BCDSEMI MBR2045CT-E1

Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Main Product Characteristics
General Description
High efficiency dual Schottky rectifier suited for
switch mode power supplies and other power converters. This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are required.
IF(AV)
2*10A
VRRM
45V
TJ
150oC
VF(max)
0.57V
MBR2045C is available in TO-220-3 and TO-220F-3
packages.
Mechanical Characteristics
Features
·
·
·
·
·
·
·
·
·
·
Low Forward Voltage: 0.57V @125oC
Low Power Loss/High Efficiency
150oC Operating Junction Temperature
20 A Total (10A Each Diode Leg)
Guard-Ring for Stress Protection
High Surge Capacity
Pb-Free Package
·
·
·
Case: Epoxy, Molded
Epoxy Meets UL 94 V-0 @ 0.125 in
Weight (Approximately):
1.9 Grams (TO-220-3, TO-220F-3)
Finish: All External Surfaces Corrosion Resistant
and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260oC Maximumfor 10 Seconds
Applications
·
·
·
Power Supply Output Rectification
Power Management
Instrumentation
TO-220-3
TO-220F-3
Figure 1. Package Types of MBR2045C
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Pin Configuration
T/TFPackage
(TO-220-3/TO-220F-3)
3
A2
2
K
1
A1
A2
K
A1
(Front View)
Figure 3. Internal Structure of MBR2045C
Figure 2. Pin Configuration of MBR2045C
Ordering Information
MBR2045C
Package
-
Circuit Type
E1: Lead Free
Package
T: TO-220-3
TF: TO-220F-3
Blank: Tube
Part Number
Marking ID
Packing Type
TO-220-3
MBR2045CT-E1
MBR2045CT-E1
Tube
TO-220F-3
MBR2045CTF-E1
MBR2045CTF-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR) TC=139oC
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC=137oC
IFRM
20
A
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz)
IRRM
1.0
A
TJ
150
oC
Storage Temperature Range
TSTG
-65 to 150
oC
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/µs
ESD (Machine Model=C)
>400
V
ESD (Human Body Model=3B)
>8000
V
Operating Junction Temperature (Note 2)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.
Thermal Characteristics
Parameter
Maximum Thermal Resistance
Symbol
Condition
RθJC
Junction to Case
RθJA
Junction to Ambient
Jul. 2008 Rev. 1. 1
Value
TO-220-3
2.2
TO-220F-3
4.5
TO-220-3
60
Unit
oC/W
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Electrical Characteristics (Each Diode Leg)
Parameter
Condition
Symbol
IF=10 A, TC=25oC
Maximum Instantaneous Forward IF=10 A, TC=125oC
Voltage Drop (Note 3)
IF=20 A, TC=25oC
VF
IF=20 A, TC=125oC
Maximum Instantaneous Reverse
Current (Note 3)
Rated DC Voltage, TC=125oC
Rated DC Voltage, TC=25oC
Typ
Max
0.59
0.65
0.50
0.57
0.71
0.84
0.67
0.72
5
15
0.01
0.1
IR
Unit
V
mA
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Typical Performance Characteristics
IF, Instantaneous Forward Current (A)
100
10
1
o
25 C
o
125 C
o
150 C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage
10
1
IR, Reverse Current (mA)
0.1
0.01
1E-3
o
25 C
o
100 C
o
125 C
o
150 C
1E-4
1E-5
1E-6
1E-7
0
10
20
30
40
50
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Typical Performance Characteristics (Continued)
1000
Capacitance (pF)
800
600
o
TJ=25 C
400
200
0
0
10
20
30
40
VR, Reverse Voltage (V)
Figure 6. Capacitance
IF(AV), Average Foward Current (A)
14
12
10
8
6
Square
4
2
0
100
110
120
130
140
150
160
o
Case Temperature ( C)
Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode)
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Mechanical Dimensions
TO-220-3
2.580(0.102)
3.380(0.133)
0.550(0.022)
1.350(0.053)
1.160(0.046)
1.760(0.069)
14.230(0.560)
16.510(0.650)
φ1.500(0.059)
27.880(1.098)
30.280(1.192)
8.520(0.335)
9.520(0.375)
1.850(0.073)
9.660(0.380)
10.660(0.420)
φ3.560(0.140)
4.060(0.160)
Unit: mm(inch)
3°
0.200(0.008)
7°
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
7°
0.381(0.015)
60°
0.813(0.032)
8.763(0.345)
60°
0.381(0.015)
2.540(0.100)
2.540(0.100)
Jul. 2008 Rev. 1. 1
0.356(0.014)
0.406(0.016)
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR2045C
Mechanical Dimensions (Continued)
TO-220F-3
Unit: mm(inch)
9.800(0.385)
10.200(0.401)
φ
4.400(0.173)
4.700(0.185)
3.100(0.122)
3.300(0.130)
2.700(0.106)
3.000(0.118)
3.400(0.134)
3.600(0.142)
7.000(0.275)
7.400(0.291)
15.800(0.621)
16.200(0.637)
2.700(0.106)
3.100(0.122)
2.000(0.079)
2.800(0.110)
13.000(0.511)
13.600(0.535)
1.200(0.047)
0.900(0.035)
1.200(0.047)
1
1.500(0.059)
2
3
0.650(0.026)
0.600(0.024)
0.800(0.031)
0.850(0.033)
2.550(0.100)
2.550(0.100)
Jul. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
8
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