Naina MBR6035 Schottky power diode, 60a Datasheet

MBR6020 thru
MBR6040R
Naina Semiconductor Ltd.
Schottky Power Diode, 60A
Features
•
•
•
•
•
Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Test
Conditions
Parameter
Symbol
MBR6020(R)
MBR6030(R)
MBR6035(R)
MBR6040(R)
Units
Repetitive peak reverse voltage
VRRM
20
30
35
40
V
RMS reverse voltage
VRMS
14
21
25
28
V
VDC
20
30
35
40
V
TC ≤ 100 C
IF
60
60
60
60
A
TC = 25oC
IFSM
700
700
700
700
A
VF
0.65
0.65
0.65
0.65
V
5
5
5
5
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
o
IF = 60 A
TJ = 25oC
VR = 20V,
TJ = 25oC
VR = 20V,
TJ = 125oC
Forward voltage
Reverse current
IR
mA
150
150
150
150
MBR6030(R)
MBR6035(R)
MBR6040(R)
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to
case
Operating junction temperature range
Storage temperature
MBR6020(R)
Units
o
Rth(JC)
1.0
TJ
Tstg
-65 to 150
-65 to 175
Mounting torque (non-lubricated threads)
F
4.0
Nm
Approximate allowable weight
W
17.0
g
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
C/W
o
C
C
o
Naina Semiconductor Ltd.
MBR6020 thru
MBR6040R
Package Outline
ALL DIMENSIONS IN MM
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Similar pages