MC74VHC1G132 2−Input NAND Schmitt−Trigger http://onsemi.com MARKING DIAGRAMS 5 5 M The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G132 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G132 to be used to interface 5 V circuits to 3 V circuits. The MC74VHC1G132 can be used to enhance noise immunity or to square up slowly changing waveforms. 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A 1 Features • • • • • • • VD M G G 5 High Speed: tPD = 3.6 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 68; Equivalent Gates = 16 Pb−Free Packages are Available VD M G G 5 1 TSOP−5/SOT−23/SC−59 DT SUFFIX CASE 483 VD M G 1 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. IN B 5 1 VCC PIN ASSIGNMENT 1 IN A GND 2 4 3 OUT Y IN B 2 IN A 3 GND 4 OUT Y 5 VCC Figure 1. Pinout (Top View) FUNCTION TABLE Inputs IN A IN B & OUT Y Figure 2. Logic Symbol Output A B Y L L H H L H L H H H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 18 1 Publication Order Number: MC74VHC1G132/D MC74VHC1G132 MAXIMUM RATINGS Symbol Parameter VCC DC Supply Voltage VIN DC Input Voltage Value Unit *0.5 to )7.0 V −0.5 to +7.0 V *0.5 to VCC )0.5 V IIK DC Input Diode Current −20 mA IOK DC Output Diode Current $20 mA IOUT DC Output Sink Current $12.5 mA ICC DC Supply Current per Supply Pin $25 mA *65 to )150 °C VOUT DC Output Voltage TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature Under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD Latchup Performance °C °C SC70−5/SC−88A (Note 1) TSOP−5 350 230 °C/W SC70−5/SC−88A TSOP−5 150 200 mW Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) u2000 u200 N/A V Above VCC and Below GND at 125°C (Note 5) $500 mA ESD Withstand Voltage ILATCHUP 260 )150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN DC Input Voltage 0.0 5.5 V DC Output Voltage 0.0 VCC V Operating Temperature Range VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 °C No Limit No Limit ns/V TJ = 80° C Time, Years )125 − − TJ = 90 ° C Time, Hours *55 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Junction Temperature °C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures TJ = 120° C Input Rise and Fall Time TJ = 130° C TA tr , tf TJ = 100° C VOUT 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74VHC1G132 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions TA ≤ 85°C TA = 25°C −55 ≤ TA ≤ 125°C VCC (V) Min Typ Max Min Max Min Max Unit VT+ Positive Threshold Voltage 3.0 4.5 5.5 1.50 2.35 2.80 1.88 2.66 3.21 2.25 3.10 3.70 1.50 2.35 2.80 2.25 3.10 3.70 1.50 2.35 2.80 2.25 3.10 3.70 V VT− Negative Threshold Voltage 3.0 4.5 5.5 0.65 1.10 1.45 1.03 1.62 2.02 1.40 2.10 2.60 0.65 1.10 1.45 1.40 2.10 2.60 0.65 1.10 1.45 1.40 2.10 2.60 V VH Hysteresis Voltage 3.0 4.5 5.5 0.30 0.40 0.50 0.85 1.05 1.20 1.60 2.00 2.25 0.30 0.40 0.50 1.60 2.00 2.25 0.30 0.40 0.50 1.60 2.00 2.25 V VIN = VCC or GND 2.0 1.9 2.0 1.9 1.9 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 3.0 4.5 2.9 4.4 2.9 4.5 IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 IOL = 4 mA IOL = 8 mA VOH VOL Minimum High−Level Output Voltage IOH = −50mA Maximum Low−Level Output Voltage 0.0 0.0 0.0 V V 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr/tf = 3.0 ns TA ≤ 85°C TA = 25°C Symbol tPLH, tPHL CIN Parameter Maximum Propagation Delay, A or B to Y Min −55 ≤ TA ≤ 125°C Typ Max Min Max Min Max Unit VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.6 6.1 11.9 15.4 1.0 1.0 14.0 17.5 1.0 1.0 16.1 19.6 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.6 4.3 7.7 9.7 1.0 1.0 9.0 11.0 1.0 1.0 10.3 12.3 5.5 10 Test Conditions Maximum Input Capacitance 10 10 pF Typical @ 25°C, VCC = 5.0 V CPD 11 Power Dissipation Capacitance (Note 6) pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1G132 VCC A or B 50% GND tPLH Y tPHL 50% VCC Figure 4. Switching Waveforms TEST POINT OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance Figure 5. Test Circuit ORDERING INFORMATION Device Package MC74VHC1G132DFT1 SC70−5/SC−88A/SOT−353 M74VHC1G132DFT1G SC70−5/SC−88A/SOT−353 (Pb−Free) MC74VHC1G132DFT2 SC70−5/SC−88A/SOT−353 M74VHC1G132DFT2G SC70−5/SC−88A/SOT−353 (Pb−Free) MC74VHC1G132DTT1 SOT23−5/TSOP−5SC59−5 M74VHC1G132DTT1G SOT23−5/TSOP−5SC59−5 (Pb−Free) Shipping † 3000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74VHC1G132 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 mm Ǔ ǒinches MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1G132 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE F NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 5 1 4 2 3 M B S K L DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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