Vishay MBR1645-N3 Schottky rectifier, 16 a Datasheet

VS-MBR16...PbF Series, VS-MBR16...-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 16 A
FEATURES
Base
cathode
2
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
1
Cathode
TO-220AC
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
3
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
TO-220AC
IF(AV)
16 A
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
VR
35 V, 45 V
VF at IF
0.57 V
IRM max.
40 mA at 125 °C
TJ max.
150 °C
Diode variation
Single die
EAS
24 mJ
DESCRIPTION
The VS-MBR16... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
16 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
16
A
35/45
V
1800
A
0.57
V
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse
voltage
Maximum working peak
reverse voltage
VS-MBR1635PbF
VS-MBR1635-N3
VS-MBR1645PbF
VS-MBR1645-N3
UNITS
35
35
45
45
V
VR
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
IF(AV)
TEST CONDITIONS
TC = 134 °C, rated VR
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
Non-repetitive avalanche energy
Repetitive avalanche current
Revision: 29-Aug-11
IFSM
Following any rated load
condition and with rated
VRRM applied
VALUES
UNITS
16
A
1800
A
Surge applied at rated load condition half wave
single phase, 60 Hz
150
EAS
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
24
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.6
A
Document Number: 94286
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
TEST CONDITIONS
16 A
TJ = 25 °C
TJ = 125 °C
0.63
TJ = 125 °C
0.57
Rated DC voltage
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
LS
Measured from top of terminal to mounting plane
dV/dt
VALUES
TJ = 25 °C
Rated VR
UNITS
V
0.2
mA
40
1400
pF
8.0
nH
10 000
V/µs
VALUES
UNITS
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
- 65 to 150
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
1.50
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
°C/W
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
Marking device
Revision: 29-Aug-11
°C
Case style TO-220AC (JEDEC)
MBR1635
MBR1645
Document Number: 94286
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
IF - Instantaneous Forward Current (A)
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Vishay Semiconductors
100
100
IR - Reverse Current (µA)
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
0.001
1
0.0001
0
0.2
0.4
0.6
1.0
0.8
0
1.2
5
10
20
15
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
0
10
30
20
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
0.01
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 29-Aug-11
Document Number: 94286
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
www.vishay.com
Vishay Semiconductors
15
150
Average Power Loss (W)
Allowable Case Temperature (°C)
155
145
140
DC
Square wave (D = 0.50)
Rated VR applied
135
130
125
10
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
5
DC
See note (1)
120
0
5
0
10
15
20
25
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR applied
(1)
Revision: 29-Aug-11
Document Number: 94286
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
16
45
PbF
3
4
5
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
Current rating (16 = 16 A)
4
-
Voltage ratings
5
-
Environmental digit
35 = 35 V
45 = 45 V
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-MBR1635PbF
50
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-MBR1635-N3
50
1000
Antistatic plastic tube
VS-MBR1645PbF
50
1000
Antistatic plastic tube
VS-MBR1645-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 29-Aug-11
www.vishay.com/doc?95221
TO-220AC PbF
www.vishay.com/doc?95224
TO-220AC -N3
www.vishay.com/doc?95068
Document Number: 94286
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
3
D
D
L1
E
A1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
θ
D1
1
2
A
(6)
H1
(7)
(6) D
1
2 3
Lead tip
L3
C
E1
(6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
L4
L
c
e1
A
Conforms to JEDEC outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
A2
2.56
2.92
0.101
0.115
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
E2
-
0.76
-
0.030
7
e
2.41
2.67
0.095
0.105
e1
4.88
5.28
0.192
0.208
4
H1
6.09
6.48
0.240
0.255
L
13.52
14.02
0.532
0.552
4
L1
3.32
3.82
0.131
0.150
c
0.36
0.61
0.014
0.024
L3
1.78
2.13
0.070
0.084
c1
0.36
0.56
0.014
0.022
4
L4
0.76
1.27
0.030
0.050
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.

90° to 93°
6, 7
2
2
90° to 93°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Revision: 12-Mar-12
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Document Number: 91000
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