Naina Semiconductor Ltd. MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol Conditions MBR12045CT (R) MBR12060CT MBR12080CT (R) (R) MBR120100C T(R) Units VRRM 45 60 80 100 V VRMS 32 42 56 70 V VDC 45 60 80 100 V IF(AV) TC ≤ 140 oC 120 120 120 120 A IFSM TC = 25 oC tp = 8.3 ms 800 800 800 800 A MBR12045CT (R) MBR12060CT (R) MBR12080CT (R) MBR120100C T(R) Units 0.68 0.75 0.86 0.86 V 3 3 3 3 Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol DC forward voltage VF DC reverse current IR Conditions IF = 60 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC mA 200 200 200 200 Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range 1 Symbol MBR12045CT (R) MBR12060CT (R) MBR12080CT (R) MBR120100C T(R) RthJ-C 0.8 0.8 0.8 0.8 TJ , Tstg - 40 to +175 - 40 to +175 - 40 to +175 - 40 to +175 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com Units o C/W o C Naina Semiconductor Ltd. MBR12045CT thru MBR120100CTR Package Outline ALL DIMENSIONS IN MM Ordering Table MBR 1 120 2 45 3 CT 4 1 – Device Type > MBR = Schottky Barrier Diode Module 2 – Current Rating = IF(AV) 3 – Voltage = code x 10 = VRRM 4 – Polarity > CT = Normal (Cathode to Base) > CTR = Reverse (Anode to Base) 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com