MOTOROLA Freescale Semiconductor, Inc. Order Number: MC33486/D Rev. 3.3, 06/2001 Semiconductor Technical Data Advance Information Freescale Semiconductor, Inc... Dual High Side Switch for H-Bridge Automotive Applications This device is a dual high side switch for automotive applications which incorporates a dual low side switch control feature. This device is designed to monitor two low side switches for typical DC-motor control in an H-Bridge configuration. It can be directly interfaced with a microcontroller for control and diagnostic functions, is PWM capable and has a self-adjusted switching speed for minimizing electromagnetic emission. The High Side block incorporates two 15mΩ Rdson N-Channel power Mosfets with senses and a control circuitry. Each output of this high side block is protected against short to gnd and load shorts, and has over temperature detection with hysteresis. It includes a current recopy feature for monitoring the load current. The control circuitry also has an overvoltage detector which turns off the bridge and protects the load in case of Vbat exceeding 28V. The low side control block is able to drive 2 low sides switches in a H-bridge configuration and protects them in case of short circuit. This, in combination with the High side protection, fully protects the H-bridge from shorted loads, shorts to Vbat and shorts to GND. This device offers a very low quiescent current in standby mode. •10 Amps Nominal DC Current •35 Amps Maximum Peak Current •DC Voltage from -0.3V to 40V •Operating Voltage from 8 to 28V •Overvoltage Detection : Switch Off when Vbat Exceed 28V •High Side and Low Side Overcurrent protection •Operating Junction Temperature - 40°C to 150°C •Rdson 15mΩ max at 25C° per Mosfet •DC to 30kHz PWM Capability •Standby Mode with Low Standby Current •Junction to Case Thermal Resistance : 2°C/W •ESD protection 2kV •Current Recopy to Monitor the High-Side Current •Common diagnostic output MC33486 DUAL HIGH SIDE SWITCH FOR H-BRIDGE AUTOMOTIVE APPLICATIONS SEMICONDUCTOR TECHNICAL DATA DH SUFFIX HSOP20 Package CASE 979-04 D2PAK D2PAK PIN ASSIGNMENT Vbat 21 20 Wake Gnd 1 Cur R 19 St 2 18 IN2 IN1 3 GLS1 4 17 GLS2 OUT1 5 16 OUT2 OUT1 6 15 OUT2 OUT1 7 14 OUT2 OUT1 8 13 OUT2 12 NC NC 9 NC 10 21 11 NC Vbat Simplified Block Diagram and Typical Application 5V 5V High Side Block MCU I/O St IN1 IN2 WAKE VBAT Control Cur R GND GLS1 OUT1 GLS2 OUT2 M GND GND Low Side Block This document contains information on a new product. Specifications and information herein are subject to change without notice. © Motorola, Inc., 2001. All rights reserved. For More Information On This Product, Go to: www.freescale.com TM MC33486 Freescale Semiconductor, Inc. PINS FUNCTION DESCRIPTION Pin No. TAB Description Vbat Supply Voltage The backside TAB is connected to the power supply of the MC33486DH. In addition to its supply function, the tab contributes to the thermal behaviour of the device by conducting the heat from the switching MOSFET to the printed circuit board. OUT1 OUTPUT Channel 1 OUT 2 OUTPUT Channel 2 Pins 5, 6,7,8 are the source of the output1 15mOhm High-side MOSFET1. Pins 13,14,15 are source of the output 2 15mOhm High-side MOSFET2. They are respectively controlled via the IN1 and IN2 pins. These outputs are current limited and thermally protected IN 1 INPUT Channel 1 IN 2 INPUT Channel 2 These are the device input pins which directly control their associated outputs. The levels are CMOS compatible. When the input is a logic low, the associated output is low (High Side OFF and Low Side ON). Each input pin has an internal active pull down, so that it will not float if disconnected. 19 St Status for both Channels The Status output is an open drain indication that goes active low when a fault mode (Short to gnd/Vbat, Overtemp) is detected by the device on either one channel or both simultaneously. Its internal structure is an open drain architecture with an internal clamp at 6V. An external pull up resistor connected to Vdd (5V) is needed. See Functional Truth Table. 4 17 GLS1 GLS2 These pins have to be connected to the gate of each Low Side. When the input (INx) is logic High, the associated GLS is grounded to turn off the external FET . 20 Wake This pin is a digital input . When Wake is a logic low, the device’s bias current draw is at a minimum. If Wake is a logic high, the part is operationnal. Wake pin has a pull down resistor. 2 Cur R Load Current Sense The Current Sense pin deliver a ratioed amount (1/3700) of the sum of the High Side currents that can be used to generate signal ground referenced output voltages for use by the microcontroller. NC Not Connected These pins are not used. GND GROUND This is the Ground pin of the device. 5,6,7,8 13,14,15,16 3 18 Freescale Semiconductor, Inc... Name/Function 9, 10, 11, 12, 1 For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 2 MC33486 Freescale Semiconductor, Inc. MAXIMUM RATINGS Parameter Symbol Value Unit Power Supply Voltage : Continuous/ Pulse Vbat - 0.3 to + 40 V Out1, Out2 to Vbat voltage : Continuous/ Pulse Vout - 0.3 to + 40 V IN1, IN2, Wake, ST Input DC voltage : Continuous/ Pulse Vin -0.3 to + 7 V IN1, IN2, Wake Input Current Iin +/- 5 mA Vesd1 Vesd2 +/-2000 +/-200 V V Output DC Output Current, 1 Channel ON, Ta=85°C (note4) Ioudc 10 A Output Current : Pulse (Note 3) Ioutp 35 A Junction Temperature Tj - 40 to +150 °C Storage Temperature Range Tst - 65 to +150 °C Thermal resistance junction to case Rthjc 2 °C/W Thermal resistance junction to ambient (Note 4) Rthja 25 °C/W Pd 5 W ESD all Pins Human Body Model (note1) Machine Model (note2) Freescale Semiconductor, Inc... THERMAL RATINGS Power dissipation at Tcase 140°C (Note 5) NOTES : 1. ESD1 testing is performed in accordance with the Human Body Model (Czap = 100pF, Rzap = 1500Ω) 2. ESD2 testing is performed in accordance with the Machine Model (Czap = 100pF, Rzap = 0Ω) 3. During load in rush current. 4. Device mounted on dual side printed circuit board with 70µm copper thickness and 10cm2 copper heat sink (2.5 cm2 on top side and 7.5 cm2 on down side). 5. Assuming a 150°C maximum junction temperature. ELECTRICAL CHARACTERISTICS High Side Block Tj from - 40°C to +150°C, Vbat from 9V to 16V, unless otherwise noted.Typical values reflect approximate mean at 25°C, nominal Vbat, at time of device characterization. Characteristics Description Symbol Unit Min. Typ. Conditions Max. SUPPLY CHARACTERISTICS Nominal Operating Voltage Vbat Standby Current Istdby 8 28 V Functional to truth table until overvoltage threshold 10 µA Vbat < 13.5V, wake=0, IN1=IN2=0 15 mA No PWM, IN1or IN2=5V, Wake=5V mA PWM=20kHz, d=50% Supply Current in Operation Mode Ion 9 Supply Current in Operation Mode Itbd 15 High Side Drain to Source On Resistance Rdson 12 15 mΩ Iout =5A, Tj = 25°C High Side Drain to Source On Resistance Rdson 21 30 mΩ Iout = 5A, Vbat > 9V & Tj = 150°C STATIC OUTPUT CHARACTERISTICS High Side Body Diode Voltage (Out to Vbat) Vbd 0.7 V @ Iout=-5A, Tj = 150°C Low Side Gate output Voltage Vgs 14 V Internally clamped For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 3 MC33486 Freescale Semiconductor, Inc. Characteristics Description Symbol Unit Min. Typ. Conditions Max. INPUTS CHARACTERISTICS IN1, IN2, Wake Input low levels Vil 1.5 Input high levels Vih 3.5 Input Hysteresis Vhyst 0.2 Logic Input Current Iin 1 Logic Input Current Iin Status Voltage Status Leakage V V 0.6 1 V IN1 and IN2 pins only µA Vin = 1.5V 50 µA Vin = 3.5V Vst 0.5 V Ist=1mA, output in fault Istlk 10 µA Vst=5V 35 50 A 3 20 µs From short to output shutdown 2 3 V If the low side is ON (GLS>4.3V). This is a inferred overcurrent condition 3 10 µs Freescale Semiconductor, Inc... STATUS CHARACTERISTICS OVERLOAD PROTECTION CHARACTERISTICS High Side Output Current Shutdown Ilim High Side Overcurrent Shutdown Delay tIlim Low Side Overcurrent detection Vout to gnd Vout- 20 1 fault Low Side Overcurrent detection Vout to gnd Shutdown Delay tout-fault 150 175 °C 10 °C Thermal Shutdown Tshut Thermal Shutdown Hysteresis Thyst Under Voltage Shutdown Threshold Vuv Under Voltage Shutdown hysteresis Vuv-hyst Over Voltage Shutdown Threshold Vov Over Voltage Shutdown hysteresis Vov-hyst 0.15 Cr 3700 6 8 0.15 27 29 V V 31 V V CURRENT RECOPY CHARACTERISTICS Current Recopy Ratio Iout from 4A to 8A Tj -40°C to 105°C Current Recopy Ratio Accuracy Iout from 4A to 8A Iout from 8A to 20A Cr-ac -15 -10 Current Recopy Clamp Voltage Vclst 6 TBC High Speed Mode to Low Speed Mode transition pulse width tsmod 150 Gate Low Side Rise Time Tpsrls 3.6 µs From 10% to 90% Vout, Load=3Ω Gate Low Side Fall Time Tnsrls 4.9 µs From 90% to 10% Vout, Load=3Ω 15 10 % Tj <125°C Garanteed by design 9 11 TBC V Current mirror=10mA No external resistor on Cur R pin. 250 350 µs SWITCHING CHARACTERISTICS HIGH SPEED MODE SWITCHING CHARACTERISTICS (pulse<280µs) For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 4 MC33486 Freescale Semiconductor, Inc. Characteristics Description Symbol Min. Typ. Unit Conditions Max. High Side Positive Slew Rate Thr 10 V/µs From 10% to 65% Vout, Load=3Ω High Side Negative Slew Rate Thf 40 V/µs From 90% to 35% Vout, Load=3Ω High Side Turn on Delay Time thdon 2.5 µs To 10% Vout, Load=3Ω High Side Turn off Delay Time thdoff 1.5 µs To 90% Vout, Load=3Ω Freescale Semiconductor, Inc... LOW SPEED MODE SWITCHING CHARACTERISTICS High Side Maximum Output Positive Slew Rate lr 1.0 V/µs From 10% to 65% Vout, Load=3Ω High Side Maximum Output Negative Slew Rate Tlf 0.5 V/µs From 90% to 35% Vout, Load=3Ω High Side Turn on Delay TIme tldon 10 µs To 10% Vout, Load=3Ω High Side Turn off Delay Time tloff 80 µs To 90% Vout, Load=3Ω FUNCTIONAL TRUTH TABLE Standard HBridge Conditions In1 In 2 Wake Out1 Out2 GLS1 GLS2 St Comment X X 0 Z Z L L 1 Standby Mode 0 0 1 L L H H 1 Brake to Ground 1 0 1 H L L H 1 Direction 1 0 1 1 L H H L 1 Direction 2 1 1 1 H H L L 1 Not Recommended Note 1 Undervoltage X X 1 Z Z L L 1 Note 2 Overvoltage X X 1 L L H H 1 Note 2 Overtemp HS1 H L 1 L L L L 0 Note 3 Overtemp HS2 L H 1 L L L L 0 Note 3 Overcurrent HS1 1 X 1 Z X L X 0 Note 4 Overcurrent HS2 X 1 1 X Z X L 0 Note 4 Overcurrent LS1 X X 1 Z Z L L 0 Note 5 Overcurrent LS2 X X 1 Z Z L L 0 Note 5 Normal Operation L = ‘Low level’ ; H = ‘High level’ ; X = ‘don’t care’ ; Z = ‘High Impedance’ NOTES : 1. It is not recommended to short the motor to Vbat. If in this mode an overvoltage condition occured, this would damaged the DHSB. 2.Once the overvoltage condition or undervoltage condition is removed, the H-Bridge recovers its normal operation mode. 3.When the thermal shutdown is reached on one of the High Side MOSFET, both half bridges are turned off with the motor tied to ground. When the overtemperature condition is finished, the H-bridge recover it previous normal operation mode. 4. The High Side MOSFET HSx which experienced an overcurrent is latched off.The corresponding output OUTx is open. Once the High Side overcurrent condition is removed, the input INx has to to be reset in order to recover the normal operation mode. 5. When a short to Vbat of one of the Low sides occurs, both outputs are opened to prevent the motor from running. Once the Low side overcurrent is removed, the input INx of the half bridge wich experienced the fault has to be reset in order to recover the normal operation mode. For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 5 Freescale Semiconductor, Inc... MC33486 Freescale Semiconductor, Inc. DEVICE DESCRIPTION Introduction DHSB goes back into normal operation mode as soon as the These devices are intended for full H-bridge automotive Vbat rise above the undervoltage threshold. The undervoltage applications. The bridge is partitioned into three blocks, the protection circuitry has hysteresis. DHSB and two low side MOSFETS, each block has a The control circuitry also has an overvoltage detection dedicated package. which turns the Low sides ON and protects the load in case of The DHSB incorporates two 15m ohm N-channel high Vbat exceeding 28V.The gate drivers will also be clamped to side power MOSFETS, high side current sensing , fault 14V to protect the external low side FETs. The Low sides protection and low side gate drivers.The inputs are CMOS remain in the ON state, until the over-voltage condition is compatible, so they can directly interface with a removed. microncontroller. The low side gate drivers control and protect Undervoltage and Overvoltage are not reported on the the two external low sides. When the three blocks are status output. combined the outputs (OUT1 and OUT2) are fully protected against shorts to GND, Shorts to Vbat, shorted loads, over/ Self-adjusted switching speed mode under voltage and over temperature. This feature allows for reduction in EMC and power dissipation depending on the application.The DHSB has two Power supply switching speeds (high and low) depending on the input pulse The device can be directly connected to the power supply width. The high speed condition is active when the delay line. The device has a standby mode (Wake at low logic level) between two consecutive input edges is below 280us. The with a ultra low consumption (10uA max). In operation when low speed mode is active when the delay between two inputs are active, the supply current is up to 20mA. consecutive input edges is above 280us. The 280us delay With the high current and fast switching ability of the corresponds about to a 2kHz frequency with a duty cycle of DHSB it is recommended that sufficient capacitance (tens of 50%. microfarads) be placed between Vbat and gnd of the IC. This will help to insure the power supply stays within the specified limits. Current Recopy This feature provides a current mirror with the ratio of 1/ Reverse battery protection. 3700 of the high side output current. An external resistor must The device cannot sustain more than 1.5V of a reverse be connected to the Cur R pin and then tied to a battery conditions because of the two body diodes of the microcontroller A/D input for analog voltage measurement. power MOSFETs, which are forward biased during a reverse The Cur R pin is internally clamped (Vclst) to protect the MCU battery condition. A specific protection must be implemented. A/D input. Figure 1. i Reverse Battery protection schematic Figure 2. Current Recopy Principle. Sense Vbat Power C 1 MC33486 5000 I copy I load gnd + M1 A - To A/D M Cur R External resistor A reverse battery component might be needed in the gnd pin of the application (i.e diode or Mosfet) in order to achieve both reverse battery and negative transient pulses immunity. If a polarized capacitor is used, it can be placed as shown in Figure 1. . Loss of ground protection As shown in the Figure 1. , a loss of ground has no bad impact on the DHSB, since the ground pin of the device is the same as the ground of the low side. Over/Under Voltage Protection If the battery voltage falls to a level below 8.0V, the outputs are turned low (Low Sides ON) in a low speed mode. The MC33486 gnd R Logic gnd In case a ground shift occurs between the MCU and the DHSB, the amplifier A (see Figure 2. ), will adapt its output to keep the same I copy. Of course the shift has to keep between +/- 1V. Status The device has a single status pins which reports over temperature and/or over current faults. See the Functional Truth Table for all faults that are reported on this signal pin. This pin is an open drain structure and needs an external pull up resistor. For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 6 MC33486 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... DEVICE DESCRIPTION Overtemperature Protection The maximum peak temperature during the soldering process The DHSB incorporates over-temperature protection. Overshould not exceed 220°C (+5°C/-0°C). The time at maximum temperature detection occurs when an internal high side is in temperature should range from 10 to 40s max. the on state. When an over-temperature condition occurs, Thermal Management both outputs are affected. Both outputs are turned off to The junction to case thermal resistance is 2°C/W protect the DHSB from damage (Low sides ON). The maximum. The junction to ambient thermal resistance is overtemperature protection circuitry incorporates hysteresis. dependant on the mounting technology, and if an additional Overtemperature fault condition is reported on the status heat sink is used. One of the most commonly used mounting output. technique consists of using the printed circuit board and the copper lines as heat sink. High side overcurrent protection Figure 2 is an example of printed circuit board layout. It This device incorporates a current shutdown threshold of has a total of 10cm2 additional copper on two sides (2.5 cm2 35A typical. When this limit is reached due to an overload on the top side and 7.5 cm2 on the down side). condition or a short to ground, the faulty output is tri-stated. To Figure 3. .Printed Board Layout Example (not to scale) clear the fault the input (Inx) line needs to return low then on Top side pcb Bottom side pcb the next high transition the output will be enabled. 2 cm2 8 cm2 This information is reported on the status output. Low side block The low side block has control circuitry for two external NChannel power MOSFET’s. The low side control circuitry is PWM capable and protects the Low side MOSFETS in case of overcurrent (short to Vbat). This information is reported on the status output. The low side Gate controls are clamped at14V maximum to protect the gates of the Low Sides. During normal operation, the outputs OUT1 and OUT2 are driven by the high side. The low side Gate driver’s will only turn on when the Drain voltage (same connection as OUT1 or 2) of the internal high sides is less than 2V, which prevent any cross-conduction in the bridge. Low Side Overcurrent Protection Unlike the high side overcurrent circuitry, this overcurrent protection does not measure the current , but measures the effect of current on the low side through a condition : Vgs > 4.3V and Vds >2V. When this set of conditions occur for at least 8us (blanking time), both outputs OUT1 and OUT2 are tri-stated. The full bridge is tri-stated to prevent the motor for running in case of short to Vbat. As Vgs and Vds are measured in respect to the DHSB’s ground pin, it is essential that the low side source are connected to this same ground, in order to prevent false overcurrent detection due to ground shifts. Package The high side block is assembled into a power surface mount package. This package offers high thermal performances, and high current capabilities. It offers 10 pins on each package sides, and one additional connection which is the package heat sink (called pin 21). The heat sink acts as the device power Vbat connection. Soldering Information This device is packaged in a Surface Mount Power package indended to be soldered directly on the Printed Circuit Board. This device was qualified according to JEDEC standards JESD22-A113-B and J-STD-020A with the reflow conditions applicable for packages with thickness above 2.5mm : Convection 220°C +5/-0°C VPR 215-219°C IR / Convection 220°C +5/-0°C HSOP20 Thermal via from top to down side pcb external pcb (4x4 cm) With the above layout, thermal resistance junction to ambient of 25°C/W can be achieved. This value being splitted into : . junction to case : Rthjc = 2°C/W . case to ambient : Rthca = 23 °C/W. Lower value can be reached with the help of larger and thicker copper metal, higher number of thermal via from top to bottom side pcb and the use of additional thermal via from the circuit board to the module case. Thermal model The junction to ambient thermal resistance of the circuit mounted on a printed circuit board can be splitted into two main parts: junction to case and case to ambient resistances. A simplified steady state model is shown in figure 3 below. Figure 4. Simplified Thermal Model (Electrical Equivalent) Junction Temp Node (Volts represent Die Surface Temperature) Switch Power (W) (1.0A=1W of Power Dissipation) Rthjc Case Temp Node Rthca (1.0Ω=1°C/W) Ambient Temp Node (1.0V=1°C Ambient Temperature) For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 7 MC33486 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... The use of this model is similar to the electrical Ohm law (voltage = resistance X current), where: . Voltage represents temperature . Current represents power dissipated by the device . Resistance represents thermal resistance. We finally got : Temperature or delta temperature = Power Dissipation times Thermal resistance, that is : °C = W ° x C/W. Any node temperature can easily be calculated knowing the amount of power flowing through the thermal resistances. Example : 1. Numerical value. . Junction to case thermal resistance : 2°C/W (Rthjc) . Power into the switch : assuming the device is driving 8amps at 150°C junction temperature (Rdson at 150°C is 40mΩ) the total power dissipation is : 0.04*8*8 = 2.56W . Case to ambient thermal resistance (Rthca) : 20°C/W 2. Results. . Junction to case delta temp : 5°C (2.5W x 2°C/W) . Case delta temp from ambient : 50°C (20°C/W x 2.5W) . Actual junction temperature node will be : 50°C + 5°C = 55°C above the ambient temperature. Assuming an 85°C ambient temperature, the junction temperature is a t : 85 + 55 = 140°C. The above example take into account the junction to ambient thermal resistance, assuming that the ambient temp is 85°C. In the case where the device plus its printed circuit board are located inside a module, the ambient temp of the module should be taken into account. Or an additional thermal resistance from inside module to external ambient temperature must be added. The calculation method remains the same. The low side block is packaged into D2PAK or DPAK package. Thermal resistance junction to case is approx. 2°C/W. The junction to ambient thermal resistance follows the same rules as for the high side block, and is in the same range. For More Information On This Product, Go to: Dual High Side Switch forwww.freescale.com H-Bridge Automotive Applications 8 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Motorola reserves the right to make changes without further notice to any products herein. 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