MCH3459 Ordering number : ENN8110 MCH3459 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V ID 1.8 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 7.2 A Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 Ratings min typ Unit max 30 V 1 µA ±10 µA VGS(off) yfs VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A RDS(on)1 RDS(on)2 ID=1A, VGS=10V ID=0.5A, VGS=4V Input Capacitance Ciss pF Coss 22 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 95 Output Capacitance 16 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 6.2 ns See specified Test Circuit. 4.5 ns td(off) tf See specified Test Circuit. 13 ns See specified Test Circuit. 6.4 ns Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time 1.2 0.78 Marking : LL 2.6 1.3 V S 150 195 mΩ 290 410 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004PE TS IM TB-00000650 No.8110-1/4 MCH3459 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.8A 3.2 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.8A 0.74 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.8A 0.42 Diode Forward Voltage VSD IS=1.8A, VGS=0 0.93 Package Dimensions unit : mm 2167A VDD=15V VIN 0.25 10V 0V 0.15 3 ID=1A RL=15Ω VOUT 1.6 D 0.25 1 PW=10µs D.C.≤1% 0.07 2.1 VIN 2 V Switching Time Test Circuit 0.3 0.65 nC 1.2 G 2.0 3 0.85 Ta= --25 °C 75° C V 1.8 4.0 1.6 Drain Current, ID -- A 1.2 1.0 0.8 3.0V 0.6 0.4 1.4 1.2 1.0 0.8 0.6 C V 3.5 25° 0.4 VGS=2.5V 0.2 0.2 Ta= 75° C --25° C V V 6.0 10.0 ID -- VGS 2.0 VDS=10V 1.4 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 400 1.0A ID=0.5A 200 100 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 1.5 20 IT07281 2.0 2.5 3.0 3.5 4.0 4.5 IT07279 RDS(on) -- Ta 500 600 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 300 0.5 IT07277 RDS(on) -- VGS 700 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ MCH3459 SANYO : MCPH3 ID -- VDS 1.6 S 2 (Top view) 1.8 50Ω C 1 Drain Current, ID -- A P.G 1 : Gate 2 : Source 3 : Drain 25° (Bottom view) 450 400 4V S= 350 , VG 0.5A I D= 300 250 =10V , VGS 200 .0A I D=1 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT07283 No.8110-2/4 MCH3459 yfs -- ID VGS=0 3 3 2 =- 5 Ta 5°C 7 3 2 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.4 5 0.5 0.6 0.9 1.0 1.1 1.2 IT07287 f=1MHz 2 100 Ciss, Coss, Crss -- pF 7 5 3 td(off) 2 10 tf td(on) 7 5 tr 3 Ciss 100 7 5 3 Coss 2 Crss 2 1.0 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 8 7 3 2 Drain Current, ID -- A 6 5 4 1 3 2 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge, Qg -- nC 3.5 IT07293 PD -- Ta 1.0 0.8 25 30 IT07291 <10µs 10 ID=1.8A DC 10 0m er 0µ s 1m m 10 op s s s ati on 3 2 2 0 20 IDP=7.2A 1.0 7 5 0.1 7 5 3 15 ASO 2 10 7 5 0 10 Drain-to-Source Voltage, VDS -- V IT07289 VDS=10V ID=1.8A 9 5 0 7 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 0.8 Ciss, Coss, Crss -- VDS 3 VDD=15V VGS=10V 2 0.7 Diode Forward Voltage, VSD -- V IT07285 SW Time -- ID 3 Allowable Power Dissipation, PD -- W °C °C 25 --25 7 °C 25° C 25 1.0 1.0 7 5 Ta= 75° C 2 0.1 0.01 Switching Time, SW Time -- ns IF -- VSD 5 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 5 (T a= 25 Operation in this area is limited by RDS(on). °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT08250 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08251 No.8110-3/4 MCH3459 Note on usage : Since the MCH3459 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8110-4/4