Vishay MBR40H45CT-E3/45 Dual common-cathode schottky rectifier Datasheet

New Product
MBR40H35CT thru MBR40H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifiers
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses, high efficiency
TO-220AB
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
1
2
• Solder dip 260 °C, 40 s
3
PIN 1
PIN 2
PIN 3
CASE
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
20 A x 2
VRRM
35 V to 60 V
MECHANICAL DATA
IFSM
350 A, 320 A
Case: TO-220AB
VF at IF = 20 A
0.55 V, 0.60 V
Epoxy meets UL 94V-0 flammability rating
IR
100 µA
TJ max.
175 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current (Fig. 1)
total device
per diode
SYMBOL
MBR40H35CT
MBR40H45CT
MBR40H50CT
MBR40H60CT
UNIT
VRRM
35
45
50
60
V
40
20
IF(AV)
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed on per diode
rated load
IFSM
Peak repetitive reverse current per diode
at tp = 2 µs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge
energy (8/20 µs waveform)
per diode
ERSM
20
mJ
Non-repetitive avalanche energy
at 25 °C, IAS = 3.0 A, L = 5 mH
per diode
EAS
22.5
mJ
dV/dt
10 000
V/µs
TJ, TSTG
- 65 to + 175
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Document Number: 88920
Revision: 19-May-08
350
320
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
A
www.vishay.com
1
New Product
MBR40H35CT thru MBR40H60CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 20 A
IF = 20 A
IF = 40 A
IF = 40 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
Maximum instantaneous
reverse current per diode (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
Typical junction
capacitance
4.0 V, 1 MHz per diode
0.64
0.55
0.76
0.70
0.68
0.60
0.83
0.73
V
100
15
CJ
µA
mA
1200
920
pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT
Thermal resistance, junction to case per diode
1.8
RθJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
MBR40H45CT-E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.58
45
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
400
Peak Forward Surge Current (A)
Average Forward Current (A)
50
40
30
20
10
MBR40H35CT - MBR40H45CT
MBR40H50CT - MBR40H60CT
350
300
250
200
150
100
MBR40H35CT - MBR40H45CT
MBR40H50CT - MBR40H60CT
50
0
0
25
50
75
100
125
150
175
200
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Derating Curve Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88920
Revision: 19-May-08
New Product
MBR40H35CT thru MBR40H60CT
Vishay General Semiconductor
10 000
MBR40H35CT - MBR40H45CT
MBR40H50CT - MBR40H60CT
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 125 °C
1
TJ = 25 °C
0.1
1000
MBR40H35CT - MBR40H45CT
MBR40H50CT - MBR40H60CT
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
0.9
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
100 000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
1 000 000
TJ = 175 °C
10 000
TJ = 125 °C
1000
100
MBR40H35CT - MBR40H45CT
MBR40H50CT - MBR40H60CT
10
TJ = 25 °C
1
0.1
20
30
40
50
60
70
80
90
1
MBR40H35CT - MBR40H45CT
MBR40H50CT - MBR40H60CT
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
TYP.
0.185 (4.70)
0.169 (4.30)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.055 (1.40)
0.049 (1.25)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.331 (8.40)
TYP.
0.638 (16.20)
0.598 (15.20)
0.634 (16.10)
0.618 (15.70)
PIN
1 2 3
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.118 (3.00)
TYP.
0.523 (13.28)
0.507 (12.88)
0.102 (2.60)
0.087 (2.20)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
Document Number: 88920
Revision: 19-May-08
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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