MBRB735 THRU MBRB760 SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts FEATURES TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.245 (6.22) MIN 0.055 (1.40) K 0.320 (8.13) 0.575 (14.60) 0.360 (9.14) 1 SEATING PLATE K 0.047 (1.19) 0.055 (1.40) 0.625 (15.88) 2 0.090 (2.29) 0.110 (2.79) -T- Forward Current - 7.5 Amperes ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed 0.018 (0.46) 0.095 (2.41) MECHANICAL DATA 0.025 (0.64) 0.100 (2.54) 0.080 (2.03) 0.027 (0.686) 0.110 (2.79) 0.037 (0.940) PIN 1 K - HEATSINK PIN 2 Case: JEDEC TO-263AB molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08 ounces, 2.24 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBRB735 MBRB745 MBRB750 MBRB760 UNITS Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts Maximum working peak reverse voltage VRWM 35 45 50 60 Volts Maximum DC blocking voltage VDC 35 45 50 60 Volts Maximum average forward rectified current (SEE FIG 1) I(AV) 7.5 Amps Peak repetitive forward current (square wave, 20 KHZ) at TC=105°C IFRM 15.0 Amps Peak forward surge current, 8.3ms single half sinewave superimposed on rated load (JEDEC Method) IFSM 150.0 Amps Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps VF 0.57 0.84 0.72 0.75 0.65 - Volts IR 0.1 15.0 0.5 50.0 mA Voltage rate of change (rated VR) dv/dt 10,000 1,000 V/µs Maximum thermal resistance, (NOTE 3) RΘJC 3.0 °C/W Operating junction temperature range TJ -65 to +150 °C TSTG -65 to +175 °C Maximum instantaneous forward voltage at (NOTE 2) IF=7.5A, TC=25°C IF=7.5A, TC=125°C IF=15A, TC=25°C IF=15A, TC=125°C Maximum instantaneous reverse current at rated DC blocking voltage TC=25°C TC=125°C (NOTE 1) Storage temperature range NOTES: (1) 2.0µs, pulse width, f=1.0 KHZ (2) Pulse test: 300µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case 4/98 RATINGS AND CHARACTERISTIC CURVES MBRB735 THRU MBRB760 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1 - FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 8 6 4 2 MBR735 - MBR745 MBR750 & MBR760 0 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 150 125 100 75 50 25 150 100 50 0 175 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES 10 100 10 1 NUMBER OF CYCLES AT 60 HZ CASE TEMPERATURE, °C FIG. 4 - TYPICAL REVERSE CHARACTERISTICS FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 MBRB735 - MBRB745 MBRB750 & MBBR760 50 10 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES TJ=125°C 10 PULSE WIDTH = 300µs TJ=25°C 1 MBRB735 - MBRB745 MBRB750 & MBBR760 0.1 0.01 0.1 TJ=75°C 0.01 TJ=25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TRANSIENT THERMAL IMPEDANCE, °C/W TJ=25°C f=1.0 MHz Vsig=50mVp-p 1,000 100 MBRB735 - MBRB745 MBRB750 & MBBR760 1 10 REVERSE VOLTAGE, VOLTS 60 80 100 FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 - TYPICAL JUNCTION CAPACITANCE 40 0.1 40 20 PERCENT OF RATED PEAK REVERSE VOLTAGE, % 4,000 JUNCTION CAPACITANCE, pF TJ=125°C 1 100 100 10 1 0.1 0.01 0.1 1 t, PULSE DURATION, sec. 10 100