
0.4
0.8
2.0
3.0
3.0
4.5
5.0
5.0
5.0
10
0.8
0.8
0.8
1.6
3.5
4.5
5.0
10
10
10
10
20
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MAC6071B, MAC6073B, MAC6075B
MT2(+), G(+)
TJ = 25°C
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
Min
Typ
Max
Unit
IGT
mA
0.4
0.4
0.4
0.8
1.5
2.5
2.5
3.5
3.0
3.0
3.0
5.0
0.8
0.8
0.8
1.6
3.0
4.0
4.5
7.5
8.0
8.0
8.0
15
tgt
—
1.5
—
µs
Symbol
Min
Typ
Max
Unit
—
2.2
—
—
7.0
—
TJ = –40°C
Turn-On Time (Either Direction)
(ITM = 14 Adc, IGT = 100 mAdc)
DYNAMIC CHARACTERISTICS
Characteristic
Critical Rate of Rise of Off–State Voltage
(VD = 200 V, ITM = 1.4 A, Commutating dv/dt = 0.5 Vm/sec,
Gate Open, TJ = 110°C, f = 250 Hz, Snubber: CS = 0.1 mF, RS = 56 W,
see Figure 16)
(di/dt)c
Critical Rate of Rise of Off–State Voltage
(VD = Rate VDRM, Exponential Waveform, RGK = OPEN, TJ = 110°C)
dv/dt
A/ms
V/ms
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
14
0V
MC7400
4
7
VEE = 5.0 V
+
–VEE
2N6071A
510
Ω
LOAD
115 VAC
60 Hz
QUADRANT DEFINITIONS
MT2(+)
QUADRANT II
QUADRANT I
MT2(+), G(–)
MT2(+), G(+)
QUADRANT III
QUADRANT IV
MT2(–), G(–)
MT2(–), G(+)
G(–)
G(+)
MT2(–)
NOTES: For detail Digital Interfacing and Silicon Bilateral Switch (SBS) trigger application information, see
the Motorola’s Thyristor Data Book (DL137/D, Revision 6).
1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6–25.
2. Silicon Bilateral Switch (SBS) Applications, page 1.6–41.
Motorola Thyristor Device Data
3
105
T = 30°
100
60°
90°
120°
95
α
α
90
180°
α = CONDUCTION ANGLE
85
0
0.5
1.0
1.5
DC
2.0
2.5
3.0
3.5
4.0
180°
120°
α
5.0
α = CONDUCTION ANGLE
90°
4.0
60°
3.0
T = 30°
2.0
1.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 1. RMS Current Derating
Figure 2. Maximum On–State Power
Dissipation
10
MAXIMUM @ TJ = 110°C
1.0
MAXIMUM @ TJ = 25°C
1.0
DC
α
6.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
TYPICAL @ TJ = 25°C
0.01
0.5
7.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
100
0.1
AVERAGE POWER P(AV) DISSIPATION (WATTS)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Z q JC(t) ° C/W TRANSIENT THERMAL RESISTANCE
IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
110
10
MAXIMUM
1.0
0.1
0.1
1.0
10
1S103
100
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
2.5
4.0
1S104
9.0
1.5
IL, LATCHING CURRENT (mA)
IH , HOLDING CURRENT (mA)
8.0
2.0
MT2 NEGATIVE
1.0
MT2 POSITIVE
0.5
7.0
5.0
4.0
4
–20
0
20
40
60
80
100 110
Q4 IG = 15 mA
3.0
2.0 Q1 IG = 8 mA
1.0
0
–40
Q2 IG = 8 mA
6.0
Q3 IG = 8 mA
0
–40
–20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature (MAC6075B)
Motorola Thyristor Device Data
6.0
Q4
Q3
4.0
Q2
Q1
2.0
0
–40
–20
0
20
40
60
80
0.8
0.7
0.6
Q3
Q2
Q1
Q4
0.5
0.4
0.3
–40
100 110
–20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
24
30
RG–MT1 = 510 W
TJ = 110°C
VPK = 400 V
TJ = 100°C
25
20
STATIC dv/dt (V/uS)
22
STATIC dv/dt (V/uS)
0.9
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (mA)
8.0
500 V
18
20
110°C
15
120°C
600 V
16
100
200
300
400
500
600
700
800
900
10
400
1000
450
500
Figure 9. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(+)
Figure 10. Typical Exponential Static dv/dt
versus Peak Voltage, MT2(+)
11
RG–MT1 = 510 W
TJ = 110°C
VPK = 400 V
25
VPK = 400 V
10.5
STATIC dv/dt (V/uS)
STATIC dv/dt (V/uS)
600
VPK, PEAK VOLTAGE (VOLTS)
30
20
550
RGK, GATE–MT1 RESISTANCE (OHMS)
500 V
600 V
10
500 V
9.5
15
600 V
10
100
105
110
115
120
9.0
100
200
300
400
500
600
700
800
900
TJ, JUNCTION TEMPERATURE (°C)
RGK, GATE–MT1 RESISTANCE (OHMS)
Figure 11. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
Figure 12. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(–)
Motorola Thyristor Device Data
1000
5
16
16
RG–MT1 = 510 W
14
TJ = 100°C
STATIC dv/dt (V/uS)
STATIC dv/dt (V/uS)
14
RG–MT1 = 510 W
12
110°C
10
12
VPK = 400 V
500 V
10
600 V
8.0
8.0
120°C
6.0
400
450
500
550
6.0
100
600
105
110
115
VPK, PEAK VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Typical Exponential Static dv/dt
versus Peak Voltage, MT2(–)
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(–)
120
(dv/dt)c, CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/us)
1.2
100°C
TJ = 110°C
90°C
1.1
GATE OPEN
1.0
0.9
0.8
tw
f
0.7
+ 2t1w
0.6
2.4
2.6
2.8
3.0
ń +
(di dt) c
200 V
3.2
6f I TM
1000
3.4
3.6
3.8
4.0
4.2
(di/dt)c, CRITICAL RATE OF CHANGE COMMUTATING CURRENT (A/ms)
Figure 15. Critical Rate of Rise of
Commutating Voltage
80 mHY
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
1N4007
TRIGGER
CHARGE
CHARGE
CONTROL
5 mF
NON–POLAR
CL
TRIGGER CONTROL
MEASURE
I
RS
2
1N914
51
CS
56 W
0.1 mF
ADJUST FOR
dv/dt(c)
200 V
1
G
NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
6
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
1 2 3
H
STYLE 5:
PIN 1. MT 1
2. MT 2
3. GATE
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
M
CASE 77–08
(TO–225AA)
Motorola Thyristor Device Data
7
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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8
◊
Motorola Thyristor Device Data
*MAC6071/D*
MAC6071/D
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