MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Application Civilian and Military Pulsed Radar Product Description The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical RF Performance Freq. (MHz) Pin Pout (W (W Peak) Gain (dB) Id-Pk (A) Eff (%) 2700 7 109 12 4.2 51 2900 7 112 12 4.4 51 3100 7 109 12 4.2 52 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz, Pulse=500us, Duty=10%. Ordering Information MAGX-002731-100L00 MAGX-002731-SB2PPR 100W GaN Power Transistor Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) Supply Voltage (Vgg) +65V -8 to 0V Supply Current (Id1) Input Power (Pin) 7100 mA Pk +34 dBm Absolute Max. Junction/Channel Temp Pulsed Power Dissipation (Pavg) at 85 ºC 200 ºC 128W Thermal Resistance, (Tchannel = 200 ºC) 0.9 ºC/W VDD = 50V, IDQ = 500mA, Pout = 100W Peak (300us Pulse / 10% Duty) Operating Temp -40 to +95C Storage Temp Mounting Temperature -65 to +150C See solder reflow profile ESD Min. - Machine Model (MM) ESD Min. - Human Body Model (HBM) 50 V >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V IDS - - 6 mA Gate Threshold Voltage VDS = 5V, ID = 15.0mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5V, ID = 3.5mA GM 2.5 - - S DYNAMIC CHARACTERISTICS Input Capacitance Not applicable—Input internally matched CGS N/A N/A N/A pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz CDS - 30.3 35.4 pF Feedback Capacitance VDS = 50V, VGS = -8V, F = 1MHz CGD - 2.8 5.4 pF 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Symbol Min Typ Max Units RF FUNCTIONAL TESTS Vdd=50V, Idq=500mA (pulsed), F=2.7—3.1 GHz, Pulse=500us, Duty=10% Output Power Pin = 7W Peak Power Gain POUT 100 10 105 10.5 - W Peak W Ave Pout = 100W Peak, 10W Ave GP 11.6 12.6 - dB Drain Efficiency Pin = 7W Peak ηD 47 53 - % Load Mismatch Stability Pin = 7W Peak VSWR-S 5:1 - - - Load Mismatch Tolerance Pin = 7W Peak VSWR-T 10:1 - - - Test Fixture Impedance F (MHz) ZIF (Ω) ZOF (Ω) 2700 2900 3100 3.5 - j7.5 3.4 + j0.4 2.7 - j5.3 4.7 - j0.8 2.0 - j4.1 2.5 - j1.7 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Gain vs. Frequency Return Loss vs. Frequency 50V Drain Bias, Idq=0.5A 50V Drain Bias, Idq=0.5A 14 13.5 13 12.5 12 11.5 11 10.5 10 2600 RL(dB) Gain (dB) RF Power Transfer Curve at 50V Drain Bias, Idq=0.5A Output Power vs. Input Power 2800 3000 Frequency (MHz) 3200 16 14 12 10 8 6 4 2 0 2600 2700 2800 2900 3000 3100 3200 Frequency (MHz) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 RF Power Transfer Curve at 65V Drain Bias, Idq=0.5A Output Power vs. Input Power Gain vs. Frequency 65V Drain Bias, Idq=0.5A 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Test Fixture Circuit Dimensions Note: A dwg circuit drawing is available upon request Test Fixture Assembly 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Outline Drawings CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (50V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level 1. Turn the RF power off 2. Decrease VGS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.