Ordering number : ENN7011 MCH3408 N-Channel Silicon MOSFET MCH3408 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167A [MCH3408] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65 0.07 1.6 2.1 3 2.0 3 0.85 1 : Gate 2 : Source 3 : Drain Specifications 1 SANYO : MCPH3 2 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V ID 1.4 A 5.6 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Mounted on a ceramic board (900mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 30 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=700mA 1.2 RDS(on)1 RDS(on)2 ID=700mA, VGS=10V ID=400mA, VGS=4V IDSS IGSS 0.77 Marking : KH Unit max V 1 µA ±10 µA 2.6 1.1 V S 230 300 mΩ 400 560 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71801 TS IM TA-3227 No.7011-1/4 MCH3408 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 65 Output Capacitance 14 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 8 pF Turn-ON Delay Time td(on) See specified Test Circuit 5 ns Rise Time tr td(off) See specified Test Circuit 4 ns See specified Test Circuit 11 ns tf See specified Test Circuit 3 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 2.5 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A 0.6 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=1.4A, VGS=0 0.3 nC 0.87 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=700mA RL=21.4Ω VIN D VOUT PW=10µs D.C.≤1% G MCH3408 50Ω S ID -- VDS 25°C 7 25° 5°C C VDS=10V Ta= -- 1.2 1.0 VGS=3V 0.5 1.0 0.8 0.6 0.4 0 25 °C 0.2 C Drain Current, ID -- A 1.5 --25 ° 4V 75 °C V 10 8V Drain Current, ID -- A ID -- VGS 1.4 6V 5V 2.0 Ta = P.G 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 800 0.5 IT03294 4.0 IT03295 RDS(on) -- Ta 800 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 700 600 500 ID=0.4A 0.7A 400 300 200 100 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT03296 700 600 500 4V S= A, VG 0.4 I D= 400 300 .7A, I D=0 =10V VGS 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03297 No.7011-2/4 MCH3408 yfs -- ID VDS=10V 2 25 7 °C 75 = Ta 5 5°C --2 3 2 3 2 0.1 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.2 0.4 0.8 1.0 1.2 1.4 IT03299 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=10V 3 0.6 Diode Forward Voltage, VSD -- V IT03298 SW Time -- ID 5 f=1MHz Ciss 7 5 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1.0 7 5 Ta=75 °C 25°C --25°C °C 1.0 Drain Current, ID -- A td(off) 10 7 td(on) 5 tr 3 tf 3 2 Coss 10 Crss 7 2 5 1.0 3 5 7 2 0.1 3 5 7 2 1.0 Drain Current, ID -- A 3 0 10 7 5 3 2 Drain Current, ID -- A 8 6 4 2 0.5 1.0 1.5 2.0 Total Gate Charge, Qg -- nC 2.5 IT03302 PD -- Ta 1.0 15 20 25 30 IT03301 ASO IDP=5.6A <10µs 10 1m s 10 ID=1.4A DC 0µ s ms 10 1.0 7 5 0m s op era tio 3 2 n Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0 10 Drain-to-Source Voltage, VDS -- V VDS=10V ID=1.4A 0 5 IT03300 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V VGS=0 3 2 0.1 0.01 Allowable Power Dissipation, PD -- W IF -- VSD 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT03303 M 0.8 ou nt ed on ac er 0.6 am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m m 0.2 ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03304 No.7011-3/4 MCH3408 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.7011-4/4