ON MBRD1045T4G Switchmode schottky power rectifier Datasheet

MBRB1045G,
MBRD1045G,
SBRB1045G,
SBRD81045T4G
Preferred Device
SWITCHMODE
Schottky Power Rectifier
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Surface Mount Power Package
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
1
4
3
Features








Guardring for Stress Protection
Low Forward Voltage
175C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
AEC−Q101 Qualified and PPAP Capable
SBRB and SBRD8 Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
 Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
 Weight: 1.7 grams for D2PAK (approximately)




0.4 grams for DPAK (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
 Machine Model = C (> 400 V)
 Human Body Model = 3B (> 8000 V)
MARKING DIAGRAM
4
AY WW
MBRB1045G
AKA
1
3
D2PAK
CASE 418B
A
Y
WW
MBRB1045
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
4
1 2
3
DPAK
CASE 369C
Y
WW
B1045
G
MARKING DIAGRAM
YWW
B10
45G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1
Publication Order Number:
MBRB1045/D
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
45
V
Average Rectified Forward Current (Rated VR) TC = 135C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 135C
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
(MBRB/SBRB)
70
(MBRD/SBRD)
TJ, Tstg
−65 to +175
C
dv/dt
10000
V/ms
Operating Junction and Storage Temperature Range (Note 1)
Voltage Rate of Change (Rated VR)
A
20
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
(MBRB1045G)
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
(MBRD1045G)
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
Value
Unit
C/W
RqJC
RqJA
1.0
50
RqJC
RqJA
2.43
68
Symbol
Value
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 10 Amps, TJ = 125C)
(IF = 20 Amps, TJ = 125C)
(IF = 20 Amps, TJ = 25C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 125C)
(Rated dc Voltage, TJ = 25C)
IR
Unit
V
0.57
0.72
0.84
mA
15
0.1
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%
ORDERING INFORMATION
Package
Shipping†
MBRB1045G
D2PAK
(Pb−Free)
50 Units / Rail
SBRB1045G
D2PAK
(Pb−Free)
50 Units / Rail
MBRB1045T4G
D2PAK
(Pb−Free)
800 Units / Tape & Reel
SBRB1045T4G
D2PAK
(Pb−Free)
800 Units / Tape & Reel
MBRD1045G
DPAK
(Pb−Free)
50 Units / Rail
MBRD1045T4G
DPAK
(Pb−Free)
2,500 Units / Tape & Reel
SBRD81045T4G
DPAK
(Pb−Free)
2,500 Units / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
100
100
TJ = 150C
TJ = 150C
70
100C
50
25C
100C
50
25C
30
30
20
20
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
70
10
7.0
5.0
3.0
2.0
1.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.7
0.5
0.5
0.3
0.3
0.2
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1.2
1.0
1.4
0.2
0.4
0.6
0.8
1.2
1.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
100
100
IR , REVERSE CURRENT (mA)
TJ = 150C
IR , REVERSE CURRENT (mA)
1.4
125C
10
100C
1.0
75C
0.1
25C
150C
10
125C
1.0
100C
75C
0.1
0.01
0.01
25C
0.001
0.001
0
5.0
10
15
20
25
30
35
40
45
0
50
5.0
10
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
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3
45
50
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
1400
C, CAPACITANCE (pF)
1200
100
70
50
30
800
600
400
200
0
20
1.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
1000
2.0
3.0
5.0 7.0 10
20
30
50
0
70 100
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Maximum Surge Capability
Figure 5. Typical Capacitance
18
RATED VOLTAGE APPLIED
16
14
dc
12
SQUARE
WAVE
10
8.0
6.0
4.0
2.0
0
130
20
10
NUMBER OF CYCLES AT 60 Hz
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
IFSM , PEAK HALF-WAVE CURRENT (AMPS)
200
135
140
145
150
155
TC, CASE TEMPERATURE (C)
50
10
9.0
dc
8.0
7.0
SQUARE
WAVE
6.0
5.0
4.0
3.0
2.0
1.0
0
0
Figure 6. Current Derating, Case,
RqJC = 1.0 C/W
2.0
4.0
6.0
8.0
10
12
14
16
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
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4
18
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
3
A
S
−T−
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
K
J
G
D 3 PL
0.13 (0.005)
W
H
M
T B
M
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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MBRB1045/D
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