Z ibo Seno Electronic Engineering Co., Ltd. MBRX 120 – MBRX 1100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! ! A Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency H Surge Overload Rating to 2 0A Peak For Use in Low Voltage Application C E Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O Mechanical Data ! ! ! ! ! ! J Case: SOD-123, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.01 grams (approx.) Lead Free: For RoHS / Lead Free Version D E Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 75°C G Max 3.90 2.85 1.70 1.35 0.78 0.55 0.13 G H 0.05 0.15 J All Dimensions in mm Maximum Ratings and Electrical Characteristics Characteristic SOD-123 Min 3.65 2.55 1.40 1.25 0.68 0.25 0.18 Dim A B C D @TA=25°C unless otherwise specified MBRX 130 MBRX 140 MBRX 150 MBRX 160 MBRX 180 MBRX 1100 20 30 40 50 60 80 100 V 14 21 28 35 42 56 70 V Symbol MBRX 120 VRRM VRWM VR VR(RMS) Unit IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 20 A Forward Voltage @IF = 0.5A VFM @TA = 25°C @TA = 100°C IRM 0.5 20 mA RJL RJA 28 88 °C/W Typical Junction Capacitance Cj 30 pF Operating Temperature Range Tj -55 to +125 °C TSTG -55 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Storage Temperature Range 0.55 0.70 0.85 V Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area. MBRX 120 – MBRX 1100 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) MBRX 120 – MBRX 1100 1.0 0 25 50 100 75 125 150 80 - 100 0.1 Tj - 25ºC IF Pulse Width = 300 µs 0.01 1.2 1000 Single Half-Sine-Wave (JEDEC Method) Tj = 25°C f = 1 MHz Tj = 100°C 40 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.8 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics Fig. 1 Forward Current Derating Curve 30 20 10 0 0.4 0 TL , LEAD TEMPERATURE (ºC) 50 50 - 60 20 - 40 1.0 100 10 1 10 100 0.1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1 100 10 Tj = 100ºC 1.0 Tj = 75ºC 0.1 0.01 Tj = 25ºC 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics MBRX 120 – MBRX 1100 2 of 2 www.senocn.com Alldatasheet