Vishay MBR3045WT-N3 Schottky rectifier, 2 x 15 a Datasheet

VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
FEATURES
Base
common
cathode
2
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
1
3
Anode
Anode
2
1
2
Common
cathode
TO-247AC
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
TO-247AC
IF(AV)
2 x 15 A
VR
35 V, 45 V
VF at IF
See Electrical table
IRM max.
100 mA at 125 °C
DESCRIPTION
TJ max.
150 °C
Diode variation
Common cathode
EAS
See Electrical table
The VS-MBR30..WT... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
VALUES
IF(AV)
Rectangular waveform (per device)
30
IFRM
TC = 125 °C (per leg)
30
VRRM
IFSM
tp = 5 μs sine
VF
20 Apk, TJ = 125 °C
TJ
Range
UNITS
A
35/45
V
1020
A
0.60
V
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
Maximum working peak
reverse voltage
SYMBOL VS-MBR3035WTPbF VS-MBR3035WT-N3 VS-MBR3045WTPbF VS-MBR3045WT-N3 UNITS
VR
35
35
45
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
SYMBOL
per leg
per device
Peak repetitive forward current per leg
TEST CONDITIONS
TC = 125 °C, rated VR
IFRM
Rated VR, square wave, 20 kHz TC = 125 °C
Peak repetitive reverse surge current
Revision: 30-Aug-11
IFSM
IRRM
UNITS
15
IF(AV)
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
VALUES
30
Following any rated load
condition and with rated
VRRM applied
30
1020
Surge applied at rated load conditions half wave,
single phase, 60 Hz
200
2.0 µs 1.0 kHz
2.0
A
Document Number: 94293
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
30 A
VFM (1)
Maximum forward voltage drop
20 A
TJ = 125 °C
30 A
Maximum instantaneous reverse current
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
Rated DC voltage
TJ = 125 °C
TJ = TJ maximum
VALUES
UNITS
0.76
0.60
V
0.72
1.0
100
mA
0.29
V
13.8
m
Forward slope resistance
rT
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
800
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
7.5
nH
10 000
V/µs
VALUES
UNITS
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
- 65 to 150
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
1.40
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.24
°C/W
6
g
0.21
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Approximate weight
Mounting torque
Marking device
Revision: 30-Aug-11
°C
Case style TO-247AC (JEDEC)
MBR3035WT
MBR3045WT
Document Number: 94293
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
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Vishay Semiconductors
1000
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
TJ = 50 °C
0.1
TJ = 25 °C
0.01
0.001
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
5
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
1
PDM
t1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 30-Aug-11
Document Number: 94293
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
Vishay Semiconductors
16
150
140
DC
130
Square wave (D = 0.50)
VR applied
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
14
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
12
10
8
RMS limit
6
4
DC
2
See note (1)
100
0
4
0
8
12
16
20
24
0
4
8
12
16
20
24
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
IFSM - Non-Repetitive
Surge Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
(Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 30-Aug-11
Document Number: 94293
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
30
45
WT
PbF
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
Current rating (30 = 30 A)
4
-
Voltage ratings
5
-
Circuit configuration:
35 = 35 V
45 = 45 V
Center tap (dual) TO-247
-
6
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-MBR3035WTPbF
25
500
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-MBR3035WT-N3
25
500
Antistatic plastic tube
VS-MBR3045WTPbF
25
500
Antistatic plastic tube
VS-MBR3045WT-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 30-Aug-11
www.vishay.com/doc?95223
TO-247AC PbF
www.vishay.com/doc?95226
TO-247AC -N3
www.vishay.com/doc?95007
Document Number: 94293
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12
1
Document Number: 91000
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