AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 100MHz to 50GHz Features • • • • • • • Top View Shown Is With Diode Junction Up Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitride Passivation Polyimide Scratch Protection Cathode Description M/A-COM's MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode airbridge during handling. Package Outline Electrical Specifications at TA = 25 °C Parameters and Test Conditions Symbol Units Total Capacitance at –5 V Ct pF 1 MHz & DC Specifications Min RF Resistance at +10 mA Rs Ω Forward Voltage at +10 mA Vf Volts Reverse Breakdown Voltage at 10 uA3 Vb Volts Minority Carrier Lifetime τL nS 50 10 GHz Reference 1,2 Data Typ. Max 0.018 0.021 1.33 1.4 Min Typ. Max. 0.018 .021 5.2 6.0 75 4.0 Notes: 1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz. 2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz. 3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating. Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 1 AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 Typical RF Performance MA4AGFCP910 Typical Insertion Loss vs. Frequency 0.0 5mA 10mA 15mA -0.2 Loss (dB) 15 mA 10 mA 5 mA -0.4 -0.6 -0.8 2 10 18 26 34 42 50 Frequency (GHz) Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 2 AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 Typical RF Performance MA4AGFCP910 Typical Return Loss vs. Frequency ( Either Port Direction ) 0 5mA 10mA 15mA -5 -10 Return Loss (dB) 15 mA 10 mA 5 mA -15 -20 -25 -30 -35 2 10 18 26 34 42 50 Frequency (GHz) Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 3 AlGaAs Flip-Chip PIN Diode MA4AGFCP910 Rev 2.0 Typical RF Performance MA4AGFCP910 Typical Isolation vs Frequency 0 -5 Isolation (dB) -10 -15 -20 0V -25 5V -30 -35 2 10 18 26 34 42 50 Frequency (GHz) Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 4 AlGaAs Flip-Chip PIN Diodes MA4AGFCP910 Rev 2.0 Applications The 20 fF capacitance of the MA4AGFCP910 allows use through mmwave switch and switched phase shifter applications. This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required. For surface mount assembly, the low capacitance of the MA4AGFCP910 makes it ideal for use in microwave multithrow switch assemblies, where the series capacitance of each “off” port adversely loads the input port and affects VSWR. Absolute Maximum Ratings @ 25 ˚C Parameter Maximum Ratings Operating Temperature Storage Temperature Junction Temperature Dissipated RF & DC Power RF C.W. Incident Power Mounting Temperature -65 °C to +125 °C -65 °C to +150 °C +175 °C 50 mW +23 dBm C.W. +300 °C for 10 seconds Note: Exceeding these limits may cause permanent damage. Device Installation Procedures The following guidelines should be observed to avoid damaging GaAs Flip-Chips. Cleanliness These devices should be handled in a clean environment. Do Not attempt to Clean Die After installation. Static Sensitivity Gallium arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. These devices are rated Class 0, ( 0-199V ) per HBM MIL-STD-883, method 3015.7 [C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free environment. General Handling These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Die can be handled with plastic tweezers or picked and placed with a #27 tip vacuum pencil. Assembly Requirements using Electrically Conductive Ag Epoxy and Solder These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silkscreened circuits using Electrically Conductive Ag Epoxy, approximately 1-2 mils in thickness and cured at approximately 90°C to 150 °C per manufacturer’s schedule. For extended cure times > 30 minutes, temperatures must be below 200 °C. Sn Rich Solders are not recommended due to the Tungsten Metallization scheme beneath the gold contacts. Indalloy or 80 Au/20 Sn Solders are acceptable. Maximum soldering temperature must be < 300 °C for < 10 sec. Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 5 AlGaAs Flip-Chip PIN Diodes MA4AGFCP910 Rev 2.0 Ordering Information Part Number Packaging MA4AGCP910 Die in Carrier MADP-000910-13050T Tape/Reel Circuit Mounting Dimensions ( Inches ) 0.013 0.012 (2) PL 0.008 (2) PL Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA Telephone: 617-564-3100 6