Ordering number : ENN7285 MCH3411 N-Channel Silicon MOSFET MCH3411 Ultrahigh-Speed Switching Applications Preliminary Features • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2167A [MCH3411] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65 0.07 1.6 2.1 3 2.0 3 (Bottom view) 0.85 1 : Gate 2 : Source 3 : Drain 1 Specifications 2 (Top view) SANYO : MCPH3 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±10 V 3 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% V 12 A 1 W Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 30 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=1.5A 0.4 RDS(on)1 RDS(on)2 ID=1.5A, VGS=4V ID=1A, VGS=2.5V 3.5 Marking : KL Unit max V 1 µA ±10 µA 1.3 V 69 90 mΩ 84 118 mΩ 5.0 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002 TS IM TA-100052 No.7285-1/4 MCH3411 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 270 Output Capacitance 38 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 23 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 30 ns See specified Test Circuit. 42 ns tf See specified Test Circuit. 52 ns Qg VDS=10V, VGS=4V, ID=3A 3.7 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.7 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.5 Diode Forward Voltage VSD IS=3A, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge nC 0.86 1.2 V Switching Time Test Circuit VDD=15V VIN 4V 0V ID=1.5A RL=10Ω VIN D VOUT PW=10µs D.C.≤1% G MCH3411 50Ω V 1.0 2 25°C 1 0.5 VGS=1.0V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 200 150 1.5A ID=1.0A 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 12 IT04634 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 IT04633 RDS(on) -- Ta 150 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 0.50 Gate-to-Source Voltage, VGS -- V Ta=25°C 100 0.25 IT04632 RDS(on) -- VGS 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3 5°C --25° C 1.5 VDS=10V Ta= 7 Drain Current, ID -- A 2.0 Ta= -- 1.5 2.5V 2.0V 4 4.5V .0V 4 10.0V 2.5 ID -- VGS 5 25°C 75°C ID -- VDS 3.0 Drain Current, ID -- A S 25°C P.G 125 2.5V S= VG , 1.0A 4.0V I D= S= A, VG 5 . 1 I D= 100 75 50 25 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 IT04635 No.7285-2/4 yfs -- ID 25 1.0 7 5 = Ta C 5° °C 75 --2 3 2 0.1 7 5 3 2 0.01 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 70.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 0 VDD=15V VGS=4V 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V f=1MHz 7 td(off) 5 3 1.2 IT04637 Ciss, Coss, Crss -- VDS 1000 5 Ciss, Coss, Crss -- pF 7 0.2 IT04636 SW Time -- ID 100 tf 2 tr Switching Time, SW Time -- ns VGS=0 5° 25° C --25 C °C °C 3 2 IF -- VSD 10 7 5 3 2 VDS=10V Ta= 7 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S MCH3411 td(on) 10 7 Ciss 3 2 100 7 5 Coss 3 5 Crss 2 3 2 10 7 2 0.1 3 5 7 2 1.0 3 Drain Current, ID -- A 3 2 10 7 5 Drain Current, ID -- A 4 3 2 1 3 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC 4.0 IT04640 PD -- Ta 1.2 1.0 10 15 20 25 30 IT04639 ASO IDP=12A <10µs 10 0µ s 1m s ID=3A 10 1.0 7 5 DC ms 10 0m op s era 3 2 tio Operation in this area is limited by RDS(on). n 0.1 7 5 3 2 0 5 Drain-to-Source Voltage, VDS -- V VDS=10V ID=3A 0 Allowable Power Dissipation, PD -- W 0 IT04638 VGS -- Qg 5 Gate-to-Source Voltage, VGS -- V 5 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT04641 M ou nt 0.8 ed on ac er am ic 0.6 bo ar 0.4 d( 90 0m m2 ✕ 0.8 m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04642 No.7285-3/4 MCH3411 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.7285-4/4