Vishay MBRD320PBF Schottky rectifier, 3.0 a Datasheet

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
FEATURES
Base
cathode
4, 2
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
1
Anode
D-PAK (TO-252AA)
• High frequency operation
3
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
IF(AV)
3.0 A
VR
20 V, 30 V, 40 V
VF at IF
0.49 V
IRM
20 mA at 125 °C
TJ max.
150 °C
Diode variation
Single die
EAS
8 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VALUES
UNITS
Rectangular waveform
VRRM
3.0
A
20 to 40
V
IFSM
tp = 5 μs sine
490
A
VF
3 Apk, TJ = 125 °C
0.49
V
- 40 to 150
°C
TJ
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-MBRD320PbF
VS-MBRD330PbF
VS-MBRD340PbF
UNITS
20
30
40
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, L = 16 mH
8.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
Repetitive avalanche current
Document Number: 94313
Revision: 14-Jan-11
50 % duty cycle at TL = 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
3.0
490
A
75
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VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
3A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
Maximum reverse leakage current
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TYP.
MAX.
0.48
0.6
0.58
0.7
0.41
0.49
0.55
0.625
0.02
0.2
10.7
20
UNITS
V
mA
Typical junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
189
-
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
5.0
-
nH
-
10 000
V/μs
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum junction temperature range
TJ (1)
- 40 to 150
Maximum storage temperature range
TStg
- 40 to 175
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
See fig. 4
UNITS
°C
6.0
°C/W
80
0.3
Approximate weight
g
0.01
oz.
MBRD320
Marking device
Case style D-PAK (similar to TO-252AA)
MBRD330
MBRD340
Note
(1)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94313
Revision: 14-Jan-11
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
100
Vishay Semiconductors
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 150 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
Schottky Rectifier, 3.0 A
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
5
10
15
20
25
30
35
40
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
PDM
1
t1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94313
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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3
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A
2.5
160
Average Power Loss (W)
Allowable Case Temperature (°C)
Vishay Semiconductors
150
DC
140
130
120
Square wave (D = 0.50)
80 % rated VR applied
110
See note (1)
RMS limit
2.0
DC
1.5
1.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.5
0
100
1
0
2
3
4
0
5
1
2
3
4
5
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
100
At any rated load condition
and with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94313
Revision: 14-Jan-11
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
D
3
40
TR
PbF
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
D = TO-252AA (D-PAK)
4
-
Current rating (3 = 3 A)
5
-
Voltage ratings
6
-
None = Tube (50 pieces)
20 = 20 V
30 = 30 V
40 = 40 V
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
7
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95059
Packaging information
www.vishay.com/doc?95033
Document Number: 94313
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
3
(2) L5
2
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
2x e
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
MILLIMETERS
MIN.
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
SYMBOL
0.265
MIN.
(6.74)
E1
INCHES
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.020 BSC
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
Document Number: 95016
Revision: 04-Nov-08
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
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Disclaimer
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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