BCD MBR10100CTF-G1 High voltage power schottky rectifier Datasheet

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
General Description
MBR10100C
Main Product Characteristics
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
IF(AV)
2×5A
VRRM
100V
TJ
150°C
VF(max)
0.75V
The MBR10100C is available in standard TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
Mechanical Characteristics
Features
•
•
•
•
•
•
•
•
•
High Surge Capacity
150°C Operating Junction Temperature
10A Total (5A Per Diode Leg)
Guard-ring for Stress Protection
Pb-free Packages are available
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
•
•
•
TO-220F-3
Power Supply Output Rectification
Power Management
Instrumentation
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR10100C
Mar. 2011
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Pin Configuration
T Package
(TO-220-3) (Optional)
(TO-220-3 (2))
TF Package
(TO-220F-3)
Figure 2. Pin Configuration of MBR10100C (Top View)
Figure 3. Internal Structure of MBR10100C
Mar. 2011
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Ordering Information
MBR10100C
TO-220F-3
Circuit Type
E1: Lead Free
G1: Green
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
Blank: Tube
Part Number
Package
TO-220-3 (2)
-
Lead Free
Green
MBR10100CTE1
MBR10100CTF
-E1
MBR10100CTG1
MBR10100CTF
-G1
Marking ID
Lead Free
MBR10100CTE1
MBR10100CTFE1
Green
MBR10100CTG1
MBR10100CTFG1
Packing
Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Mar. 2011
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC=136°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=134°C
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave, Single Phase,
60Hz)
Operating Junction Temperature Range (Note 2)
VRRM
VRWM
VR
100
V
IF(AV)
5
A
IFRM
10
A
IFSM
100
A
TJ
150
°C
Storage Temperature Range
TSTG
-55 to 150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/µs
ESD (Machine Model=C)
> 400
V
ESD (Human Body Model=3B)
> 8000
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.
Recommended Operating Conditions
Parameter
Symbol
Condition
θJC
Junction to Case
θJA
Junction
Ambient
Value
Maximum Thermal Resistance
Mar. 2011
Rev. 1. 3
to
Unit
TO-220-3/
TO-220-3 (2)
3.0
TO-220F-3
4.5
TO-220-3/
TO-220-3 (2)
60
TO-220F-3
60
°C/W
°C/W
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Electrical Characteristics
Parameter
Maximum Instantaneous Forward
Voltage Drop (Note 3)
Maximum Instantaneous Reverse
Current (Note 3)
Symbol
VF
IR
Conditions
Value
IF=5A, TC=25°C
0.85
IF=5A, TC=125°C
0.75
IF=10A, TC=25°C
0.95
IF=10A, TC=125°C
0.85
Rated
DC
TC=125°C
Voltage,
6.0
Rated
DC
TC=25°C
Voltage,
Unit
V
mA
0.1
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Mar. 2011
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Typical Performance Characteristics
10000
100
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
o
10
o
TJ=150 C
1
o
TJ=125 C
0.1
TJ=150 C
1000
100
o
TJ=125 C
10
1
0.1
o
TJ=25 C
0.01
o
TJ=25 C
1E-3
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Figure 5. Typical Reverse Current Per Diode
Figure 4. Typical Forward Voltage Per Diode
10
Average Forward Current AMPS
9
8
7
6
5
4
3
2
1
0
100
105
110
115
120
125
130
135
140
145
150
155
o
Case Temperature ( C)
Figure 6. Average Forward Current vs.
Case Temperature (Per Diode)
Mar. 2011
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Mechanical Dimensions
TO-220-3
Unit: mm(inch)
(Optional)
9.660(0.380)
10.660(0.420)
0.550(0.022)
1.350(0.053)
1.500(0.059)
1.160(0.046)
1.760(0.069)
27.880(1.098)
30.280(1.192)
8.520(0.335)
9.520(0.375)
14.230(0.560)
16.510(0.650)
1.850(0.073)
3.560(0.140)
4.060(0.160)
2.580(0.102)
3.380(0.133)
0.200(0.008)
7°
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
3°
7°
0.381(0.015)
60°
0.813(0.032)
8.763(0.345)
60°
0.381(0.015)
2.540(0.100)
Mar. 2011
2.540(0.100)
Rev. 1. 3
0.356(0.014)
0.406(0.016)
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Mechanical Dimensions (Continued)
TO-220-3 (2)
Unit: mm(inch)
9.800(0.386)
10.200(0.402)
1.620(0.064)
1.820(0.072)
3.560(0.140)
3.640(0.143)
0.600(0.024)
REF
1.200(0.047)
1.400(0.055)
1.200(0.047)
1.400(0.055)
3°
4.400(0.173)
4.600(0.181)
2.200(0.087)
2.500(0.098)
3°
3.000(0.118)
REF
3°
1.170(0.046)
1.390(0.055)
0.700(0.028)
0.900(0.035)
2.540(0.100)
REF
Mar. 2011
0.400(0.016)
0.600(0.024)
2.540(0.100)
REF
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100C
Mechanical Dimensions (Continued)
Unit: mm(inch)
2.790(0.110)
4.500(0.177)
TO-220F-3
Mar. 2011
Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
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