IXYS MCC312-14IO1 Thyristor modules thyristor/diode module Datasheet

MCC 312
MCD 312
ITRMS = 2x 520 A
ITAVM = 2x 320 A
VRRM = 1200-1800 V
Thyristor Modules
Thyristor/Diode Modules
3
VRSM
VRRM
VDSM
VDRM
V
V
1300
1500
1700
1900
1200
1400
1600
1800
Type
2
76
5
4
1
MCC
MCC
MCC
MCC
312-12io1
312-14io1
312-16io1
312-18io1
Symbol
Test Conditions
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 85°C; 180° sine
ITSM, IFSM
TVJ = 45°C;
VR = 0
òi2dt
MCD
MCD
MCD
MCD
312-12io1
312-14io1
312-16io1
312-18io1
Maximum Ratings
520
320
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9200
10100
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
8000
8800
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
423 000
423 000
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
320 000
321 000
A2s
A2s
100
A/ms
3
6 7 1
5 4 2
3
1
5 4 2
MCC
MCD
Features
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
Keyed gate/cathode twin pins
●
●
●
(di/dt)cr
(dv/dt)cr
TVJ = TVJM
repetitive, IT = 960 A
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 1 A,
non repetitive, IT = ITAVM
diG/dt = 1 A/ms
●
●
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
TVJ = TVJM
IT = ITAVM
500
A/ms
1000
V/ms
tP = 30 ms
tP = 500 ms
PGAV
VRGM
W
W
W
V
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
°C
°C
°C
3000
3600
V~
V~
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Applications
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Solid state switches
●
●
120
60
20
10
PGM
●
t = 1 min
t=1s
●
●
●
Advantages
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
Weight
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-4
MCC 312
MCD 312
Symbol
Test Conditions
Characteristic Values
IRRM, IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 600 A; TVJ = 25°C
1.32
V
VT0
rT
For power-loss calculations only (TVJ = 140°C)
0.8
0.68
V
mW
VGT
VD = 6 V;
IGT
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
150
220
V
V
mA
mA
VGD
IGD
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.25
10
V
mA
IL
TVJ = 25°C; tP = 30 ms; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/ms
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
150
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/ms
2
ms
tq
TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ.
VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM
200
ms
QS
IRM
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms
760
275
mC
A
10
1: IGT, TVJ = 140°C
RthJC
RthJK
dS
dA
a
40
mA
V
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
3
6
2
5
1
1
4
4: PGM = 20 W
5: PGM = 60 W
IGD, TVJ = 140°C
0.1
10-3
10-2
6: PGM = 120 W
10-1
100
101 A
IG
102
Fig. 1 Gate trigger characteristics
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
other values
see Fig. 8/9
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
0.12
0.06
0.16
0.08
K/W
K/W
K/W
K/W
12.7 mm
9.6 mm
50 m/s2
100
TVJ = 25°C
µs
tgd
typ.
Limit
10
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7)
CSA class 5851, guide 460-1-1
1
0.01
MCC
© 2000 IXYS All rights reserved
A
1
10
Fig. 2 Gate trigger delay time
MCD
M8x20
0.1
IG
Dimensions in mm (1 mm = 0.0394")
M8x20
2-4
MCC 312
MCD 312
106
10000
ITSM
A
It
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
8000
600
A
VR = 0V
2
DC
180° sin
120°
60°
30°
ITAVM
500
I
2
As
FAVM
TVJ = 45°C
400
6000
TVJ = 140°C
105
300
4000
200
2000
100
104
0
0.001
0.01
s
0.1
1
0
1
ms
t
t
0.06
0.1
0.2
0.3
0.4
0.6
0.8
500
400
50
75
100
125 °C 150
Fig. 5 Power dissipation versus onstate current and ambient
temperature (per thyristor or
diode)
RthKA K/W
W
25
Fig. 4a Maximum forward current
at case temperature
600
Ptot
0
TC
Fig. 4 I2t versus time (1-10 ms)
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
10
300
DC
180° sin
120°
60°
30°
200
100
0
0
100
200
300
500 A 0
400
25
50
75
100
ITAVM / IFAVM
3000
Ptot
W
125
°C
TA
150
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
RthKA K/W
0.02
0.04
0.07
0.1
0.15
0.2
0.3
2500
2000
1500
Circuit
B6
3xMCC312 or
1000
3xMCD312
500
0
0
200
400
600
800 A
IdAVM
© 2000 IXYS All rights reserved
0
25
50
75
100
°C
125
150
TA
3-4
MCC 312
MCD 312
3000
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
W
RthKA K/W
2500
0.02
0.04
0.07
0.1
0.15
0.2
0.3
Ptot
2000
1500
Circuit
W3
3xMCC312 or
3xMCD312
1000
500
0
0
200
400
600
A
0
25
50
75
100
125 °C 150
TA
IRMS
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
0.20
K/W
0.15
d
ZthJC
DC
180°
120°
60°
30°
0.10
30°
60°
120°
180°
DC
0.05
RthJC (K/W)
0.120
0.128
0.135
0.153
0.185
Constants for ZthJC calculation:
i
0.00
10-3
10-2
10-1
100
101
s
102
t
1
2
3
4
ti (s)
0.0058
0.031
0.072
0.0112
0.00054
0.098
0.54
12
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
0.25
K/W
0.20
RthJK for various conduction angles d:
ZthJK
0.15
30°
60°
120°
180°
DC
0.10
0.05
10-2
10-1
100
s
101
t
© 2000 IXYS All rights reserved
d
RthJK (K/W)
DC
180°
120°
60°
30°
0.160
0.168
0.175
0.193
0.225
Constants for ZthJK calculation:
i
0.00
10-3
Rthi (K/W)
102
1
2
3
4
5
Rthi (K/W)
ti (s)
0.0058
0.031
0.072
0.0112
0.04
0.00054
0.098
0.54
12
12
4-4
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