MAXIM MAX3397E

19-0771; Rev 0; 4/07
KIT
ATION
EVALU
LE
B
A
IL
A
AV
Dual Bidirectional Low-Level
Translator in µDFN
The MAX3397E ±15kV ESD-protected bidirectional
level translator provides level shifting for data transfer in
a multivoltage system. Externally applied voltages, VCC
and VL, set the logic levels on either side of the device.
A logic-low signal present on the VL side of the device
appears as a logic-low signal on the VCC side of the
device, and vice versa. The MAX3397E utilizes a transmission-gate-based design to allow data translation in
either direction (VL ↔ VCC) on any single data line. The
MAX3397E accepts VL from +1.2V to +5.5V and VCC
from +1.65V to +5.5V, making the device ideal for data
transfer between low-voltage ASICs/PLDs and higher
voltage systems.
The MAX3397E features a shutdown mode that reduces
supply current to less than 1µA, thermal short-circuit protection, and ±15kV ESD protection on the VCC side for
greater protection in applications that route signals externally. The MAX3397E operates at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. See the Timing Characteristics table.
The MAX3397E is available in an 8-pin µDFN package
and specified over the extended -40°C to +85°C operating temperature range.
Applications
Cell Phones, MP3 Players
Telecommunications Equipment
Features
♦ Bidirectional Level Translation
♦ Guaranteed Data Rate
8Mbps (+1.2V ≤ VL ≤ VCC ≤ +5.5V)
16Mbps (+1.8V ≤ VL ≤ VCC ≤ +3.3V)
♦ Extended ESD Protection on the I/O VCC Lines
±15kV Human Body Model
±15kV Air-Gap Discharge per IEC61000-4-2
±8kV Contact Discharge per IEC61000-4-2
♦ Enable/Shutdown
♦ Ultra-Low 1µA Supply Current in Shutdown Mode
♦ 8-Pin µDFN Package
Ordering Information
PART
TEMP
RANGE
PINPACKAGE
MAX3397EELA+
-40°C to
+85°C
8 µDFN
(2mm x 2mm)
TOP
MARK
PKG
CODE
ABU
L822-1
+Denotes a lead-free package.
SPI™, MICROWIRE™, and I2C Level Translation
Pin Configuration
Portable POS Systems, Smart Card Readers
VCC
EN
I/O VL1
8
7
6
5
1
2
3
4
VL
I/O VL2
SPI is a trademark of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
MAX3397E
GND
I/O VCC1
Low-Cost Serial Interfaces, GPS
+
I/O VCC2
Typical Application Circuit appears at end of data sheet.
µDFN
(2mm x 2mm)
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX3397E
General Description
MAX3397E
Dual Bidirectional Low-Level
Translator in µDFN
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND.)
VCC, VL .....................................................................-0.3V to +6V
I/O VCC_......................................................-0.3V to (VCC + 0.3V)
I/O VL_ ..........................................................-0.3V to (VL + 0.3V)
EN.............................................................................-0.3V to +6V
Short-Circuit Duration I/O VL_, I/O VCC_ to GND .......Continuous
Continuous Power Dissipation (TA = +70°C)
8-Pin µDFN (derate 4.8mW/°C above +70°C) ............ 381mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL = +1.2V to 5.5V, I/O VL_, and I/O VCC_ are unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical
values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
VL Supply Range
VCC Supply Range
Supply Current from VCC
Supply Current from VL
VCC Shutdown-Mode Supply
Current
VL Shutdown-Mode Supply
Current
I/O VL_ and I/O VCC_ ShutdownMode Leakage Current
VL
1.2
5.5
V
VCC
1.65
5.50
V
IQVCC
130
300
µA
IQVL
1
10
µA
ISHUTDOWN-VCC
TA = +25°C, EN = GND
0.03
1
µA
ISHUTDOWN-VL
TA = +25°C, EN = GND
0.03
1
µA
ISHUTDOWN-LKG
TA = +25°C, EN = GND
0.02
1
µA
TA = +25°C
0.02
1
µA
EN Input Leakage
Tri-State Threshold Low
VTH_L
VCC falling (Note 3)
1.5
V
Tri-State Threshold High
VTH_H
VCC rising (Note 3)
1
V
ESD PROTECTION
I/O VCC
Human Body Model (Note 4)
±15
kV
LOGIC-LEVEL THRESHOLDS
I/O VL_ Input-Voltage High
VIHL
I/O VL_ Input-Voltage Low
VILL
I/O VCC_ Input-Voltage High
VIHC
I/O VCC_ Input-Voltage Low
VILC
VL 0.2
0.15
VCC 0.4
I/O VL_ Output-Voltage High
VOHL
I/O VL_ Output-Voltage Low
VOLL
I/O VL_ sink current = 1mA,
I/O VCC_ < 0.15V
0.67 x
VL
_______________________________________________________________________________________
V
V
0.15
I/O VL_ source current = 20µA,
I/O VCC_ > VCC - 0.4V
2
V
V
V
0.4
V
Dual Bidirectional Low-Level
Translator in µDFN
(VCC = +1.65V to +5.5V, VL = +1.2V to 5.5V, I/O VL_, and I/O VCC_ are unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical
values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
I/O VCC_ Output-Voltage High
VOHC
I/O VCC_ source current = 20µA,
I/O VL _ > VL - 0.2V
I/O VCC_ Output-Voltage Low
VOLC
I/O VCC_ sink current = 1mA,
I/O VL_ < 0.15V
EN Input-Voltage High
VIH-EN
EN Input-Voltage Low
VIL-EN
MIN
TYP
MAX
0.67 x
VCC
UNITS
V
0.4
VL 0.2
V
V
0.15
V
RISE/FALL-TIME ACCELERATOR STAGE
Transition-Detect Threshold
I/O VCC side
0.8
I/O VL side
0.8
Accelerator Pulse Duration
VL = 1.2V, VCC = 1.65V
27
I/O VL_ Output-Accelerator
Source Impedance
VL = 1.2V, VCC = 1.65V
40
VL = 5V, VCC = 5V
9
I/O VCC_ Output-Accelerator
Source Impedance
VL = 1.2V, VCC = 1.65V
30
VL = 5V, VCC = 5V
12
V
ns
Ω
Ω
TIMING CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL = +1.2V to +5.5V, RLOAD = 1MΩ, CLOAD = 15pF, driver output impedance ≤ 50Ω, I/O test signal of
Figure 1, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
7
25
170
400
Push-pull driving (Figure 1a)
6
37
Open-drain driving (Figure 1c)
6
37
UNITS
+1.2V ≤ VL ≤ VCC ≤ +5.5V
I/O VCC_ Rise Time
tRVCC
I/O VCC_ Fall Time
tFVCC
I/O VL_ Rise Time
tRVL
I/O VL_ Fall Time
tFVL
Push-pull driving (Figure 1a)
Open-drain driving (Figure 1c)
Push-pull driving (Figure 1b)
8
30
180
400
Push-pull driving (Figure 1b)
3
30
Open-drain driving (Figure 1d)
3
30
Open-drain driving (Figure 1d)
tPD-VL-VCC
Driving I/O VL_
tPD-VCC-VL
Driving I/O VCC_
Propagation Delay
Channel-to-Channel Skew
Maximum Data Rate
tSKEW
Each translator
equally loaded
Push-pull driving
Open-drain driving
Push-pull driving (Figure 1a)
Open-drain driving (Figure 1c)
Push-pull driving (Figure 1b)
Open-drain driving (Figure 1d)
5
30
170
800
4
30
190
1000
Push-pull driving
20
Open-drain driving
50
ns
ns
ns
ns
ns
ns
8
Mbps
500
kbps
_______________________________________________________________________________________
3
MAX3397E
ELECTRICAL CHARACTERISTICS (continued)
TIMING CHARACTERISTICS (continued)
(VCC = +1.65V to +5.5V, VL = +1.2V to +5.5V, RLOAD = 1MΩ, CLOAD = 15pF, driver output impedance ≤ 50Ω, I/O test signal of
Figure 1, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
+1.8V ≤ VL ≤ VCC ≤ +3.3V
I/O VCC_ Rise Time
tRVCC
Figure 1a (Note 5)
15
ns
I/O VCC_ Fall Time
tFVCC
Figure 1a (Note 6)
15
ns
I/O VL_ Rise Time
tRVL
Figure 1b (Note 5)
15
ns
I/O VL_ Fall Time
tFVL
Figure 1b (Note 6)
15
ns
tPD-VL-VCC
Driving I/O VL_
15
tPD-VCC-VL
Driving I/O VCC_
15
Each translator equally loaded
10
Propagation Delay
Channel-to-Channel Skew
tSKEW
Maximum Data Rate
16
ns
ns
Mbps
Note 1: All units are 100% production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design
and not production tested.
Note 2: For normal operation, ensure VL < (VCC + 0.3V).
Note 3: When VCC is below VL by more than the tri-state threshold, the device turns off its pullup resistors and I/O_ enters tri-state.
The device is not in shutdown.
Note 4: To ensure maximum ESD protection, place a 1µF capacitor between VCC and GND. See the Typical Application Circuit.
Note 5: 10% of input to 90% of output.
Note 6: 90% of input to 10% of output.
Typical Operating Characteristics
(VCC = +3.3V, VL = +1.8V, RLOAD = 1MΩ, CLOAD = 15pF, TA = +25°C, data rate = 8Mbps, unless otherwise noted.)
VL SUPPLY CURRENT (µA)
200
150
100
800
200
150
100
50
50
700
600
500
400
300
200
100
0
0
0
1.65
2.20
2.75
3.30
3.85
4.40
VCC SUPPLY VOLTAGE (V)
4
250
MAX3397E toc03
250
VCC SUPPLY CURRENT vs. VL SUPPLY VOLTAGE
(DRIVING ONE I/O VL_)
VCC SUPPLY CURRENT (µA)
MAX3397E toc01
300
VL SUPPLY CURRENT vs. VCC SUPPLY VOLTAGE
(DRIVING ONE I/O VCC_)
MAX3397E toc02
VL SUPPLY CURRENT vs. VCC SUPPLY VOLTAGE
(DRIVING ONE I/O VL_)
VL SUPPLY CURRENT (µA)
MAX3397E
Dual Bidirectional Low-Level
Translator in µDFN
4.95
5.50
1.65
2.20
2.75
3.30
3.85
4.40
VCC SUPPLY VOLTAGE (V)
4.95
5.50
1.2
1.9
2.6
VL SUPPLY VOLTAGE (V)
_______________________________________________________________________________________
3.3
Dual Bidirectional Low-Level
Translator in µDFN
160
200
150
100
140
120
100
80
60
200
150
100
50
20
0
0
0
1.2
1.9
2.6
-40
3.3
-15
10
35
60
85
-40
-15
10
35
60
85
VL SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
TEMPERATURE (°C)
VL SUPPLY CURRENT vs. CAPACITIVE LOAD
(DRIVING ONE I/O VL_)
VCC SUPPLY CURRENT vs. CAPACITIVE LOAD
(DRIVING ONE I/O VL_)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING ONE I/O VL_)
80
60
40
800
600
400
20
0
0
0
5
10
tRVCC
0
0
10 15 20 25 30 35 40 45 50
tFVCC
15
5
200
20
MAX3397E toc09
1000
RISE/FALL TIME (ns)
100
25
MAX3397E toc08
120
1200
VCC SUPPLY CURRENT (µA)
MAX3397E toc07
140
5
10 15 20 25 30 35 40 45 50
0
5
10 15 20 25 30 35 40 45 50
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING ONE I/O VL_)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING ONE I/O VCC_)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING ONE I/O VCC_)
8
6
4
8
6
4
2
2
0
0
10
tFVL
MAX3397E toc12
10
RISE/FALL TIME (ns)
10
tRVL
9
8
PROPAGATION DELAY (ns)
12
MAX3397E toc10
12
MAX3397E toc11
VL SUPPLY CURRENT (µA)
250
40
50
PROPAGATION DELAY (ns)
300
VL SUPPLY CURRENT (µA)
250
350
MAX3397E toc05
180
VL SUPPLY CURRENT (µA)
300
VCC SUPPLY CURRENT (µA)
200
MAX3397E toc04
350
VL SUPPLY CURRENT vs. TEMPERATURE
(DRIVING ONE I/O VCC_)
VL SUPPLY CURRENT vs. TEMPERATURE
(DRIVING ONE I/O VL_)
MAX3397E toc06
VCC SUPPLY CURRENT vs. VL SUPPLY VOLTAGE
(DRIVING ONE I/O VCC_)
7
6
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45 50
CAPACITIVE LOAD (pF)
0
0
5
10 15 20 25 30 35 40 45 50
CAPACITIVE LOAD (pF)
0
5
10 15 20 25 30 35 40 45 50
CAPACITIVE LOAD (pF)
_______________________________________________________________________________________
5
MAX3397E
Typical Operating Characteristics (continued)
(VCC = +3.3V, VL = +1.8V, RLOAD = 1MΩ, CLOAD = 15pF, TA = +25°C, data rate = 8Mbps, unless otherwise noted.)
MAX3397E
Dual Bidirectional Low-Level
Translator in µDFN
Typical Operating Characteristics (continued)
(VCC = +3.3V, VL = +1.8V, RLOAD = 1MΩ, CLOAD = 15pF, TA = +25°C, data rate = 8Mbps, unless otherwise noted.)
RAIL-TO-RAIL DRIVING
(DRIVING ONE I/O VL_)
EXITING SHUTDOWN MODE
MAX3397E toc14
MAX3397E toc13
I/O VL_
I/O VL_
1V/div
1V/div
2V/div
I/O VCC_
1V/div
I/O VCC_
1V/div
EN
2µs/div
20ns/div
Pin Description
PIN
NAME
1
I/O VCC2
2
GND
FUNCTION
Input/Output 2. Referenced to VCC.
Ground
Logic-Input Voltage. The supply voltage range is +1.2V ≤ VL ≤ +5.5V. Bypass this supply with a 0.1µF capacitor
located as close as possible to the input.
3
VL
4
I/O VL2
5
I/O VL1
6
EN
Enable Input. Drive EN high to enable the device. Drive EN low to put the device in shutdown mode.
7
VCC
VCC Input Voltage. The supply voltage range is +1.65V ≤ VL ≤ +5.5V. Bypass this supply with a 0.1µF capacitor
located as close as possible to the input. A 1µF ceramic capacitor is recommended for full ESD protection.
8
I/O VCC1
Input/Output 2. Referenced to VL.
Input/Output 1. Referenced to VL.
Input/Output 1. Referenced to VCC.
Detailed Description
The MAX3397E bidirectional, ESD-protected level
translator provides the level shifting necessary to allow
data transfer in a multivoltage system. Externally
applied voltages, VCC and VL, set the logic levels on
either side of the device. A logic-low signal present on
the VL side of the device appears as a logic-low signal
on the VCC side of the device, and vice versa. The
device uses a transmission-gate-based design (see the
Functional Diagram) to allow data translation in either
direction (V L ↔ V CC ) on any single data line. The
MAX3397E accepts VL from +1.2V to +5.5V and VCC
6
from +1.65V to +5.5V, making the device ideal for data
transfer between low-voltage ASICs/PLDs and higher
voltage systems.
The MAX3397E features a shutdown mode that
reduces the supply current to less than 1µA, thermal
short-circuit protection, and ±15kV ESD protection on
the VCC side for greater protection in applications that
route signals externally. The device operates at a guaranteed data rate of 8Mbps over the entire specified
operating voltage range. Within specific voltage
domains, higher data rates are possible. See the
Timing Characteristics table.
_______________________________________________________________________________________
Dual Bidirectional Low-Level
Translator in µDFN
VL
VCC
VL
VCC
VL
VCC
VCC
EN
EN
MAX3397E
MAX3397E
DATA
DATA
GND
I/O VCC_
I/O VL _
I/O VCC_
I/O VL _
MAX3397E
VL
RLOAD
CLOAD
I/O VL_
(tRISE,
tFALL < 10ns)
CLOAD
RLOAD
GND
I/O VCC_
(tRISE,
tFALL < 10ns)
tPD-VL-VCC
tPD-VL-VCC
I/O VCC_
tPD-VCC-VL
tPD-VCC-VL
tRVL
tFVL
I/O VL _
tRVCC
tFVCC
Figure 1a. Rail-to-Rail Driving I/O VL
Figure 1b. Rail-to-Rail Driving I/O VCC
Level Translation
For proper operation, ensure that +1.65V ≤ VCC ≤ +5.5V
and +1.2V ≤ VL ≤ +5.5V. During power-up sequencing,
VL ≥ (VCC + 0.3V) does not damage the device. The
speed-up circuitry limits the maximum data rate for the
MAX3397E to 16Mbps. The maximum data rate also
depends heavily on the load capacitance (see the
Typical Operating Characteristics), output impedance of
the driver, and the operational voltage range (see the
Timing Characteristics table).
Rise-Time Accelerators
The MAX3397E has an internal rise-time accelerator,
allowing operation up to 16Mbps. The rise-time accelerators are present on both sides of the device and act to
speed up the rise time of the input and output of the
device, regardless of the direction of the data. The triggering mechanism for these accelerators is both level
and edge sensitive. To prevent false triggering of the
rise-time accelerators, signal fall times of less than
20ns/V are recommended for both the inputs and outputs
of the device. Under less noisy conditions, longer signal
fall times are acceptable. Note: To guarantee operation
of the rise time, accelerators the maximum parasitic
capacitance should be less than 200pF on the I/O lines.
Shutdown Mode
Drive EN low to place the MAX3397E in shutdown
mode. Connect EN to VL or VCC (logic-high) for normal
operation. Activating the shutdown mode disconnects
the internal 10kΩ pullup resistors on the I/O VCC and
I/O VL lines. This forces the I/O lines to a high-impedance state, and decreases the supply current to less
than 1µA. The high-impedance I/O lines in shutdown
mode allow for use in a multidrop network. The
MAX3397E effectively has a diode from each I/O to the
corresponding supply rail and GND. Therefore, when in
shutdown mode, do not allow the voltage at I/O VL_ to
exceed (V L + 0.3V), or the voltage at I/O V CC_ to
exceed (VCC + 0.3V).
_______________________________________________________________________________________
7
MAX3397E
Dual Bidirectional Low-Level
Translator in µDFN
VL
VL
VCC
VL
VCC
VCC
VL
VCC
EN
EN
MAX3397E
MAX3397E
DATA
DATA
I/O VCC_
I/O VL_
I/O VCC_
I/O VL_
CLOAD
GND
CLOAD
RLOAD
I/O VL_
GND
RLOAD
I/O VCC_
tPD-VL-VCC
tPD-VCC-VL
tPD-VL-VCC
tPD-VCC-VL
I/O VCC_
I/O VL_
tRVCC
tFVCC
Figure 1c. Open-Drain Driving I/O VL
tRVL
tFVL
Figure 1d. Open-Drain Driving I/O VCC
Operation with One Supply Disconnected
Thermal Short-Circuit Protection
Certain applications require sections of circuitry to be
disconnected to save power. When VL is connected and
VCC is disconnected or connected to ground, the device
enters shutdown mode. In this mode, I/O VL can still be
driven without damage to the device; however, data
does not translate from I/O VL to I/O VCC. If VCC falls
more than 0.8V (typ) below VL, the device disconnects
the pullup resistors at I/O VL and I/O VCC. To achieve
the lowest possible supply current from VL when VCC is
disconnected, it is recommended that the voltage at the
VCC supply input be approximately equal to GND. Note:
When VCC is disconnected or connected to ground, I/O
VCC must not be driven more than VCC + 0.3V.
Thermal-overload detection protects the MAX3397E
from short-circuit fault conditions. In the event of a
short-circuit fault, when the junction temperature (TJ)
reaches +150°C, a thermal sensor signals the shutdown mode logic to force the device into shutdown
mode. When the T J has cooled to +140°C, normal
operation resumes.
When VCC is connected and VL is less than 0.7V (typ),
the device enters shutdown mode. In this mode, I/O
VCC can still be driven without damage to the device;
however, data does not translate from I/O VCC to I/O VL.
Note: When V L is disconnected or connected to
ground, I/O VL must not be driven more than VL + 0.3V.
8
±15kV ESD Protection
As with all Maxim devices, ESD-protection structures
are incorporated on all pins to protect against electrostatic discharges encountered during handling and
assembly. The I/O V CC lines have extra protection
against static electricity. Maxim’s engineers have
developed state-of-the-art structures to protect these
pins against ESD of ±15kV without damage. The ESD
structures withstand high ESD in all states: normal
operation, shutdown mode, and powered down. After
an ESD event, Maxim’s E versions keep working without
_______________________________________________________________________________________
Dual Bidirectional Low-Level
Translator in µDFN
VL
VCC
EN
PU1
ONE-SHOT
BLOCK
ONE-SHOT
BLOCK
PU2
TRIGGER
GATE
BIAS
MAX3397E
I/O VL_
I/O VCC_
N
GND
latchup, whereas competing products can latch and
must be powered down to remove latchup. ESD protection can be tested in various ways. The I/O VCC lines of
the MAX3397E are characterized for protection to the
following limits:
1) ±15kV using the Human Body Model
2) ± 8kV using the Contact Discharge method specified
by IEC 61000-4-2
RC 1MΩ
CHARGE-CURRENTLIMIT RESISTOR
HIGHVOLTAGE
DC
SOURCE
Cs
100pF
RD 1500Ω
DISCHARGE
RESISTANCE
DEVICE
UNDER
TEST
STORAGE
CAPACITOR
3) ±15kV using the Air-Gap Discharge method specified
by IEC 61000-4-2
ESD Test Conditions
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents
test setup, test methodology, and test results.
Human Body Model
Figure 2a shows the Human Body Model, and Figure 2b
shows the current waveform it generates when discharged into a low-impedance state. This model consists of a 100pF capacitor charged to the ESD voltage
of interest that is then discharged into the test device
through a 1.5kΩ resistor.
IEC 61000-4-2
The IEC 61000-4-2 standard covers ESD testing and
performance of finished equipment; it does not specifically refer to integrated circuits. The MAX3397E helps
Figure 2a. Human Body ESD Test Model
IP 100%
90%
Ir
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
AMPERES
36.8%
10%
0
0
tRL
TIME
tDL
CURRENT WAVEFORM
Figure 2b. Human Body Current Waveform
_______________________________________________________________________________________
9
MAX3397E
Functional Diagram
to design equipment that meets Level 4 of IEC 610004-2 without the need for additional ESD-protection components.
The major difference between tests done using the
Human Body Model and IEC 61000-4-2 is higher peak
current in IEC 61000-4-2 because series resistance is
lower in the IEC 61000-4-2 model. Hence, the ESD
withstand voltage measured to IEC 61000-4-2 is generally lower than that measured using the Human Body
Model. Figure 3a shows the IEC 61000-4-2 model, and
Figure 3b shows the current waveform for the ±8kV,
IEC 61000-4-2, Level 4, ESD contact-discharge test.
The Air-Gap test involves approaching the device with a
charged probe. The contact-discharge method connects
the probe to the device before the probe is energized.
RC 50MΩ to 100MΩ
CHARGE-CURRENTLIMIT RESISTOR
HIGHVOLTAGE
DC
SOURCE
Cs
150pF
Machine Model
The Machine Model for ESD tests all pins using a
200pF storage capacitor and zero discharge resistance. Its objective is to emulate the stress caused by
contact that occurs with handling and assembly during
manufacturing. Of course, all pins require this protection during manufacturing, not just inputs and outputs.
Therefore, after PCB assembly, the Machine Model is
less relevant to I/O ports.
Applications Information
Power-Supply Decoupling
To reduce ripple and the chance of transmitting incorrect
data, bypass VL and VCC to ground with a 0.1µF capacitor (see the Typical Application Circuit). To ensure full
±15kV ESD protection, bypass VCC to ground with a 1µF
capacitor. Place all capacitors as close as possible to
the power-supply inputs.
RD 330Ω
I2C Level Translation
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
DEVICE
UNDER
TEST
The MAX3397E level-shifts the data present on the I/O
lines between +1.2V and +5.5V, making them ideal for
level translation between a low-voltage ASIC and an
I2C device. A typical application involves interfacing a
low-voltage microprocessor to a 3V or 5V D/A converter, such as the MAX517.
Push-Pull vs. Open-Drain Driving
The MAX3397E can be driven in a push-pull configuration and include internal 10kΩ resistors that pull up I/O
VL_ and I/O VCC_ to their respective power supplies,
allowing operation of the I/O lines with open-drain
devices. See the Timing Characteristics table for maximum data rates when using open-drain drivers.
Figure 3a. IEC 61000-4-2 ESD Test Model
I
100%
Chip Information
90%
PROCESS: BiCMOS
I PEAK
MAX3397E
Dual Bidirectional Low-Level
Translator in µDFN
10%
t r = 0.7ns to 1ns
t
30ns
60ns
Figure 3b. IEC 61000-4-2 ESD Generator Current Waveform
10
______________________________________________________________________________________
Dual Bidirectional Low-Level
Translator in µDFN
+1.8V
+3.3V
0.1µF
0.1µF
VL
1µF
VCC
EN
+1.8V
SYSTEM
CONTROLLER
+3.3V
SYSTEM
MAX3397E
DATA
I/O VL1
I/O VCC1
I/O VL2
I/O VCC2
DATA
______________________________________________________________________________________
11
MAX3397E
Typical Application Circuit
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
A
D
XXXX
XXXX
XXXX
b
e
N
SOLDER
MASK
COVERAGE
E
PIN 1
0.10x45∞
L
PIN 1
INDEX AREA
6, 8, 10L UDFN.EPS
MAX3397E
Dual Bidirectional Low-Level
Translator in µDFN
L1
1
SAMPLE
MARKING
A
A
(N/2 -1) x e)
7
CL
CL
b
L
A
A2
A1
L
e
EVEN TERMINAL
e
ODD TERMINAL
PACKAGE OUTLINE,
6, 8, 10L uDFN, 2x2x0.80 mm
-DRAWING NOT TO SCALE-
12
21-0164
______________________________________________________________________________________
A
1
2
Dual Bidirectional Low-Level
Translator in µDFN
COMMON DIMENSIONS
SYMBOL
MIN.
NOM.
A
0.70
0.75
0.80
A1
0.15
0.20
0.25
0.035
A2
0.020
0.025
D
1.95
2.00
E
1.95
2.00
L
0.30
0.40
L1
MAX.
-
2.05
2.05
0.50
0.10 REF.
PACKAGE VARIATIONS
PKG. CODE
N
e
b
(N/2 -1) x e
L622-1
6
0.65 BSC
0.30±0.05
1.30 REF.
L822-1
8
0.50 BSC
0.25±0.05
1.50 REF.
L1022-1
10
0.40 BSC
0.20±0.03
1.60 REF.
PACKAGE OUTLINE,
6, 8, 10L uDFN, 2x2x0.80 mm
-DRAWING NOT TO SCALE-
21-0164
A
2
2
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 13
© 2007 Maxim Integrated Products
Springer
is a registered trademark of Maxim Integrated Products, Inc.
MAX3397E
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)