Vishay MB2M-E3/45 Miniature glass passivated single-phase bridge rectifier Datasheet

MB2M, MB4M, MB6M
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
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• UL recognition, file number E54214
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• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case Style MBM
Case: MBM
PRIMARY CHARACTERISTICS
Package
MBM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
35 A
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IR
5 μA
Polarity: As marked on body
VF at IF = 0.4 A
1.0 V
TJ max.
150 °C
Diode variations
Quad
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
MB2M
MB4M
MB6M
2
4
6
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
VDC
200
400
600
V
Maximum DC blocking voltage
Maximum average forward output
rectified current (fig. 1)
on glass-epoxy PCB (1)
on aluminum substrate (2)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
IF(AV)
0.5
A
0.8
IFSM
35
A
I2t
5.0
A2s
TJ, TSTG
- 55 to + 150
°C
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
Revision: 16-Aug-13
Document Number: 88660
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB2M, MB4M, MB6M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage per diode
IF = 0.4 A
Maximum DC reverse current at rated DC blocking
voltage per diode
TA = 125 °C
Typical junction capacitance per diode
4.0 V, 1 MHz
SYMBOL
MB2M
MB4M
VF
TA = 25 °C
MB6M
UNIT
1.0
V
5.0
IR
μA
100
13
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB4M
85
RJA (2)
70
RJL (1)
20
RJA
Typical thermal resistance
MB2M
(1)
MB6M
UNIT
°C/W
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.22
45
100
Tube
MB2M-E3/45

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
TA = 40 °C
Single Half Sine-Wave
Aluminum Substrate
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
0.8
0.7
0.6
0.5
Glass
Epoxy
PCB
0.4
0.3
0.2
0.1
Resistive or Inductive Load
0
30
25
f = 50 Hz
20
f = 60 Hz
15
10
5
1.0 Cycle
0
0
20
40
60
80
100
120
140
160
1
10
100
Ambient Temperature (°C)
Number of Cycles
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 16-Aug-13
Document Number: 88660
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB2M, MB4M, MB6M
www.vishay.com
Vishay General Semiconductor
30
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.3
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
25
20
15
10
5
0
0.5
1.1
0.9
0.7
1.3
1.5
0.1
1
10
100
1000
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Reverse Leakage
Current (µA)
100
TJ = 125 °C
10
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style MBM
0.161 (4.10)
0.144 (3.65)
0.190 (4.83)
0.179 (4.55)
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.106 (2.70)
0.090 (2.30)
0.148 (3.75)
0.132 (3.35)
0.029 (0.74)
0.017 (0.43)
Revision: 16-Aug-13
0.105 (2.67)
0.095 (2.41)
10° to 15°
0.016 (0.41)
0.006 (0.15)
0.147 (3.73)
0.137 (3.48)
0.028 (0.71)
0.020 (0.51)
Document Number: 88660
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000